january 2009 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c www.fairchildsemi.com 1 fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet d g s d g s g d s d-pak (to-252) short-lead i-pak (to-251aa) fdd6780a / FDU6780A_f07 1 n-channel powertrench ? mosfet 25 v, 8.6 m ? features ? max r ds(on) = 8.6 m ? at v gs = 10 v, i d = 16.4 a ? max r ds(on) = 19.0 m ? at v gs = 4.5 v, i d = 12.2 a ? 100% uil test ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional swit ching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. applications ? vcore dc-dc for desktop computers and servers ? vrm for intermediate bus architecture mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 25 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 30 a -continuous (silicon limited) t c = 25 c 48 -continuous t a = 25 c (note 1a) 16.4 -pulsed 100 e as single pulse avalanche energy (note 3) 24 mj p d power dissipation t c = 25 c 32.6 w power dissipation t a = 25 c (note 1a) 3.7 t j , t stg operating and storage junction temperature range -55 to +175 c r jc thermal resistance, junction to case to-252, to-251 4.6 c/w r ja thermal resistance, junction to ambient to-252 (note 1a) 40 device marking device package reel size tape width quantity fdd6780a fdd6780a d-pak (to-252) 13 ?? 12 mm 2500 units FDU6780A FDU6780A_f071 to-251aa n/a(tube) n/a 75 units
fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 25 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 14 mv/c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.9 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 16.4 a 6.8 8.6 m ? v gs = 10 v, i d = 16.4 a short-lead i-pak version 7.0 8.8 v gs = 4.5 v, i d = 12.2 a 14.1 19.0 v gs = 4.5 v, i d = 12.2 a short-lead i-pak version 14.3 19.2 v gs = 10 v, i d = 16.4 a, t j = 150 c 10.3 13.0 g fs forward transconductance v ds = 5 v, i d = 16.4 a 70 s c iss input capacitance v ds = 13 v, v gs = 0 v, f = 1mhz 927 1235 pf c oss output capacitance 197 265 pf c rss reverse transfer capacitance 181 275 pf r g gate resistance f = 1mhz 1.2 ? t d(on) turn-on delay time v dd = 13 v, i d = 16.4 a, v gs = 10 v, r gen = 6 ? 714ns t r rise time 310ns t d(off) turn-off delay time 16 29 ns t f fall time 310ns q g total gate charge v gs = 0 v to 10 v v dd = 13 v, i d = 16.4 a 17 24 nc q g total gate charge v gs = 0 v to 5 v 9.2 13 nc q gs gate to source charge 2.8 nc q gd gate to drain ?miller? charge 4.0 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 3.1 a (note 2) 0.8 1.2 v v gs = 0 v, i s = 16.4 a (note 2) 0.9 1.3 t rr reverse recovery time i f = 16.4 a, di/dt = 100 a/ s 15 27 ns q rr reverse recovery charge 4 10 nc
fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c notes : 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 2: pulse test: pulse width < 300 s, duty cycle < 2.0%. 3: e as of 24 mj is based on starting t j = 25 c, l = 1 mh, i as = 7 a, v dd = 23 v, v gs = 10 v. 100% test at l = 0.1 mh, i as = 13 a. 40 c/w when mounted on a 1 in 2 pad of 2 oz copper 96 c/w when mounted on a minimum pad. a) b)
fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 v gs = 8 v v gs = 4.5 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 6 v v gs = 4 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 020406080100 0 1 2 3 4 5 6 v gs = 8 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 6 v v gs = 4 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 16.4 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 46810 5 10 15 20 25 i d = 16.4 a t j = 25 o c t j = 150 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234567 0 20 40 60 80 100 v ds = 3 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c figure 7. 0369121518 0 2 4 6 8 10 q g , gate charge (nc) v gs , gate to source voltage (v) i d = 16.4 a v dd = 13 v v dd = 10 v v dd = 16 v gate charge characteristics figure 8. 0.1 1 10 30 100 1000 3000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 30 100 t j = 150 o c t j = 125 o c t j = 25 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 175 0 15 30 45 60 limited by package r t jc = 4.6 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 70 0.1 1 10 100 200 10 us dc 100 ms 10 ms 1 ms 100 us i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 4.6 o c/w t c = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 100 1000 2000 single pulse r t jc = 4.6 o c/w t c = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 0.01 0.1 1 single pulse r t jc = 4.6 o c/w duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t j & x r t j & + t & figure 14. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 0.003 0.01 0.1 1 2 single pulse r t ja = 96 o c/w (note 1b) duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t j $ x r t j $ + t $ transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com fdd6780a / FDU6780A_f071 n-channel power trench ? mosfet ?2009 fairchild semiconductor corporation fdd6780a / FDU6780A_f071 rev.c rev. i37 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on ou r web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any wa rranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? 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