c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 www. ruichips .com ru 30 p 5 d p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage - 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c - 3.1 a mounted on large heat sink i d p 300 s pulse drain current tested t a =25 c - 22 a t a =25 c - 5 .5 i d continuous drain current t a = 7 0 c - 4.5 a t a =25 c 2.5 p d maximum power dissipation t a = 7 0 c 1.6 w r q j a thermal resistance - junction to ambient 50 c /w ? - 30 v/ - 5. 5 a, r ds ( on ) = 38 m w (typ. ) @ v gs = - 10v r ds ( on ) = 55 m w (typ. ) @ v gs = - 4.5 v ? super high dense cell design ? reliable and rugged ? lead free and green available ? p ower management . absolute maximum ratings p - channel mosfe t sot - 223
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 2 www. ruichips .com ru 30 p 5 d electrical characteristics ( t a =25 c unless otherwise noted) r u30 p 5 d symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds = - 250 m a - 30 v v ds = - 30 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1 - 1.8 - 2. 5 v i gss gate leakage current v gs = 2 0 v, v ds =0v 1 0 0 n a v gs = - 10 v, i ds = - 5.2 a 38 50 m w r ds ( on ) drain - source on - state resistance v gs = - 4.5 v, i ds = - 2 a 55 90 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . the value in any given application depends on the user's specific board design. puls e test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = - 2 a, v gs =0v - 1 v t rr reverse recovery time 12 ns q rr reverse recovery charge i sd = - 5.5 a, dl sd /dt=100a/ m s 7 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 1 w c iss input capacitance 55 0 c oss output capacitance 9 0 c rss reverse transfer capacitance v gs =0v, v ds = - 15 v, frequency=1.0mhz 5 0 pf t d ( on ) turn - o n delay time 8 t r turn - on rise time 10 t d ( off ) turn - off delay time 28 t f turn - off fall time v dd = - 15 v, r l = 2.7 w , i ds = - 5.5 a, v gen = - 10v, r g = 6 w 1 0 ns gate charge characteristics q g total gate charge 11 14 q gs gate - source charge 2 q gd gate - drain charge v ds = - 24 v, v gs = - 10 v, i ds = - 5.5 a 3 nc
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 3 www. ruichips .com ru 30 p 5 d typical characteristics power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 4 www. ruichips .com ru 30 p 5 d typical characteristics output characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v g s - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 5 www. ruichips .com ru 30 p 5 d typical characteristics drain - source on resistance source - drain diode forward normalized on resistance - i s - source current (a) t j - junction tem perature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v gs - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 6 www. ruichips .com ru 30 p 5 d avalanche test circ uit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 7 www. ruichips .com ru 30 p 5 d ordering and marking information ru 30 p 5 package (available) d : so t - 223 operating temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 8 www. ruichips .com ru 30 p 5 d package information so t - 2 23 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.520 1.800 0.060 0.071 e 3.300 3.700 0.130 0.146 a1 0.000 0.100 0.000 0.004 e1 6.830 7.070 0.269 0.278 a2 1.500 1.700 0.059 0.067 e 2.300(bsc) 0.091(bsc) b 0.660 0.820 0.026 0.032 e1 4.500 4.700 0.177 0.185 c 0.250 0.350 0.010 0.014 l 0.900 1.150 0.035 0.045 d 6.200 6.400 0.244 0.252 0 10 0 10 d1 2.900 3.100 0.114 0.122
c opyright ruichips semiconductor co . , ltd rev . a C aug ., 2011 9 www. ruichips .com ru 30 p 5 d customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com inves tor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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