vishay siliconix sia425edj document number: 65575 s09-2268-rev. a, 02-nov-09 www.vishay.com 1 p-channel 20-v (d-s) mosfet notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufactu ring. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. p-channel mosfet s d r g powerpak sc-70-6l-single 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm marking code x x x b m x lot tracea b ility and date code part # code ordering information: SIA425EDJ-T1-GE3 (lead (p b )-free and halogen-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 4.5 a a t c = 70 c - 4.5 a t a = 25 c - 4.5 a, b, c t a = 70 c - 4.5 a, b, c pulsed drain current i dm - 15 continuous source-drain diode current t c = 25 c i s - 4.5 a t a = 25 c - 2.4 b, c maximum power dissipation t c = 25 c p d 15.6 w t c = 70 c 10 t a = 25 c 2.9 b, c t a = 70 c 1.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 32 43 c/w maximum junction-to-case (drain) steady state r thjc 68 features ? halo g en-free accordin g to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? typical esd protection 2400 v ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch and battery switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.060 at v gs = - 4.5 v - 4.5 a 4.9 nc 0.065 at v gs = - 3.6 v - 4.5 a 0.080 at v gs = - 2.5 v - 4.5 a 0.120 at v gs = - 1.8 v - 2
www.vishay.com 2 document number: 65575 s09-2268-rev. a, 02-nov-09 vishay siliconix sia425edj notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 15 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 4 a v ds = 0 v, v gs = 12 v 8 ma zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 4.2 a 0.050 0.06 v gs = - 3.6 v, i d = - 4.0 a 0.053 0.065 v gs = - 2.5 v, i d = - 3.6 a 0.065 0.080 v gs = - 1.8 v, i d = - 2 a 0.091 0.120 forward transconductance a g fs v ds = - 10 v, i d = - 4.2 a 15 s dynamic b gate resistance r g f = 1 mhz 1.2 6 12 k tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.2 i d ? - 4.5 a, v gen = - 4.5 v, r g = 1 1.2 2.4 s rise time t r 510 turn-off delay time t d(off) 14 28 fall time t f 10 20 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.2 i d ? - 4.5 a, v gen = - 10 v, r g = 1 0.5 1 rise time t r 1.4 2.8 turn-off delay time t d(off) 20 40 fall time t f 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.5 a pulse diode forward current i sm - 15 body diode voltage v sd i s = - 4.5 a, v gs = 0 v - 0.9 - 1.2 v body diode reverse recovery time t rr i f = - 4.5 a, di/dt = 100 a/s, t j = 25 c 20 40 ns body diode reverse recovery charge q rr 11 20 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 8
document number: 65575 s09-2268-rev. a, 02-nov-09 www.vishay.com 3 vishay siliconix sia425edj typical characteristics 25 c, unless otherwise noted gate current vs. gate-to-source volta g e output characteristics on-resistance vs. drain current v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent (ma) 0 2 4 6 8 10 036912151 8 t j = 25 c v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =2 v v gs =1 v v gs =1.5 v 0.00 0.03 0.06 0.09 0.12 0.15 03691215 v gs =1. 8v v gs =4.5 v v gs =3.6 v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) gate current vs. gate-to-source volta g e transfer characteristics on-resistance vs. junction temperature v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent (a) 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0 3 6 9 12 15 1 8 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,3.6 v ,2.5 v ;i d =4.2a v gs =1. 8v ;i d =2a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 65575 s09-2268-rev. a, 02-nov-09 vishay siliconix sia425edj typical characteristics 25 c, unless otherwise noted soure-drain diode forward volta g e threshold volta g e 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source volta g e sin g le pulse power, junction-to-ambient 0.00 0.03 0.06 0.09 0.12 0.15 012345 i d = 4.2 a; t j = 25 c i d =2a;t j = 25 c i d = 4.2 a; t j = 125 c i d =2a;t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 4 8 12 16 20 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operatin g area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 65575 s09-2268-rev. a, 02-nov-09 www.vishay.com 5 vishay siliconix sia425edj typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current deratin g * 0 3 6 9 12 15 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power deratin g 0 5 10 15 20 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 65575 s09-2268-rev. a, 02-nov-09 vishay siliconix sia425edj typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65575 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 10 -1 10 -4 single p u lse 0.1 0.2 0.02 0.05
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