T1M5F600D maximum ratings (tj= 25 unless otherwise noticed) features sensitive gate trigger current in four trigger mode s blocking voltage to 600 volts glass passivated surface for reliability and unifor mity surface mount package pbfree package mechanical data case: molded plastic weight: 0.004 ounces, 0.12 grams sensitive gate triacs sillicon bidirectional thyristors triacs 1.0 amperes rms 600 volts rating symbol value unit peak repetitive offC state voltage ( t j = 40 to 110 , sine wave, 50 to 60 hz; gate open) v drm , v rrm 600 volts onstate rms current, full cycle sine wave 50 to 60 hz ( t c = 50 ) i t(rms) 1.0 amp peak nonrepetitive surge current, full cycle sine wave 60 hz (tj =25 ) i tsm 8 amps circuit fusing consideration (t = 8.3 ms) i t 0.26 a s peak gate power ( t 2.0us ,tc = 80 Q ) p gm 5.0 watt average gate power ( tc = 80 , t 8.3 ms ) Q p g(av) 0.1 watt peak gate current ( t 2.0us ,tc = 80 Q ) i gm 1.0 amp peak gate voltage ( t 2.0us ,tc = 80 Q ) v gm 5.0 volts operating junction temperature range t j 40 to +110 storage temperature range tstg 40 to +150 2 2 rev. 1, dec2008, ktxe04 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a con stant current source such that the voltage ratings of the devices are exce eded. semiconductor lite-on sot223 1 main terminal 1 2, 4 main terminal 2 3 gate pin assignment all dimensions in millimeter sot-223 dim. min. max. ac d fg h j b 6.30 6.70 3.70 3.30 1.50 1.75 0.89 0.60 2.90 3.20 2.20 0.02 0.10 1.50 k 0.24 0.85 l 0 m 2.40 0.35 2.00 1.05 10 6.70 s 7.30
rating and characteristic curves T1M5F600D series characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (vd=rated vdrm and vrrm; gate open) t j =110 i drm i rrm ---- ---- ---- ---- 10 100 ua ua peak forward onstate voltage (i tm= 1.4a peak @tp 2.0 ms, duty cycle 2%) Q Q v tm 1.9 volts gate trigger current (continuous dc) (v d = 12 vdc; r l = 100 ohms) i gt1 i gt2 i gt3 i gt4 5.0 5.0 5.0 7.0 ma holding current (v d = 12 v, initiating current = 200 ma, gate open) i h 1.5 10 ma turnon time (v d = rated vdrm , i tm = 1.0 a pk, i g = 25 ma) tgt 2 us gate trigger voltage (continuous dc) (v d = 12 vdc; r l =100 ohms) v gt1 v gt2 v gt3 v gt4 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 volts latching current (v d =12v,i g = 10 ma) i l1 i l2 i l3 i l4 1.6 10.5 1.5 2.5 15 20 15 15 ma critical rate of rise of offstate voltage (v d =rated v drm ,exponential waveform, gate open, t j =110 ) dv/dt 20 60 v/us thermal characteristics electrical characteristics (t j =25 unless otherwise noted) off characteristics on characteristics dynamic characteristics characteristic symbol value unit thermal resistance junction to ambient rthja 156 / w thermal resistance junction to tab (measured on m t2 tab adjacent to purposes) rthjt 25 /w maximum device temperature for soldering purposes ( for 10 seconds maximum) t l 260
rating and characteristic curves T1M5F600D 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30 40 50 60 70 80 90 100 110 tc,case temperature( ) it(rms),rms onstate current(amps) figure 2. rms current derating figure 1. rms current derating 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ta,ambient temperature( ) it(rms),rms onstate current(amps) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 20 30 40 50 60 70 80 90 100 110 ta,ambient temperature( ) it(rms),rms onstate current(amps) figure 3. power dissipation = 30 90 120 180 dc 60 = 30 90 120 180 dc 60 = 30 90 120 180 dc 60
rating and characteristic curves T1M5F600D specifications mentioned in this publication are su bject to change without notice. figure 6. maximum allowable surge current 1 10 100 number of cycles 0 4 8 12 16 t j =25 f= 60mhz i tsm , peak surge current (amps)
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