srf446 SRF447 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail sales@semelab.co.uk website http://www.semelab.co.uk prelim. 5/98 device srf446 gate source drain SRF447 drain source gate v dss v dgo i d v gs p d t j , t stg t l 1 3 2 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) bsc 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) bsc 2.87 (0.113) 3.12 (0.123) to-247ad package outline. dimensions in mm (inches) drain C source voltage drain C gate voltage continuous drain current gate C source voltage total power dissipation @ t case = 25c operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. nCchannel enhancement mode 250w C 250v C 65mhz 900 900 6.5 30 230 -55 to150 300 v a v w c absolute maximum ratings (t case = 25c unless otherwise stated) rf power mosfet features ? low cost common source rf package. ? very high breakdown for improved ruggedness. ? low thermal resistance. ? nitride passivated die for improved reliability. pin no 1 2 3 dimensions in millimeters and (inches) note: the srf446 and SRF447 comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair.
characteristic test conditions min. typ. max. unit characteristic test conditions min. typ. max. unit srf446 SRF447 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail sales@semelab.co.uk website http://www.semelab.co.uk prelim. 5/98 20 80 db % no degradation in output power 1500 1800 70 130 27 50 c iss c oss c rss characteristic min. typ. max. unit 0.55 r q jc junction to case c/w thermal characteristics 1) pulse test: pulse width < 380 m s , duty cycle < 2% input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 300v f = 1mhz pf caution electrostatic sensitive devices. anti-static procedures must be followed. characteristic test conditions min. typ. max. unit bv dss i dss i gss v gs(th) g fs v ds(on) v gs = 0v , i d = 250 m a v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 50ma v ds = 25v, i d = 3.5a i d(on) = 3.5a v gs = 10v drain C source breakdown voltage zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage forward transconductance on state drain voltage 1 900 25 250 100 25 4 5.7 7 v m a na v s v static electrical ratings (t case = 25c unless otherwise stated) dynamic characteristics functional characteristics g ps h y g ps h y common source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 common source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 f = 27.12mhz v gs = 0v v dd = 300v p out = 250w f = 40.68mhz v gs = 0v v dd = 250v p out = 250w 15 75 db % no degradation in output power
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