? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant features ? broad bandwidth ? specified from 50 mhz to 20 ghz ? usable from 50 mhz to 26.5 ghz ? lower insertion loss and higher isolation than comparable phempt designs ? rugged fully monolithic, glass encapsulated chip with polymer protection coating ? up to +30dbm c.w. power handling @ +25c description the ma4sw110, ma4sw210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon pin diodes. they are designed for use as moderate signal, high performance switches in applications up to 26.5ghz. they provide performance levels superior to those realized by hybrid mic designs incorporating beam lead and pin chip diodes that require chip and wire assembly. these switches are fabricated using m/a-com?s patented hmic tm (heterolithic microwave integrated circuit) process, us pate nt 5,268,310. this process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between elements, this combination of silicon and glass gives hm ic devices low loss and high isolation performanc e through low millimeter frequencies. large bond pads facilitate t he use of low inductance ribbon leads, while gold bac kside metallization allows for manual or automatic chip bonding via 80/20 , ausn solder or conductive ag epoxy. absolute maximum ratings @ t a +25c parameter absolute maximum operating temperature -65 o c to +125 o c storage temperature -65 o c to +150 o c junction temperature +175 o c applied reverse voltage - 50v rf c.w. incident power +30dbm c.w. bias current +25c 20ma ma4sw110 max. operating conditions for a combination of rf power, d.c. bias and temperature: +30dbm cw @ 15ma (per diode) @+85c ma4sw210 MA4SW310
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant ma4sw110 (spst) electrical specifications @ t a = +25 o c, 20ma parameter frequency minimum nominal maximum units 6ghz - 0.4 0.7 db insertion loss 13ghz - 0.5 0.9 db 20ghz - 0.7 1.2 db 6ghz 46 55 - db isolation 13ghz 39 47 - db 20ghz 34 42 - db 6ghz 22 31 - db input return loss 13ghz 15 33 - db 20ghz 14 27 - db switching speed 1 - - 20 - ns voltage rating 2 - - - 50 v signal compression (500mw) 1ghz - 0.2 - db ma4sw210 (spdt) electrical specifications @ t a = +25 o c, 20ma parameter frequency minimum nominal maximum units 6ghz - 0.4 0.7 db insertion loss 13ghz - 0.5 1.0 db 20ghz - 0.7 1.2 db 6ghz 48 63 - db isolation 13ghz 40 50 - db 20ghz 34 42 - db 6ghz 20 27 - db input return loss 13ghz 18 25 - db 20ghz 15 25 - db switching speed 1 - - 20 - ns voltage rating 2 - - - 50 v signal compression (500mw) 1ghz - 0.2 - db parameter frequency minimum nominal maximum units 6ghz - 0.5 0.8 db insertion loss 13ghz - 0.7 1.1 db 20ghz - 0.9 1.5 db 6ghz 49 57 - db isolation 13ghz 42 48 - db 20ghz 33 42 - db 6ghz 20 24 - db input return loss 13ghz 14 22 - db 20ghz 11 21 - db switching speed 1 - - 20 - ns voltage rating 2 - - - 50 v signal compression (500mw) 1ghz - 0.2 - db MA4SW310 (sp3t) electrical specifications @ t a = +25 o c, 20ma 1.) typical switching speed measured from 10 % to 90 % of detected rf signal driven by ttl compatible drivers. 2.) maximum reverse leakage current in either the shunt or series pin diodes shall be 10a maximum at -50 volts. 1.) typical switching speed measured from 10 % to 90 % of detected rf signal driven by ttl compatible drivers. 2.) maximum reverse leakage current in either the shunt or series pin diodes shall be 10a maximum at -50 volts.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant typical performance curves at t a = +25c, 20ma bias current ma4sw110 return loss vs. frequency -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 frequency (ghz) loss (db) input return loss output return loss masw110 insertion loss vs. frequency -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 0 5 10 15 20 25 30 frequency (ghz) loss (db) ma4sw210 return loss vs. frequency -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 frequency (ghz) loss (db) input return loss output return loss ma4sw210 insertion loss vs. frequency -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 0 5 10 15 20 25 30 frequency (ghz) loss (db) MA4SW310 return loss vs. frequency -30 -25 -20 -15 -10 0 5 10 15 20 25 30 frequency (ghz) loss (db) input return loss output return loss MA4SW310 insertion loss vs. frequency -1.2 -1.1 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 0 5 10 15 20 25 30 frequency (ghz) loss (db) s-parameters: s-parameter data is available upon request.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant typical performance curves @ ta = +25c, 20ma bias current ma4sw110 isolation vs. frequency -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 frequency (ghz) isolation (db) input return loss vs. bias current @ 10 ghz -34 -32 -30 -28 -26 -24 -22 0 5 10 15 20 25 30 35 40 45 50 55 current (ma) loss (db) MA4SW310 ma4sw210 m a 4 s w110 MA4SW310 isolation vs. frequency -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 frequency (ghz) isolation (db) output return loss vs. bias current@ 10 ghz -25.5 -25 -24.5 -24 -23.5 -23 -22.5 -22 -21.5 0 5 10 15 20 25 30 35 40 45 50 55 current (ma) loss (db) MA4SW310 ma4sw210 m a 4 s w110 insertion loss vs. bias current @ 10 ghz -0.7 -0.65 -0.6 -0.55 -0.5 -0.45 -0.4 -0.35 0 5 10 15 20 25 30 35 40 45 50 55 current (ma) loss (db) MA4SW310 ma4sw210 ma4sw110 isolation vs. bias current @ 10 ghz -54 -53 -52 -51 -50 -49 -48 -47 -46 0 5 10 15 20 25 30 35 40 45 50 55 current (ma) isolation (db) MA4SW310 ma4sw210 m a 4 s w110 ma4sw210 isolation vs. frequency -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 frequency (ghz) isolation (db)
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant operation of the ma4sw series switches operation of the ma4sw series of pin switches is achieved by simultaneous application of a negative dc current to the low loss switching arm j1, j2, or j3, and a positive dc current to the remaining switching arms as shown in the bias connection circuits. dc return is achieved via j1. the control currents should be s upplied by constant current sources. the voltages at t hese points will not exceed + 1.5 volts (1.2 volts typical) at currents up to + 20ma. in the low loss state, the series diode must be forward biased and the shunt diode reverse biased. in the isolated arm, the shunt diode is forward biased and the series diode is reverse biased. driver connections ma4sw110 ma4sw210 MA4SW310 handling considerations cleanliness: these chips should be handled in a clean environment. . electro-static sensitivity: the ma4sw series pin diode switches are esd, class 1a sensitive (hbm). proper esd precautions should be taken. control level dc current @ condition of rf output j2 j1-j2 -20ma low loss +20ma isolation control level dc current @ condition of rf output condition of rf output j2 j3 j1-j2 j1-j3 -20ma +20ma low loss isolation +20ma -20ma isolation low loss control level dc current @ cond. of rf output cond. of rf output cond. of rf output j2 j3 j4 j1-j2 j1-j3 j1-j4 -20ma +20ma +20ma low loss isolation isolation +20ma -20ma +20ma isolation low loss isolation +20ma +20ma -20ma isolation isolation low loss ma4sw110 and bias connections 1 20nh 20nh 20pf 20pf 20pf 20pf 100 j2 bias rf output j2 j1 rf input switch chip ma4sw210 and bias connections 1 j1 rf input j2 bias j2 rf output j3 bias j3 rf output switch chip 20pf 20pf 20pf 20pf 20pf 20pf 20nh 20nh 20nh 100 MA4SW310 and bias connections 1 j2 bias j2 rf output j4 rf output j1 rf input j4 bias j3 bias j3 rf output 20pf 20pf 20 p f 20pf 20pf 20pf 20pf 20 p f 20nh 20nh 20nh 20nh 100 notes: 1. rlc values are for an operation frequency of 2-18ghz and bias current of 20ma per diode.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant wire bonding thermosonic wedge bonding using 0.003? x 0.00025? ribbon or 0.001? diameter gold wire is recommended. a heat stage temperature of 150 o c and a force of 18 to 22 grams should be used. if ultrasonic energy is necessary, it should be adjusted to the minimum leve l required to achieve a good bond. rf bond wires should be kept as short as possible. chip mounting the hmic switches have ti-pt-au back metal. they c an be die mounted with a gold-tin eutectic solder preform or conductive epoxy. mounti ng surface must be clean and flat. eutectic die attachment: an 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255 o c and a tool tip temperature of 265 o c. when hot gas is applied, the temperature at the chip should be 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 20 seconds. no more than three seconds should be required for attachment. solders rich in tin should not be used. epoxy die attachment: a minimum amount of epoxy, 1-2 mils thick, should be used to attach chip. a thin epoxy fillet should be visible around the outer perimeter of the chip after placement. cure epoxy per product instructions. typically 150c for 1 hour. ma4sw110 chip outline drawing 1 , 2 dim inches mm min. max. min. max. a 0.014 0.018 0.35 0.45 b 0.025 0.029 0.64 0.74 c 0.008 ref 0.20 ref d 0.004 0.006 0.10 0.15 e 0.004 ref 0.10 ref f 0.003 ref 0.08 ref g 0.003 ref 0.08 ref h 0.020 ref 0.52 ref notes: 1. topside and backside metallization is gold , 2.5m thick typical. 2. yellow areas indicate wire bonding pads
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant ma4sw210 chip outline drawing 1,2 dim inches mm min. max. min. max. a 0.029 0.033 0.73 0.83 b 0.004 0.006 0.10 0.15 c 0.004 ref 0.10 ref d 0.005 ref 0.13 ref e 0.009 ref 0.23 ref f 0.023 ref 0.58 ref g 0.007 ref 0.17 ref h 0.004 ref 0.10 ref notes: 1. topside and backside metallization is gold , 2.5m thick typical. 2. yellow areas indicate wire bonding pads
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v7 ma4sw110 ma4sw210 MA4SW310 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switches rohs compliant MA4SW310 chip outline drawing 1, 2 dim inches mm min. max. min. max. a 0.046 0.050 1.16 1.26 b 0.036 0.040 0.92 1.02 c 0.019 ref 0.48 ref d 0.014 ref 0.36 ref e 0.004 ref 0.10 ref f 0.005 ref 0.13 ref g 0.004 0.006 0.10 0.15 h 0.005 ref 0.12 ref j 0.004 ref 0.10 ref notes: 1. topside and backside metallization is gold , 2.5m thick typical. 2. yellow areas indicate wire bonding pads e
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