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  npn low saturation transistor fpn330 fpn330a absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted these devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 a continuous. sourced from process nb. symbol characteristic max units fpn330 / fpn330a p d total device dissipation 1.0 w r jc thermal resistance, junction to case 50 c/w r ja thermal resistance, junction to ambient 125 c/w symbol parameter value units v ceo collector-emitter voltage 30 v v cbo collector-base voltage 50 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 3.0 a t j , t stg operating and storage junction temperature range -55 to +150 c fpn330 / fpn330a to-226 c b e ? 1999 fairchild semiconductor corporation
electrical characteristics ta = 25 c unless otherwise noted off characteristics symbol parameter test conditions min max units bv ceo collector-emitter breakdown voltage i c = 10 ma, i b = 0 30 v bv cbo collector-base breakdown voltage i c = 100 a, i e = 0 50 v bv ebo emitter-base breakdown voltage i e = 100 a, i c = 0 5.0 v i cbo collector cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0, t a = 100 c 100 10 na a i ebo emitter cutoff current v eb = 4.0 v, i c = 0 100 na on characteristics* h fe dc current gain i c = 100 ma, v ce = 2.0 v 330 330a i c = 1.0 a, v ce = 2.0 v i c = 2.0 a, v ce = 2.0 v 100 250 120 50 v ce( sat ) collector-emitter saturation voltage i c = 1.0 a, i b = 100 ma 330 330a i c = 2.0 a, i b = 200 ma 500 450 1.0 mv mv v v be( sat ) base-emitter saturation voltage i c = 1.0 a, i b = 100 ma 1.25 v v be( on ) base-emitter saturation voltage i c = 1.0 a, v ce = 2.0 v 1.0 v small signal characteristics c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 30 pf f t transition frequency i c = 100 ma, v ce = 5.0 v, f = 100 mhz 100 mhz * pulse test: pulse width 300 s, duty cycle 2.0% fpn330 / fpn330a npn low saturation transistor (continued)
fpn330 / fpn330a typical characteristics npn low saturation transistor (continued) base-emitter saturation voltage vs collector current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v -base-emitter saturation voltage(v) c besat 25 c - 40 c 125 c = 1 0 base-emitter on voltage vs collector current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i - collector current (a) v - base-emitter on voltage (v) c beon 25 c - 40 c 125 c v = 2.0v ce input/output capacitance vs reverse bias voltage 0.1 0.5 1 10 20 50 100 0 20 40 60 80 100 120 v - collector voltage (v) capacitance (pf) ce f = 1.0mhz c ibo c obo current gain vs collector current 0.0001 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 i - collector current (a) h - current gain c fe 25 c 125 c - 40 c v = 2.0v ce collector-emitter saturation voltage vs collector current 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 i - collector current (a) v - collector-emitter voltage (v) c cesat - 40 c 25 c 125 c = 1 0 power dissipation vs am bient tem pe rat ure 0 25 50 75 100 125 150 0 0. 2 5 0.5 0. 7 5 1 te mpe rat u r e ( c ) p - power dissipation (w) d to- 226
to-226ae tape and reel data october 1999, rev. a1 to -226ae packaging conf iguratio n: figur e 1.0 1,500 un its per eo70 box for std option 5eo70boxesper int ermediate box
to-226ae tape and reel data, continued october 1999, rev. a1 to-226ae reeling style configuration: figure 2.0 style "a" d26z, d70z (s/h) machine option "a"(h) style "e" d 27z, d71z (s/h) machine option "e"(j) first wire off is emitter (on pkg. 92) adhesive tape is on the top side flat of transistor is on bottom first wire off is col lector adhesive tape is on bottom side flat of transistor is on top order style d75z (p) first wire off is col lector (on pkg. 92) adhesive tape is on the top side flat of transistor is on top first wire off is emitter adhesive tape is on bottom side flat of transistor is on bottom order style d74z (m) to-226ae radial ammo packaging conf iguration: figure 3.0
to-226ae tape and reel data, continued october 1999, rev. a1 item descri ption base of package to lead bend component height lead clinch he ight component base height component alignment (side/ side ) component alignment ( front/back ) component pitch feed hol e pi t ch hole center to first lead hole center to component center lead spread lead thickness cut lead length taped lead lengt h taped lead thickness carrier tape thickness carrier tapewidth hold - down tape width hold - down tape position feed hole position sprocket hole diameter lead spring o ut sym bol b hb ho h1 pd hd p po p1 p2 f1/f2 d l l1 t t1 w wo w1 w2 do s dimension 0.0 98 (ma x ) 1.0 78 (+/- 0 .0 50 ) 0.6 30 (+/- 0 .0 20 ) 0.7 48 (+/- 0 .0 20 ) 0.0 40 (ma x) 0.0 31 (ma x) 0.5 00 (+/- 0 .0 20 ) 0.5 00 (+/- 0 .0 08 ) 0.1 50 (+0.0 09 , -0.01 0 ) 0.2 47 (+/- 0 .0 07 ) 0.1 04 (+/- 0 .010) 0.0 18 (+0.0 02 , -0.00 3) 0.4 29 (ma x) 0.2 09 (+0.0 51 , -0.05 2) 0.0 32 (+/- 0 .0 06 ) 0.0 21 (+/- 0 .0 06 ) 0.7 08 (+0.0 20 , -0.01 9) 0.2 36 (+/- 0 .0 12 ) 0.0 35 (ma x) 0.3 60 (+/- 0 .0 25 ) 0.1 57 (+0.0 08 , -0.00 7) 0.0 04 (ma x) note : all dimensions are in inches. hb h1 ho po p2 p1 f1 do p pd b d l1 l s wo w2 w t t1 hd w1 item descript ion symbol minimum maximum reel diamet er d1 13.975 14.025 ar bo r hol e di a me te r (st andard) d2 1.160 1 .200 (small hole) d2 0.650 0.700 core diameter d3 3.100 3.300 hub recess inner diameter d4 2.700 3.100 hub re cess de pt h w 1 0.370 0.570 flange to flange inner w idth w 2 1.630 1.690 hu b to hu b cente r w idth w 3 2.09 0 note: all dimensions are inches s en si tiv e d ev ice s electrostatic d1 d3 w2 w1 w3 d4 d2 to-226ae tape and reel taping dimension configuration: figur e 4.0 to-226ae reel configuration: figur e 5.0 user directionof feed customized label f63tnr label
to-226ae (fs pkg code 95, 99) to-226ae package dimensions october 1999, rev. a1
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?


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