smd type features low v ce(sat) compliments to 2sd1664 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v collector current (dc) -1 a single pulse, p w =100ms -2 a collector power dissipation p c *0.5 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on a 40x40x0.7mm ceramic board. i c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = -20v , i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a collector-base breakdown voltage v (br)cbo i c = -50ua , i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e = -50ua -5 dc current gain h fe v ce =-3v,i c = -0.1a 82 390 transition frequency f t v ce =-5v,i e = 50ma , f = 30mhz 150 mhz collector output capacitance c ob v cb = -10v , i e =0,f=1mhz 20 30 pf h fe classification marking rank p q r h fe 82 180 120 270 180 390 ba sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SB1132 product specification 4008-318-123
smd type electrical characteristics curves sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SB1132 product specification 4008-318-123
smd type transistors 2SB1132 sales@twtysemi.com http://www.twtysemi.com 3 of 3 product specification 4008-318-123
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