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january 2012 doc id 15497 rev 5 1/14 14 stac2932b hf/vhf/uhf rf power n-channel mosfets features gold metallization excellent thermal stability common source push-pull configuration p out = 300 w min. with 20 db gain @ 175 mhz in compliance with the 2002/95/ec european directive st air cavity packaging technology - stac ? package description the stac2932b is a gold metallized n-channel mos field-effect rf power transistor, intended for use in 50 v dc large signal applications up to 250 mhz. the stac2932b benefits from the latest generation of efficient, patent-pending package technology, otherwise known as stac ? figure 1. pin connection stac244b air cavity 1 1 2 2 3 1. drain 2. gate 3. source (bottom side) table 1. device summary order code marking base qty. package packaging STAC2932BW stac2932 (1) 20 stac244b tray 1. for more details please refer to chapter 7: marking, packing and shipping specifications . www.st.com
contents stac2932b 2/14 doc id 15497 rev 5 contents 1 electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 12 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 stac2932b electrical data doc id 15497 rev 5 3/14 1 electrical data 1.1 maximum ratings (t case = 25 c) 1.2 thermal data table 2. absolute maximum ratings symbol parameter value unit v (br)dss (1) 1. t j = 150 c drain source voltage 125 v v dgr drain-gate voltage (r gs = 1 m )125v v gs gate-source voltage 20 v i d drain current 40 a p diss power dissipation 625 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r thjc junction - case thermal resistance 0.28 c/w electrical characteristics stac2932b 4/14 doc id 15497 rev 5 2 electrical characteristics t case = +25 c 2.1 static 2.2 dynamic table 4. static (per side) symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 100 ma 125 v i dss v gs = 0 v v ds = 50 v 50 a i gss v gs = 20 v v ds = 0 v 250 na v gs(q) v ds = 10 v i d = 250 ma 1.5 2.5 4.0 v v ds(on) v gs = 10 v i d = 10 a 3.0 v g fs v ds = 10 v i d = 5 a 5 s c iss v gs = 0 v v ds = 50 v f = 1 mhz 468 pf c oss 206 pf c rss 16 pf table 5. dynamic symbol test conditions min. typ. max. unit p out v dd = 50 v, i dq = 2 x 250 ma, p in = 4 w, f = 175 mhz 300 390 w h d v dd = 50 v, i dq = 2 x 250 ma, p in = 4 w, f = 175 mhz 55 68 % stac2932b impedance doc id 15497 rev 5 5/14 3 impedance figure 2. current conventions note: measured gate to gate and drain to drain, respectively. table 6. impedance data freq. (mhz) z in ( )z dl ( ) 175 mhz 2.0 - j2.0 3.5 + j5.2 typical performance stac2932b 6/14 doc id 15497 rev 5 4 typical performance figure 3. capacitances vs drain supply voltage figure 4. output power vs drain supply voltage # a p a c i t a n c e s p & |