c-band internally matched power gaas mesfet output power, p out (dbm) nez7177-8d nez7177-8dl nez7177-4d NEZ7177-4DL electrical characteristics (t c = 25 c) part number nez7177-4d nez7177-8d NEZ7177-4DL nez7177-8dl package outline t-61 t-61 symbols parameters and conditions units min typ max min typ max test conditions p 1db output power at p 1db 1 i dsq = 0.8a, (rf off) dbm 35.5 36.5 v ds = 10v i dsq = 1.6a dbm 38.5 39.5 f = 7.1 to 7.7 ghz add power added efficiency @ p 1db % 33 31 zs = z l = 50 ? i ds drain current at p 1db a 1.1 1.5 2.2 3.0 g l linear gain db 7.5 8.5 7.0 8.0 v ds = i0 v im 3 3rd order intermodulation distortion 3 at f 1 = 7.69 ghz -xdl pout = 26 dbm scl 2 i dsq = 0.5 x i dss dbc -45 -42 f 2 = 7.70 ghz option only pout = 29 dbm scl 2 i dsq = 0.5 x i dss dbc -45 -42 equal tones i dss saturated drain current,v gs = 0 v a 1.0 2.3 3.5 2.0 4.5 7.0 v p pinch off voltage i ds = 15 ma v -3.5 -2.0 -0.5 v ds = 2.5 v i ds = 30 ma v -3.5 -2.0 -0.5 g m transconductance i ds = i a ms 1300 i ds = 2 a ms 2600 bv dgo drain - gate breakdown voltage i dg = 15 ma v 20 22 i dg = 30 ma v 20 22 r th(ch-c) thermal resistance (channel to case) c/w 5.0 6.0 2.5 3.0 ? t (ch-c) channel temperature rise 4 ?c 48 48 notes; 1. p 1db : output power at the 1db gain compression point. 2. scl: single carrier level. 3. maximum spec applies to -xdl option only. 4. ? t (ch-c) = t ch - t c = 10 v x i dsq x r th (ch-c) . features high p out 9w (39.5 dbm) typ p 1db for nez7177-8d/8dl 4.5w (36.5 dbm) typ p 1db for nez7177-4d/4dl high efficiency 33% add for 4.5w device 31% add for 9w device low imd -45 dbc im3 @ 29 dbm p out (scl) -8dl -45 dbc im3 @ 26 dbm p out (scl) -4dl sio 2 passivated chip for power/gain stability under rf overdrive class a operation internally matched (in/out) superior gain flatness industry compatible hermetic packages output power and efficiency vs. input power input power, p in (dbm) power added efficiency, add (%) california eastern laboratories 45 40 35 30 25 20 15 20 25 30 35 100% 80% 60% 40% 20% 0% p out efficiency -4d, -4dl -8d, -8dl
nez7177-4d/4dl,-8d/8dl absolute maximum ratings 1 (t c = 25 c) symbols parameters units ratings nez7177-4d/4dl nez7177-8d/8dl v ds drain to source voltage v 15 15 v gs gate to source voltage v -12 -12 v gd gate to drain voltage v -18 -18 i ds drain current a i dss i dss i grf gate current ma 25 50 t ch channel temperature c 175 175 t stg storage temperature c -65 to +175 -65 to +175 p t total power dissipation w 25 50 notes: 1. operation in excess of any one of these parameters may result in permanent damage. total power dissipation vs. case temperature case temperature, t c ( c) input power, p in (dbm) maximum operating limits outline dimensions (units in mm) part number rg max 1 i grf max v ds max ? ma v nez7177-4d/4dl 200 5 10 nez7177-8d/8dl 100 10 10 note: 1. rg max is the maximum recommended series resistance between the gate supply and the fet gate. package outline t-61 intermodulation distortion vs. output power intermodulation distortion, imd (dbc) typical performance curves (t a = 25 c) total output power, p out (dbm) output power, p out (dbm) drain/gate currents, i ds (a) i gs (ma) total power dissipation, p t (w) output power, drain and gate currents vs. input power -20 22 26 30 34 38 42 -30 -40 -50 -60 -70 -80 im 5 im 3 -8dl -4dl 50 60 40 30 20 10 0 02550 75 100 125 150 175 200 infinite heat sink -8d/-8dl -4d/-4dl 15 20 25 30 35 42 38 34 30 26 22 4.5 3.0 1.5 0.0 -1.5 -3.0 p out i ds i gs -8d/-8dl -4d/-4dl gate drain 0.5 0.1 c 1.5, 4 places source r 1.6, 2 places 2.4 6.45 0.05 3.2 12.9 0.2 2.5 min both leads 17.0 0.2 21.0 0.3 10.7 12.0 +0.1 -0.05 0.1 1.6 2.6 0.2 5.0 max 0.2 max gate side indicator depression
nez7177-4d/4dl,-8d/8dl typical small signal scattering parameters (t c = 25 c) 0.1 .964 -96.7 13.227 126.5 .007 39.2 .623 -178.2 0.18 22.4 32.7 0.2 .961 -135.6 8.162 104.3 .008 19.7 .659 178.3 0.27 18.2 30.0 0.5 .960 -173.9 3.583 73.2 .009 10.4 .680 168.7 0.66 11.0 26.0 1.0 .959 162.3 2.441 41.5 .011 1.0 .694 154.4 0.73 7.7 23.4 1.5 .959 138.5 1.299 9.9 .013 -8.4 .709 140.2 1.11 2.2 18.0 2.0 .952 119.9 1.092 -18.4 .014 -26.2 .733 124.1 1.19 0.7 16.3 3.0 .953 80.9 0.864 -74.8 .016 -61.8 .776 92.1 0.85 -1.2 17.3 4.0 .922 37.6 0.901 -134.7 .015 -108.6 .806 58.5 1.32 -0.9 14.5 5.0 .801 -19.0 1.230 157.3 .021 176.3 .803 19.8 1.86 1.7 12.2 5.5 .717 -52.9 1.501 121.3 .031 130.4 .789 -1.2 1.66 3.5 12.0 6.0 .581 -105.9 2.002 74.0 .045 59.6 .714 -28.3 1.86 6.0 11.1 6.3 .508 -148.6 2.354 42.3 .055 17.8 .641 -45.5 1.84 7.4 11.0 6.5 .478 178.0 2.596 19.0 .058 -8.5 .581 -58.0 1.86 8.2 11.1 6.7 .465 141.6 2.807 -5.1 .066 -31.7 .520 -71.1 1.71 8.9 11.3 6.9 .460 105.8 3.011 -31.2 .072 -54.5 .453 -85.9 1.61 9.5 11.6 7.0 .455 88.2 3.038 -44.5 .074 -68.5 .419 -93.3 1.62 9.6 11.5 7.1 .448 71.9 3.039 -57.8 .079 -77.6 .389 -101.2 1.58 9.6 11.3 7.2 .431 55.8 3.040 -70.3 .080 -91.1 .352 -112.1 1.63 9.6 11.1 7.3 .414 39.6 2.915 -82.9 .088 -102.8 .314 -122.4 1.61 9.2 10.6 7.4 .395 23.3 2.902 -96.1 .087 -116.3 .268 -134.4 1.70 9.2 10.3 7.5 .380 6.7 2.897 -106.9 .098 -128.8 .228 -148.4 1.58 9.2 10.2 7.6 .358 -10.2 2.841 -120.1 .098 -139.7 .185 -164.4 1.65 9.0 9.9 7.7 .332 -29.7 2.867 -132.6 .104 -155.7 .144 175.5 1.60 9.1 9.8 7.8 .318 -49.5 2.819 -144.8 .104 -168.2 .116 150.4 1.64 9.0 9.6 7.9 .307 -70.0 2.759 -158.7 .108 178.2 .091 117.1 1.63 8.8 9.4 mag = maximum available gain msg = maximum stable gain note: 1. gain calculations: nez7177-4d/4dl v ds = 10.0 v, i ds = 800 ma frequency s 11 s 21 s 12 s 22 ks 21 mag 1 ghz mag ang mag ang mag ang mag ang (db) (db) j50 j25 j10 0 10 25 100 -j10 -j25 -j50 -j100 j100 0 s 22 0.1 ghz 50 s 11 0.1 ghz s 11 7.9 ghz s 22 7.9 ghz +90 ? +60 ? +30 ? +120 ? +150 ? -150 ? -120 ? -90 ? -60 ? -30 ? 0 ? +180 ? s 21 0.1 ghz .10 .08 .04 s 21 10 6 4 8 2 s 21 7.9 ghz s 12 0.1 ghz s 12 7.9 ghz mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
note: 1. gain calculations: mag = maximum available gain msg = maximum stable gain nez7177-4d/4dl, -8d/8dl 0.1 0.965 -134.9 10.517 108.5 0.004 11.1 0.802 178.3 0.12 20.4 34.1 0.2 0.971 -160.1 5.614 94.0 0.006 18.7 0.823 176.2 0.38 14.9 29.7 0.5 0.976 175.6 2.333 72.4 0.007 19.2 0.832 167.3 0.71 7.3 25.2 1.0 0.978 155.2 1.222 46.4 0.009 18.7 0.833 154.9 0.95 1.7 21.3 1.5 0.974 136.0 0.861 20.4 0.012 12.3 0.830 141.2 1.12 -1.3 16.4 2.0 0.970 119.2 0.692 -4.1 0.013 -2.3 0.841 127.0 1.21 -3.1 14.4 2.5 0.958 102.0 0.604 -28.3 0.017 -18.9 0.843 112.5 1.28 -4.3 12.3 3.0 0.966 83.9 0.576 -52.1 0.021 -30.6 0.847 98.9 0.85 -4.7 14.3 3.5 0.979 64.2 0.580 -77.3 0.021 -47.0 0.858 85.3 0.40 -4.7 14.4 4.0 0.949 45.6 0.590 -106.7 0.025 -64.9 0.872 72.6 0.53 -4.5 13.7 4.5 0.927 24.2 0.642 -133.2 0.023 -82.0 0.866 57.2 0.83 -3.8 14.4 5.0 0.865 -0.2 0.757 -161.6 0.034 -110.7 0.853 41.6 0.83 -2.4 13.4 5.5 0.781 -28.9 0.955 165.9 0.040 -156.0 0.848 24.6 0.81 -0.4 13.7 6.0 0.644 -65.4 1.256 127.0 0.041 147.0 0.824 5.9 1.37 1.9 11.2 6.5 0.456 -118.8 1.686 82.5 0.040 81.4 0.779 -16.8 2.16 4.5 10.1 6.7 0.382 -149.5 1.883 62.4 0.043 56.0 0.747 -26.7 2.25 5.4 10.1 6.9 0.335 171.1 2.103 40.0 0.046 32.0 0.698 -38.0 2.28 6.4 10.2 7.1 0.331 129.4 2.268 17.0 0.049 3.6 0.651 -48.8 2.25 7.1 10.3 7.3 0.370 90.1 2.368 -7.1 0.052 -22.0 0.586 -61.5 2.24 7.4 10.2 7.5 0.416 55.7 2.412 -31.4 0.058 -46.3 0.519 -75.3 2.11 7.6 10.1 7.7 0.452 27.0 2.440 -55.1 0.064 -69.1 0.440 -91.6 2.03 7.7 10.0 7.9 0.470 0.1 2.408 -79.4 0.072 -95.9 0.355 -112.1 1.97 7.6 9.5 8.1 0.469 -25.8 2.375 -103.0 0.077 -120.6 0.272 -138.9 2.00 7.5 9.1 8.3 0.451 -51.7 2.307 -127.7 0.082 -144.7 0.199 -177.0 2.05 7.2 8.6 8.5 0.431 -77.8 2.140 -152.2 0.084 -169.9 0.170 132.2 2.21 6.6 7.8 8.7 0.424 -103.6 2.003 -174.2 0.082 170.0 0.176 86.9 2.42 6.0 7.2 typical small signal scattering parameters (t c = 25 c) nez7177-8d/8dl v ds = 10.0 v, i ds = 1600 ma frequency s 11 s 21 s 12 s 22 ks 21 mag 1 ghz mag ang mag ang mag ang mag ang (db) (db) mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 s 22 0.1 ghz 50 s 11 8.7 ghz s 11 0.1 ghz s 22 8.7 ghz +90 ? +60 ? +30 ? +120 ? +150 ? -150 ? -120 ? -90 ? -60 ? -30 ? 0 ? +180 ? s 21 0.1 ghz .10 .08 .04 s 21 10 6 4 8 2 s 12 0.1 ghz s 12 8.7 ghz s 21 8.7 ghz exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ? internet: http://www.cel.com 10/16/2000 data subject to change without notice
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