2008. 3. 26 1/3 semiconductor technical data ktc5027f triple diffused npn transistor revision no : 2 high voltage and high reliability high speed switching, wide soa maximum rating (ta=25 ) electrical characteristics (ta=25 ) note : h fe (1) classification r:15 30, o:20 40 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =800v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter sustaning voltage v cex(sus) i c =1.5a, i b1 =-i b2 =0.3a l=2mh, clamped 800 - - v collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =0.3a - - 2 v base-emitter saturation voltage v be(sat) i c =1.5a, i b =0.3a - - 1.5 v dc current gain h fe (1) (note) v ce =5v, i c =0.2a 15 - 40 h fe (2) v ce =5v, i c =1a 8 - - collector-base breakdown voltage bv cbo i c =1ma, i e =0 1100 - - v collector-emitter breakdown voltage bv ceo i c =5ma, r be = 800 - - v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 7 - - v collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 60 - pf transition frequency f t v ce =10v, i c =0.2a - 15 - mhz switching time turn on time t on i b1 200? b1 i cc v =400v i b2 i b2 20 s i =0.4a , i =-0.8a 1% b1 b2 output duty cycle input < = - - 0.5 s storage time t stg - - 3 fall time t f - - 0.3 characteristic symbol rating unit collector-base voltage v cbo 1100 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 7 v collector current dc i c 3 a pulse i cp 10 base current i b 1.5 a collector power dissipation (tc=25 ) p c 40 w junction temperature t j 150 storage temperature range t stg -55 150
2008. 3. 26 2/3 ktc5027f revision no : 2
2008. 3. 26 3/3 ktc5027f revision no : 2
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