FJX992 ? pnp audio freque ncy low noise amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com FJX992 rev. a0 1 august 2010 FJX992 pnp audio frequency low noise amplifier features ? high voltage : v ceo = -120v ? excellent h fe linearity ? high h fe : h fe = 200~700 absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be cons ulted on applicati ons involving pulsed or low duty cycle operations. thermal characteristics t a = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage -120 v v cbo collector-base voltage -120 v v ebo emitter-base voltage -5 v i c collector current -100 ma t j , t stg junction and storage temperature range -55 to +150 c symbol parameter max. units p d total device dissipation derate above t a = 25c 235 1.88 mw mw/c r ja thermal resistance, junction to ambient 530 c/w 1. base 2. emitter 3. collector 1 2 sot-323 3
FJX992 ? pnp audio freque ncy low noise amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com FJX992 rev. a0 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter test cond ition min. typ. max. units off characteristics v (br)ceo collector-emitter breakdown voltage* i c =-1ma, i b =0 -120 v v (br)cbo collector-base breakdown voltage i c =-100 a, i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-10 a, i c =0 -5 v i cbo collector-base cutoff current v cb =-120v, i e =0 -100 na i ebo emitter-base cutoff current v eb =-5v, i c =0 -100 na on characteristics h fe dc current gain* v ce =-6v, i c =-0.1ma v ce =-6v, i c =-2ma 150 200 700 v ce (sat) collector-emitter saturation voltage i c =-10ma, i b =-1ma -0.3 v v be (on) base-emitter on voltage v ce =-6v, i c =-1ma -0.65 v small signal characteristics f t current gain - bandwidth product v ce =-6v, i c =-1ma 100 mhz c obo output capacitance v cb =-10v, i e =0, f=1mhz 4 pf
FJX992 ? pnp audio freque ncy low noise amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com FJX992 rev. a0 3 typical performan ce characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage figure 3. base-emitter saturation voltag e figure 4. base-emitter on voltage figure 5. collector-emitter cutoff current figure 6. base-emitter cutoff current 0.1 1 10 100 10 100 1000 t j = 100 o c v ce = 6v h fe , dc current gain i c [ma], collector current t a = 125 o c t j = 75 o c t j = 25 o c 0.1 1 10 100 0.01 0.1 1 v ce (sat),[v] saturation voltage i c [ma], collector current i c = 10 i b t j = 125 o c t j = 75 o c t j = 25 o c t j = 100 o c 0.1 1 10 100 0.1 1 i c = 10 i b v be (sat)[v], saturation voltage i c [ma], collector current t j = 125 o c t j = 75 o c t j = 25 o c t j = 100 o c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 v ce = 6v i c [ma], collector current v be (on) [v], base-emitter on voltage t j = 125 o c t j = 75 o c t j = 25 o c t j = 100 o c 10 100 0.01 0.1 1 10 100 i cbo [na], collector-base cutoff current v cb [v], collector-base voltage t j = 125 o c t j = 75 o c t j = 25 o c t j = 100 o c 12345 0.1 1 10 100 1000 10000 i ebo [pa], emitter-base cutoff current v eb [v], emitter-base voltage t j = 125 o c t j = 75 o c t j = 25 o c t j = 100 o c
FJX992 ? pnp audio freque ncy low noise amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com FJX992 rev. a0 4 typical performan ce characteristics (continued) figure 7. collector output capacitance figure 8. collector input capacitance figure 9. forward bias safe operating area figure 10. transient thermal resistance 12345678910 1 2 3 4 5 6 7 8 9 10 c ob [pf], output capacitance v cb [v], collector-base voltage f = 1mhz 12345 1 10 100 c ib [pf], input capacitance v eb [v], collector-base voltage f = 1mhz 0.1 1 10 100 0.1 1 10 100 icmax fbsoa vceo(max) collector current, i c [ma] collector-emitter voltage, v ce [v] 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 50% r(t), normalized transient thermal resistance t1, time(sec) single pulse 30% 10% 5% 2% d=1% rthja(t)=r(t)*rthja rthja=530c/w
FJX992 ? pnp audio freque ncy low noise amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com FJX992 rev. a0 5 physical dimensions sot-323 2.000.20 0.950.15 0.90 0.10 3 3 0.135 1.250.10 2.100.10 0.10 min. 0.2750.100 1.300.10 +0.04 ?0.01 1.000.10 0.05 +0.05 ?0.02 dimensions in millimeters
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