tsop52.. document number 82154 rev. 1.2, 05-jul-05 vishay semiconductors www.vishay.com 1 16797 1 2 3 4 n ot for new de si gn ir receiver module for pcm remote control systems description the tsop52.. - series are miniaturized smd-ir receiver modules for infr ared remote control sys- tems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir fil- ter. the demodulated output signal can directly be decoded by a microprocessor. tsop52.. is the stan- dard ir remote control smd-receiver series, sup- porting all major transmission codes. features ? photo detector and preamplifier in one package internal filter for pcm frequency continuous data transmission possible ttl and cmos compatibility output active low low power consumption high immunity against ambient light suitable burst length 10 cycles/burst taping available for topview and sideview assem- bly lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec parts table absolute maximum ratings absolute maximum ratings t amb = 25 c, unless otherwise specified part carrier frequency tsop5230 30 khz tsop5233 33 khz tsop5236 36 khz tsop5237 36.7 khz tsop5238 38 khz tsop5240 40 khz TSOP5256 56 khz parameter test condition symbol value unit supply voltage pin 4 v s -0.3...6.0 v supply current pin 4 i s 5ma output voltage pin 3 v o -0.3...6.0 v output current pin 3 i o 15 ma junction temperature t j 100 c storage temperature range t stg -40...+85 c operating temperature range t amb -25...+85 c power consumption t amb 85c p tot 50 mw e3
www.vishay.com 2 document number 82154 rev. 1.2, 05-jul-05 tsop52.. vishay semiconductors n ot f or n ew d e si gn electrical and opti cal characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit supply current v s = 5 v, e v = 0 i sd 0.8 1.1 1.5 ma v s = 5 v, e v = 40 klx, sunlight i sh 1.4 ma supply voltage v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.7, ir diode tsal6200, i f = 400 ma d30m parameter test condition symbol min ty p. max unit output voltage low (pin 3) i osl = 0.5 ma,e e = 0.7 mw/m 2 v osl 250 mv minimum irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.7 e e min 0.35 0.5 mw/m 2 minimum irradiance (56 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.7 e e min 0.4 0.6 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 50 deg figure 1. frequency dependence of responsivity e / e C rel. responsivity e min e 0.7 0.8 0.9 1.0 1.1 f/f 0 C relative frequency 1.3 94 8143 0.0 0.2 0.4 0.6 0.8 1.0 1.2 f=f 0 5% f(3db)=f 0 /10 ? 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.0 10000.0 e e ? irradiance ( mw/m 2 ) 96 12110 po t ? output pulse length (ms) input burst duration = 950 nm, optical test signal, fig.7
tsop52.. document number 82154 rev. 1.2, 05-jul-05 vishay semiconductors www.vishay.com 3 n ot for new de si gn figure 3. sensitivity in bright ambient figure 4. threshold irradiance vs. field strength of disturbance figure 5. sensitivity vs. supply voltage disturbances 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0.10 1.00 10.00 100.00 e C dc irradiance (w/m 2 ) 96 12111 e min e Cthreshold irradiance (mw/m ) 2 correlationwith ambient light sources (disturbance effect): 10w/m 2 ? 1.4 klx (stand.illum.a, t = 2855 k) ? 8.2 klx (daylight,t= 5900k) ambient, = 950 nm 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 e ? field strength of disturbance (kv/m) 16802 e min e ? threshold irradiance (mw/m ) 2 0.01 0.1 1 10 100 0.1 1 10 1000 94 9106 ? v srms C ac voltage on dc supply voltage (mv) e Cthreshold irradiance( mw/m ) e min 2 f=f 0 10 khz 100 hz 1 khz figure 6. sensitivity vs. ambient temperature figure 7. output function figure 8. output function 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 C30C150 153045607590 t amb C ambient temperature (c ) 96 12112 e min e C threshold irradiance (mw/m ) 2 sensitivity in dark ambient e e t t pi * t * t pi 10/fo is recommended for optimal function v o v oh v ol t 16110 optical test signal (ir diode tsal6200, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms) output signal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi C5/f 0 < t po < t pi +6/f 0 e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 )
www.vishay.com 4 document number 82154 rev. 1.2, 05-jul-05 tsop52.. vishay semiconductors n ot f or n ew d e si gn suitable data format the circuit of the tsop52.. is designed in that way that unexpected output pulses due to noise or distur- bance signals are avoided. a bandpass filter, an inte- grator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal should fu llfill the following condition: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38khz). burst length should be 10 cycles/burst or longer. after each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is neccessary. for each burst which is longer than 1.8ms a corre- sponding gap time is necess ary at some time in the data stream. this gap time should be at least 4 times longer than the burst. up to 800 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, r-2000 code. when a disturbance signal is applied to the tsop52.. it can still receive the data signal. however the sensi- tivity is reduced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the tsop52.. are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38khz or at any other fre- quency figure 9. max. envelope duty cycle vs. burstlength figure 10. output pulse diagram figure 11. relative spectral sensitivity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 20 30 40 50 60 70 80 90 burstlength [number of cycles/burst] 16156 envelope duty cycle f=38khz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.0 10000.0 e e ? irradiance (mw/m 2 ) 96 12114 on off t ,t ? output pulse length (ms) t on = 950 nm, optical test signal, fig.8 t off 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) C relative spectral sensitivity rel C wavelength ( nm ) 1150 94 8408 1.0 figure 12. directivity 16801 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 3 0 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel - relative t ransmissi o n d istance
tsop52.. document number 82154 rev. 1.2, 05-jul-05 vishay semiconductors www.vishay.com 5 n ot for new de si gn signals from fluorescent lamps with electronic bal- last with high or low modulation ( see figure a or fig- ure b ). figure 13. ir signal from fluores cent lamp with low modulation figure 14. ir signal from fluores cent lamp with high modulation 0 5 10 15 20 time [ms] 16739 0 5 10 15 20 time [s] 16740
www.vishay.com 6 document number 82154 rev. 1.2, 05-jul-05 tsop52.. vishay semiconductors n ot f or n ew d e si gn 16584
tsop52.. document number 82154 rev. 1.2, 05-jul-05 vishay semiconductors www.vishay.com 7 n ot for new de si gn 16585
www.vishay.com 8 document number 82154 rev. 1.2, 05-jul-05 tsop52.. vishay semiconductors n ot f or n ew d e si gn package dimensions in mm 16776
tsop52.. document number 82154 rev. 1.2, 05-jul-05 vishay semiconductors www.vishay.com 9 n ot for new de si gn ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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