2006. 6. 30 1/4 semiconductor technical data ktc5707d/l epitaxial planar npn transistor revision no : 2 dc-dc converters relay drivers, lamp drivers, motor drivers, strobes application. features adoption of fbet, mbit processes. high current capacitance. low collector-to-emitter saturation voltage. high-speed switching. high allowable power dissipation. maximum rating (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ces 80 v v ceo 50 emitter-base voltage v ebo 6 v collector current dc i c 8 a pulse i cp 11 base current i b 2 a collector power dissipation ta=25 p c 1.0 w tc=25 15 junction temperature t j 150 storage temperature range t stg -55 150 dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2006. 6. 30 2/4 ktc5707d/l revision no : 2 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 80 - - v collector-emitter breakdown voltage v (br)ces i c =100 a, v be =0 80 - - v v (br)ceo i c =1ma, i b =0 50 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 - - v collector-emitter saturation voltage v ce(sat)1 i c =2a, i b =40ma - 110 170 mv v ce(sat)2 i c =3.5a, i b =175ma - 160 240 mv base-emitter saturation voltage v be(sat) i c =2a, i b =40ma - 0.83 1.2 v dc current gain h fe v ce =2v, i c =500ma 200 - 560 - transition frequency f t v ce =10v, i c =500ma - 330 - mhz collector output capacitance c ob v cb =10v, f=1mhz - 28 - pf switching time turn-on time t on i b1 b2 i input output 50 ? 100 f pw=20 s dc 1% 470 f r v b r be v =-5v cc v =25v 20i =-20i =i =2.5a b1 b2 c < = r l - 30 - ns storage time t stg - 420 - fall time t f - 25 -
2006. 6. 30 3/4 ktc5707d/l revision no : 2 fe h - i collector current i c (a) dc current gain h c fe 0.1 10 0.01 1.0 10 100 1000 base-emitter saturation voltage v be(sat) (v) collector current i c (a) 0.1 v be(sat) -i c collector- emitter voltage, v ce (v) collector current i c (a) 0 i - v cce 0.8 0.4 2.0 1.6 1.2 cb collector-base voltage v (v) c ob -v cb 1 0.1 1.0 10 f=1mhz 100 500 10 collector output capacitance c ob (pf) collector current i c (a) 0.01 0.1 1.0 v ce(sat) - i c 110 0.01 0.1 1 1.0 10 10 10 100 1000 i c - v be base-emitter voltage v be (v) 0 collector current i c (a) 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 2 3 8 4 5 6 7 0 1 2 3 4 5 6 7 i b = 0ma 10ma 100ma 60ma 20ma 30ma 40ma 80ma 90ma 70ma 50ma collector- emitter saturation voltage v ce (sat) (mv) ta=75 c ta=75 c -25 c 25 c -25 c 25 c ta=75 c 25 c -25 c ta=75 c -25 c i c /i b = 50 i c /i b = 20 v ce =2v v ce =2v 25 c
2006. 6. 30 4/4 ktc5707d/l revision no : 2 collector power dissipation p c (w) 0 0 ambient temperature ta ( c) c p - ta safe operating area collector-emitter voltage v ce (v) 0.01 collector current i c (a) 0.1 1 10 0.1 1 10 100 20 40 60 80 160 100 120 140 0.2 0.4 0.6 0.8 1.0 collector power dissipation p c (w) 0 0 p c - t c 25 50 75 100 125 150 2 4 6 8 10 18 12 14 16 15 case temperature t c ( c) collector-emitter saturation voltage v ce(sat) (mv) collector current i c (a) collector current i c (a) v - i c ce(sat) 0.1 0.01 10 110 10000 1000 100 i c /i b = 50 transition frequency f t (mhz) 0.01 0.1 f t - i c 110 100 10 1000 v ce = 10v dc operati on ( ) ta=25 c dc operation ( ) tc=25 c ta=75 c 25 c -25 c 25 c single nonrepetitive pulse t c = curves must be derated linearly with increase i cp =11a i c =8a 10 ms 100 s 1 ms 100 ms no heat sin k 500 s
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