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specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 1 - P0120003P 800mw gaas power fet (pb - free type) technical note features up to 2.7 ghz frequency band beyond +27 dbm output power up to +43dbm output ip3 high drain efficiency 12db gain at 2.1ghz sot - 89 smt package low noise figure applications wireless communication system cellular , pcs, phs, w - cdma , wlan description P0120003P is a high performance gaas mesfet housed in a low - cost sot - 89 package. our originally developed "pulse - doped" channel structure has realized low distortion, which leads to high ip3. the channel structure also achieved an extre mely low noise figure. the details about pulse - doped fet channel are described in our products catalog. utilization of ausn die attach has realized a low and stable thermal resistance . the lead frame is plated with sn - bi to make the device pb - free. eudyna ? s long history of manufacturing has cultivated high device reliability. the estimated mttf of the fet is longer than 15years at tj of 150 c. you can see the details in re liability and quality assurance. functional diagram pin no. function 1 input/gate 2, 4 ground 3 output/drain ordering information part no description number of devices container P0120003P gaas power fet 1000 7 ? reel kp023j 2.11 - 2.17ghz application circuit 1 anti - static bag absolute maximum ratings (@tc=25 c) parameter symbol val ue units drain - source voltage vds 8 v gate - source voltage vgs - 4 v drain current ids idss --- rf input power (continuous) pin 20 (*) dbm power dissipation pt 2.2 w junction temperature tj 125 c storage temperature tstg - 40 to +125 c tc: case te mperature. operating the device beyond any of these values may cause permanent damage. (*) measured at 2.1ghz with our test fixture matched to oip3. electrical specifications (@tc=25 c) values parameter symbol test conditions min. typ. max. units saturated drain current idss vds=3v, vg=0v --- --- 850 ma transconductance gm vds=6v, ids=300ma 250 --- --- ms pinchoff voltage vp vds=6v, ids=30ma - 3.0 --- - 1.7 v gate - source breakdown voltage |vgs0| igso= - 30 m a 3.0 --- --- v d c thermal resistan ce rth channel - case --- --- 45 c/w frequency f 2.7 ghz output power @ 1db gain compression p1db 29 --- dbm small signal gain g 12 --- db output ip3 oip3 --- 43 --- dbm rf power added efficiency ? add vds=6v ids=220ma f=2.1ghz --- 56 --- % 4 1 2 3 4 1 2 3
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 2 - P0120003P 800mw gaas power fet (pb - free type) technical note typical characteristics load - pull characteristics (typical data) tc=25 c, vds=6v, ids=220ma, common source, zo=50 w (calibrated to device leads) 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 s11 s22 1.2 ghz 1.2 ghz 2.4 ghz 2.4 ghz 0 45 90 135 - 180 - 135 - 90 - 45 0 45 90 135 - 180 - 135 - 90 - 45 s12 s21 1.2 ghz 1.2 ghz 2.4 ghz 2.4 ghz 2.0 6.0 4.0 0 0.02 0.04 0.06 0 scale for |s12| scale for |s21| total power dissipation(w) tc ( c ) 3 4 2 1 0 0 50 100 150 200 vgs =0v - 2.0 v - 1.5 v - 1.0 v - 0.5 v drain current( ma ) vds (v) 1000 50 100 150 200 vgs =0v - 2.0 v - 1.5 v - 1.0 v - 0.5 v drain current( ma ) vds (v) 1000 750 500 250 0 750 500 250 0 0 2 4 6 8 transfer curve power derating curve
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 3 - P0120003P 800mw gaas power fet (pb - free type) technical note tc=25 c, vds=6v, ids=180ma, common source, zo=50 w (calibrated to device leads) [note] you can download the s - parameter list from our web site: www.eudyna.com ids=220ma freq (ghz) s11 mag s11 ang s21 mag s21 ang s12 mag s12 ang s22 mag s22 ang 1.2 0.760 -161.1 5.548 77.6 0.049 36.8 0.204 -160.1 1.4 0.756 -172.5 4.827 69.3 0.052 34.4 0.212 -166.9 1.6 0.754 178.0 4.263 61.7 0.056 32.3 0.219 -172.7 1.8 0.754 169.6 3.812 54.6 0.060 30.0 0.225 -178.1 2.0 0.755 162.0 3.454 47.9 0.063 27.7 0.229 176.5 2.2 0.755 154.9 3.163 41.3 0.067 25.2 0.233 171.2 2.4 0.754 148.0 2.925 34.8 0.072 22.4 0.238 164.9 ids=180ma freq (ghz) s11 mag s11 ang s21 mag s21 ang s12 mag s12 ang s22 mag s22 ang 1.2 0.758 -161.1 5.539 77.7 0.051 35.5 0.215 -161.3 1.4 0.754 -172.5 4.820 69.3 0.054 33.1 0.223 -168.2 1.6 0.753 178.0 4.256 61.8 0.057 30.9 0.229 -174.0 1.8 0.753 169.6 3.805 54.7 0.061 28.6 0.235 -179.5 2.0 0.753 162.0 3.449 48.0 0.065 26.3 0.239 175.0 2.2 0.753 154.9 3.158 41.4 0.069 23.8 0.243 169.6 2.4 0.752 148.0 2.920 34.9 0.073 21.0 0.248 163.4 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 s11 s22 1.2 ghz 1.2 ghz 2.4 ghz 2.4 ghz 0 45 90 135 - 180 - 135 - 90 - 45 0 45 90 135 - 180 - 135 - 90 - 45 s12 s21 1.2 ghz 1.2 ghz 2.4 ghz 2.4 ghz 2.0 6.0 4.0 0 0.02 0.04 0.06 0 scale for |s12| scale for |s21|
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 4 - P0120003P 800mw gaas power fet (pb - free type) technical note [note] p out and h add are measured by one signal. the data for the figures above were measured with the loa d impedance matched to ip3. ids=220ma ids=180ma - 100 - 80 - 60 - 40 - 20 0 20 40 60 80 pout ( dbm ) im3 ( dbm ) ip3 ( dbm ) im3/pout ( dbc ) ? add (%) - 20 - 15 - 10 - 5 0 5 10 15 20 pin ( dbm ) pout gain ip3 ? add im3 im3/pout - 100 - 80 - 60 - 40 - 20 0 20 40 60 80 pout ( dbm ) im3 ( dbm ) ip3 ( dbm ) im3/pout ( dbc ) ? add (%) - 20 - 15 - 10 - 5 0 5 10 15 20 pin ( dbm ) pout gain ip3 ? add im3 im3/pout - 20 - 15 - 10 - 5 0 5 10 15 20 pin ( dbm ) pout gain ip3 ? add im3 im3/pout - 20 - 100 - 80 - 60 - 40 - 20 0 20 40 60 80 - 15 - 10 - 5 0 5 10 15 20 pout ( dbm ) im3 ( dbm ) ip3 ( dbm ) im3/pout ( dbc ) ? add (%) pin ( dbm ) pout gain ip3 ? add im3 im3/pout - 100 - 80 - 60 - 40 - 20 0 20 40 60 80 - 15 - 10 - 5 0 5 10 15 20 pout ( dbm ) im3 ( dbm ) ip3 ( dbm ) im3/pout ( dbc ) ? add (%) pin ( dbm ) pout gain ip3 ? add im3 im3/pout device: P0120003P frequency: f1=2.1ghz, f2=2.101ghz bias: vds =6v, ids=220ma source matching: mag 0.61 ang - 159.3 load matching: mag 0.48 ang - 155.4 device:P0120003P frequency: f1=2.1ghz, f2=2.101ghz bias: vds =6v,ids=180ma source matching: mag 0.61 ang - 159.3 load matching: mag 0.437 ang - 160.7 id=220ma pin (dbm) pout (dbm) gain (db) im3 (dbm) im3/pout (dbc) ip3 (dbm) id (ma) ?add (%) -15.0 -2.0 13.0 -75.0 -73.0 34.5 220.5 0.0 -10.0 3.2 13.2 -70.2 -73.3 39.9 219.1 0.2 -5.0 8.1 13.1 -59.5 -67.7 42.1 216.4 0.5 0.0 13.1 13.1 -46.0 -59.0 42.6 212.0 1.5 5.0 18.0 13.0 -28.5 -46.5 41.0 205.3 4.9 10.0 23.1 13.1 -2.5 -25.7 35.2 207.5 15.7 15.0 27.6 12.6 11.1 -16.5 33.8 252.6 35.8 id=180ma pin (dbm) pout (dbm) gain (db) im3 (dbm) im3/pout (dbc) ip3 (dbm) id (ma) ?add (%) -15.0 -1.7 13.3 -75.4 -73.7 35.1 178.2 0.1 -10.0 3.5 13.5 -68.7 -72.2 39.6 177.1 0.2 -5.0 8.4 13.4 -56.1 -64.5 40.7 174.8 0.6 0.0 13.4 13.4 -41.3 -54.7 40.7 171.2 2.0 5.0 18.4 13.4 -23.0 -41.3 39.0 165.1 6.6 10.0 23.4 13.4 0.6 -22.8 33.9 173.1 20.1 15.0 27.6 12.6 11.1 -16.5 34.0 216.4 41.9
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 5 - P0120003P 800mw gaas power fet (pb - free type) technical note tc =25 c , vds =6v, ids=220ma, pin=0dbm [ pout - lstate ] f = 2.1ghz g pout : 0.46 e 135.5 source : 0.76 e - 166.1 pout max : 14.4dbm [ ip3 - lstate] f1 = 2.1ghz f2 = 2.101ghz g ip3 : 0.52 e - 155.9 source : 0.73 e - 170.1 ip3 max : 40.45dbm tc =25 c , vds =6v, ids=180ma, pin=0dbm [ pout - lstate ] f = 2.1ghz g pout : 0.46 e 138.7 source : 0.76 e - 166.1 pout max : 14.4dbm [ ip3 - lstate] f1 = 2.1ghz f2 = 2.101ghz g ip3 : 0.42 e - 160.2 source : 0.73 e - 170.1 ip3 max : 39.3dbm + j 50 13.15 14.4 + j 25 + j100 - j100 - j50 - j25 25 o 50 o 100 o + j 50 13.15 14.4 + j 25 + j100 - j100 - j50 - j25 25 o 50 o 100 o 39.2 + j25 + j50 + j100 - j100 - j50 - j25 25 o 50 o 100 o 40.45 39.2 + j25 + j50 + j100 - j100 - j50 - j25 25 o 50 o 100 o 40.45 + j50 36.8 + j25 + j100 - j100 - j50 - j25 25 o 50 o 100 o 39.3 36.8 + j25 + j100 - j100 - j50 - j25 25 o 50 o 100 o 39.3 13.9 + j25 + j50 + j100 - j100 - j50 - j25 25 o 50 o 100 o 14.4 13.9 + j25 + j50 + j100 - j100 - j50 - j25 25 o 50 o 100 o 14.4
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 6 - P0120003P 800mw gaas power fet (pb - free type) technical note nf characteristics [note] the data for smith charts were measured at frequency of 2ghz and tc of 25 c. vds=6v ids=220ma vds=6v ids=160ma mag ang(deg) mag ang(deg) 0.4 0.58 0.43 -90.8 0.09 21.8 0.4 0.53 0.43 -93.5 0.08 21.6 0.6 0.55 0.35 -35.4 0.13 20.3 0.6 0.49 0.33 -45.3 0.11 19.8 0.8 0.72 0.28 13.4 0.16 18.6 0.8 0.63 0.26 3.9 0.14 18.2 1.0 0.77 0.36 61.4 0.16 17.6 1.0 0.69 0.32 54.5 0.14 17.2 1.2 0.95 0.40 99.2 0.13 16.5 1.2 0.88 0.34 94.5 0.12 16.1 1.4 0.98 0.47 129.9 0.09 15.7 1.4 0.89 0.43 125.8 0.09 15.4 1.6 1.07 0.51 159.5 0.05 15.0 1.6 0.96 0.46 156.0 0.05 14.7 1.8 1.16 0.55 -173.9 0.04 14.3 1.8 1.04 0.52 -177.3 0.04 14.1 2.0 1.55 0.47 -141.6 0.12 13.4 2.0 1.43 0.41 -141.5 0.12 13.1 vds=6v ids=180ma mag ang(deg) 0.4 0.51 0.44 -89.2 0.08 21.9 0.6 0.51 0.33 -42.7 0.11 19.9 0.8 0.65 0.27 6.7 0.14 18.3 1.0 0.71 0.33 56.8 0.13 17.3 1.2 0.90 0.34 96.5 0.13 16.2 1.4 0.91 0.45 127.5 0.08 15.5 1.6 0.99 0.48 157.2 0.05 14.8 1.8 1.08 0.53 -176.2 0.04 14.1 2.0 1.49 0.42 -140.2 0.12 13.2 rn/50 associated gain(db) nfmin (db) gopt rn/50 freq. (ghz) freq. (ghz) freq. (ghz) associated gain(db) nfmin (db) gopt rn/50 associated gain(db) nfmin (db) gopt ids=220ma ids=180ma ids=160ma 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.55 2.05 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.55 2.05 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.49 1.99 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.49 1.99 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.43 1.93 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 0 1.0 1.0 - 1.0 10.0 10.0 - 10.0 5.0 5.0 - 5.0 2.0 2.0 - 2.0 3.0 3.0 - 3.0 4.0 4.0 - 4.0 0.2 0.2 - 0.2 0.4 0.4 - 0.4 0.6 0.6 - 0.6 0.8 0.8 - 0.8 1.43 1.93 0 0.5 1.0 1.5 2.0 2.5 frequency (ghz) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 nf (db) ids=220ma ids=180ma ids=160ma
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, s akae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 7 - P0120003P 800mw gaas power fet (pb - free type) technical note application circuit : 2110 - 2170mhz c1 c5 r1 c2 l1 c3 l2 c4 rf in ( rs =50 o ) rf out (rl=50 o ) vd c1 c5 r1 c2 l1 c3 l2 c4 rf in ( rs =50 o ) rf out (rl=50 o ) vd vg d.u.t z1 z2 z3 z4 ref. des. value part number r1 82o susumu rr0816 series c1 1pf c2 1pf c3 0.1f c4 4pf c5 0.1f l1 27nh l2 27nh murata grm18 series toko ll1608 series rf in kp023j rf out vd (+6 v) vg ( - 0.7 ~ - 2 v) c3 r1 c2 c1 c5 l2 c4 l1 1.9 2 2.1 2.2 2.3 frequency (ghz) - 30 - 20 - 10 0 10 20 s11 s22 s12 s21 s - parameters (db) 1.9 2 2.1 2.2 2.3 frequency (ghz) - 30 - 20 - 10 0 10 20 s11 s22 s12 s21 1.9 2 2.1 2.2 2.3 frequency (ghz) - 30 - 20 - 10 0 10 20 s11 s22 s12 s21 s - parameters (db) ref. designator electrical length @ 2.1ghz (deg) z1 4.08 z2 13.61 z3 8.62 z4 6.38 all microstrip lines have a line impedance of 50 w .
specifications and information are subject to change without notice. 200 6 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 8 - technical note P0120003P 800mw gaas power fet (pb - free type) [typical performance] kp023j application circuit vds=6v, ids=220ma, tc=25 c frequency characteristics we re measured with pout at 17dbm. 10 11 15 20 25 30 35 40 45 180 185 190 195 200 205 210 215 - 1 1 3 5 7 9 pout,gain,ip3,ids vs pin pout ( dbm ) gain (db) ip3 ( dbm ) ids ( ma ) pin ( dbm ) ip3 ids gain pout 15 20 25 30 35 40 45 180 185 190 195 200 205 210 215 - 1 1 3 5 7 9 pout,gain,ip3,ids vs pin pout ( dbm ) gain (db) ip3 ( dbm ) ids ( ma ) pin ( dbm ) ip3 ids gain pout 35 36 37 38 39 40 41 42 43 2100 2120 2140 2160 2180 ip3 vs frequency ip3 ( dbm ) frequency (mhz) vds =6v vds =5v vds =4v 35 36 37 38 39 40 41 42 43 2100 2120 2140 2160 2180 ip3 vs frequency ip3 ( dbm ) frequency (mhz) vds =6v vds =5v vds =4v 38.0 38.5 39.0 39.5 40.0 40.5 41.0 41.5 42.0 2100 2120 2140 2160 2180 ip3 vs frequency ip3 ( dbm ) frequency (mhz) frequency (mhz) 10.4 10.6 10.8 11.0 11.2 11.4 11.6 2100 2120 2140 2160 2180 gain vs frequency gain (db) vds =6v vds =5v vds =4v 10.4 10.6 10.8 11.0 11.2 11.4 11.6 2100 2120 2140 2160 2180 gain vs frequency gain (db) vds =6v vds =5v vds =4v 11.0 11.1 11.2 11.3 11.4 11.5 2100 2120 2140 2160 2180 gain vs frequency gain (db) frequency (mhz) ids=220ma ids=190ma ids=160ma 11.0 11.1 11.2 11.3 11.4 11.5 2100 2120 2140 2160 2180 gain vs frequency gain (db) frequency (mhz) ids=220ma ids=190ma ids=160ma - 65 - 60 - 55 - 50 - 45 - 40 - 35 10 12 14 16 18 20 22 im3,im5 vs pout im3 ( dbc ) im5 ( dbc ) pout ( dbm ) im3 im5 ids=220ma ids=190ma ids=160ma
specifications and information are subject to change without notice. 200 6 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 9 - technical note P0120003P 800mw gaas power fet (pb - free type) caution: power supply sequence for safe operatio n, electric power should be supplied in following sequence. first, the negative voltage should be applied on the gate, and the voltage should be more negative than the pinch - off voltage when you turn on the power supply. then, drain bias can be applied. fi nally, you can turn on the rf signal. when turning off the power supply, the sequence should be (1)rf signal (2)drain (3) gate. bias circuit [passive biasing] if you use a fixed bias circuit, you sometimes need to control the gate bias to ge t the same ids, since the devices have some margin of pinch - off voltage (vp) variation depending on the wafer lots. if you employ a fixed vgs biasing for your system, you should closely monitor the drain current, particularly when new wafer lots are introd uced. [active biasing] we recommend using an active bias circuit, which can eliminate the influence of vp variation. an example of an active bias circuit called ? current mirror ? is shown below. here, two pnp transistors having the minimum variation of ib e characteristics are used. these transistors adjust vgs by changing vds automatically. it will realize the constant current characteristics, r egardless of the temperature. the circuit should be connected directly in line with where the voltage supplies wo uld be normally connected with the application circuit. of course a matching circuit is required, but it is not shown in this figure. [note] in the measurements of rf performance (pout vs pin, etc) using the application circuit described before, the activ e bias circuit herein was not utilized. the application circuits were biased directly from two power supplies. if you used ids other than 220ma, you can calculate the resistance values as follows: r4 set to be 1k w i 1 : ic of q1a i 2 :ic of q1b v be1 : vbe of q1a v be2 : vbe of q1b r1=(+6v - vds+v be2 - v be1 )/i 1 =(+6v - vds)/i 1 r2=(vds - v be2 )/i 1 r3=(+6v - vds)/(ids+i 2 ) r5=| - 5v - vgs|/i 2 attention to heat radiation in the layout design of the printed circuit board (pcb) on which the power fets are attached, the heat radiation to minimize the device junction temperature should be taken into account, since it significantly affects the mttf and rf performance. in any environment, the junction temperature should be lower than the absolute maximum r ating during the device operation and it is recommended that the thermal design has enough margin. gate voltage 0 v bias voltage drain voltage on on 0 v more than 1ms off bias voltage more than 1ms off gate voltage 0 v bias voltage drain voltage on on 0 v more than 1ms off bias voltage more than 1ms off gate voltage 0 v bias voltage drain voltage on on 0 v more than 1ms off bias voltage more than 1ms off p0110003p P0120003P application circuit r4 q1a gnd r2 vgs +6 v vds r1 - 5 v r3 r5 q1b gnd vds +5.9v ids 220ma q1 umt1n (rohm) r1 16o 1/10w r2 1.8ko 1/10w r3 0.22o rl series (susumu) r4 1ko 1/10w r5 1.3ko 1/10w
specifications and information are subject to change without notice. 200 6 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 10 - technical note P0120003P 800mw gaas power fet (pb - free type) the junction temperature can be calculated by the following formula. t jmax =(vds*ids - p out )(r th +r board +r hs )+t a p out : output power r th : thermal resistance b etween channel and case r board : thermal resistance of pcb r hs : thermal resistance of heat sink t a : ambient temperature t jmax : maximum junction temperature generally, there are two ways of heat radiation. one is the plated thru hole and the other is the h eat sink. key points will be illustrated in each case below. note that no measure against oscillation is adopted in the figures. in the design of circuit and layout, you should take stabilizing into account if necessary. [using thru hole] ? multiple plated thru holes are required directly below the device. ? place more than 2 machine screws as close to the ground pin (pin 4) as possible . the pcb is screwed on the mounting plate or the heat sink to lower the thermal resistance of the pcb. ? lay out a large ground pad area with multiple plated thru holes around pin 4 of the device. ? the required matching and feedback circuit described in the application circuit examples should be connected to the device, although it is not shown in the figure bel ow. [using heat sink] if you cannot get the junction temperature lower than the absolute maximum rating only with the plated thru holes, then you need to employ the heat sink. attach ing the heat sink directly under pin 4 of the device i mproves the thermal resistance between junction and ambient. [note] ? ground/thermal vias are critical for the proper device performance . drill s of the recommended diameter s should be used in the fabrication of via s . ? add as much copper a s possible to inner and outer layers near the part to ensure optimal thermal performan ce. ? mounting screws can be added near the part to fasten the board to heat sink . ensure that the ground/thermal via region contacts the heat sink . ? do not put solder mask on the backside of the pcb in the region where the board contacts the heat sink . ? rf trace width depends upon the pcb material and construction. ? use 1 oz. copper minimum. f 0.4 plated thru holes f 0.3 plated thru holes f 3 plated thru hole for 2.5 machine screws f 5 soldermask keepout package outline keepout f 3 plated thru hole for 2.5 machine screws grand plane f 5 soldermask f 0.4 plated thru holes f 0.3 plated thru holes f 3 plated thru hole for 2.5 machine screws f 5 soldermask keepout package outline keepout f 3 plated thru hole for 2.5 machine screws grand plane f 5 soldermask f 0.4 plated thru holes f 3 plated thru hole for 2.5 machine screws package outline 4 - r0.3 heatsink 2 2.95 0.6 1.9 2.85 (4 - r0.3) f 5 soldermask keepout f 3 plated thru hole for 2.5 machine screws f 5 soldermask keepout grand plane grand plane
specifications and information are subject to change without notice. 200 6 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 11 - technical note P0120003P 800mw gaas power fet (pb - free type) package drawing laser marking convection reflow profile (recommended) [note] the reflow profile is different fr om the one for sn - pb plating. if you use a soldering iron to attach the devices, please beware of the followings. (1) the tip of the iron should be grounded. or you should use an iron that is electrostatic discharge proof. (2) the temperature of the iron tip should be lower than 240 c and the soldering should be completed within 10 seconds. attention to esd generally, gaas devices are very sensitive to electrostatic discharge (esd). to reduce the esd damage, please pay attention to the followings. the de vices should be stored with the electrodes short - circuited by conductive materials. the workstation and tools should be grounded for safe dissipation of the static charges in the environment. the workpeople are to wear anti - static clothing and wrist straps . for safety reasons, resistance of 10m w or so should exist between workpeople and ground. attention to moisture the moisture sensitivity level (msl) of P0120003P is 3, which means that the ? floor life ? is 168 hours below 30 c with relative humidity (rh) of 60%. the devices are usually shipped in moisture - resistant alumina - laminated packages. after breaking the packages, they are to be stored under normal temperature and humidity (5 - 35 c, 45 - 75%), with no corrosive gases or dust in the environment. assem ble the devices within 168 hours after breaking the package, or you have to bake them at 85 c for 24 hours before assembling. reliability and environmental issues the detailed reliability information can be seen in reliability and quality assurance , which you can download from our web site. eudyna ?s yokohama works , where the devices are manufactured, has been accredited iso - 14001 since 1999. we control the toxic materials in our products in accordance with prtr regulation. lead and fluoride to realize p b - free products, sn - bi is used for the lead frame plating. any fluoride that has been determined by the montreal agreement is not used in the products. 1 2 3 1.5 0.08 1.5 0.08 4.5 0.1 1.6+0.15 f 1.6 0.3 2.5 0.1 4.0 0.25 1.1 0.3 0.42 0.06 0.47 0.06 0.42 0.06 1.5 0.1 0.4+0.03 - 0.02 0.1 0.05 - 0.2 1.3+0.1 - 0 p * 3 1 1.65 max b a (0.65) * 2 a: 0.67+0 - 0.1 b: 0.45 1,2,3: lot no. * * p: product type 60 120 180 240 0 100 200 300 temperature ( c) 0 time (sec) preheat:160 c 90 sec < 45 sec 260 5 c 5sec max time above 230 c 60 120 180 240 0 100 200 300 temperature ( c) 0 time (sec) preheat:160 c 90 sec < 45 sec 260 5 c 5sec max time above 230 c
specifications and information are subject to change without notice. 200 6 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 12 - technical note P0120003P 800mw gaas power fet (pb - free type) caution gaas fet chips are used in P0120003P. for safety reasons, you should attend to the following matters: (1) do not put the products in your mouse. (2) do not make the products into gases or powders, by burning, breaking or chemical treatments. (3) in case you abandon the products, you should obey the related laws and regulations.
specifications and information are subject to change without notice. 2006 - 11 eudyna devices inc. 1,kanai - cho, sakae - ku, yokohama, 244 - 0845 japan phone : +81 - 45 - 853 - 8150 fax : +81 - 45 - 853 - 8170 e - mail : www - sales - s@eudyna.com web site : www.eudyna.com - 13 - technical note P0120003P 800mw gaas power fet (pb - free type) ? the inf ormation in this document is subject to change without notice. please refer for the most up - to - date information before you start design using eudyna ? s devices. ? any part of this document may not be reproduced or copied. ? eudyna does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of eudyna ? s products described in this documents. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of eudyna or others. ? descriptions of circuits and other related information in this document are for illustrative purpose in the examples of the device operation and application. eudyna does not assume any responsibili ty for any losses incurred by customers or third parties arising from the use of the circuits and other related information in this document. ? eudyna ? s semi - conductor device products are designed and manufactured for use in the standard communication equipm ent. customers that wish to use these products in applications not intended by eudyna must contact eudyna ? sales representatives in advance. ? generally, it is impossible to eliminate completely the defects in semi - conductor products, while eudyna has been c ontinually improving the quality and reliability of the products. eudyna does not assume any responsibility for any losses incurred by customers or third parties by or arising from the use of eudyna ? s semi - conductor products. customers are to incorporate s ufficient safety measures in the design such as redundancy, fire - containment and anti - failure features.

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