? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c90 a i dm t c = 25 c, pulse width limited by t jm 360 a i a t c = 25 c45 a e as t c = 25 c3 j p d t c = 25 c 960 w t j -55...+150 c t jm 150 c t stg -55...+150 c t l 1.6mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (ixtk) 1.13/10 nm/lb.in. f c mounting force (ixtx) 20..120 / 4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 250 v v gs(th) v ds = v gs , i d = 3ma 2.0 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 33 m linearl2 tm power mosfet w/extended fbsoa ixtk 90n25l2 ixtx 90n25l2 n-channel enhancement mode avalanche rated v dss = 250v i d25 = 90a r ds(on) < 33m ds100080(11/08) g = gate d = drain s = source tab = drain to-264 g d s g d s plus247 (tab) (tab) preliminary technical information features z designed for linear operation z international standard packages z avalanche rated z guaranteed fbsoa at 75 c advantages ? easy to mount ? space savings ? high power density applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators
ixys reserves the right to change limits, test conditions, and dimensions. IXTK90N25L2 ixtx90n25l2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 35 50 65 s c iss 23 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2140 pf c rss 360 pf t d(on) 50 ns t r 175 ns t d(off) 40 ns t f 160 ns q g(on) 640 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 125 nc q gd 385 nc r thjc 0.13 c/w r thcs 0.15 c/w safe operating area specification symbol test conditions characteristic values min. typ. max. soa v ds = 250v, i d = 2.3a, t c = 75 c, tp = 5s 575 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 90 a i sm repetitive, pulse width limited by t jm 360 a v sd i f = 45a, v gs = 0v, note 1 1.5 v t rr 266 ns i rm 23 a q rm 3.0 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 45a, -di/dt = 100a/ s, v r = 80v, v gs = 0v to-264 (ixtk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixtx) outline
? 2008 ixys corporation, all rights reserved IXTK90N25L2 ixtx90n25l2 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 20v 12v 10v 7 v 5 v 6 v 8 v 9 v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 7 v 6 v 8 v 9 v 10 v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 5 v 7v 6v 8 v fig. 4. r ds(on) normalized to i d = 45a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 90a i d = 45a fig. 5. r ds(on) normalized to i d = 45a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 20 40 60 80 100 120 140 160 180 200 220 240 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTK90N25L2 ixtx90n25l2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.54.04.55.05.56.06.57.07.58.08.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 1000 q g - nanocoulombs v gs - volts v ds = 125v i d = 45a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved IXTK90N25L2 ixtx90n25l2 ixys ref: t_90n25l2(9r)12-01-08 fig. 13. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms fig. 14. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
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