4/15/2000 v ces = 600v v ce(on) typ. = 2.21v @v ge = 15v, i c = 16a absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 28 i c @ t c = 100c continuous collector current 16 a i cm pulsed collector current 58 i lm clamped inductive load current 58 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 260 mj p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbfin (1.1nm) irg4pc30k short circuit rated ultrafast igbt
parameter typ. max. units r ??? 1.2 r ??? c/w r ??? 40 wt weight 6 (0.21) ??? g (oz) thermal resistance to-247ac e c g n-channel features features features features features high short circuit rating optimized for motor control, t sc =10s, @360v v ce (start), t j = 125 c, v ge = 15v combines low conduction losses with high switching speed latest generation design provides tighter parameter distribution and higher efficiency than previous generations as a freewheeling diode we recommend our hexfred tm ultrafast, ultrasoft recovery diodes for minimum emi / noise and switching losses in the diode and igbt latest generation 4 igbts offer highest power density motor controls possible this part replaces the irgpc30k and irgpc30m devices benefits www.irf.com 1
irg4pc30k 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 67 100 i c = 16a q ge gate - emitter charge (turn-on) ? 11 16 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) ? 25 37 v ge = 15v t d(on) turn-on delay time ? 26 ? t r rise time ? 28 ? t j = 25 c t d(off) turn-off delay time ? 130 200 i c = 16a, v cc = 480v t f fall time ? 120 170 v ge = 15v, r g = 23 ? ? 0.36 ? energy losses include "tail" e off turn-off switching loss ? 0.51 ? mj see fig. 9,10,14 e ts total switching loss ? 0.87 1.3 t sc short circuit withstand time 10 ?? s v cc = 400v, t j = 125 c v ge = 15v, r g = 23 ? ? 25 ? t j = 150 c, t r rise time ? 29 ? i c = 16a, v cc = 480v t d(off) turn-off delay time ? 190 ? v ge = 15v, r g = 23 ? ? 190 ? energy losses include "tail" e ts total switching loss ? 1.2 ? mj see fig. 11,14 e on turn-on switching loss ? 0.26 ? t j = 25 c , ? ? 0.36 ? i c = 14a, v cc = 480v e ts total switching loss ? 0.62 ? energy losses include "tail" l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 920 ? v ge = 0v c oes output capacitance ? 110 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 27 ?? = 1.0mhz switching characteristics @ t j = 25c (unless otherwise specified) ns ns parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ?? vv ge = 0v, i c = 1.0a v (br)ces / t j temperature coeff. of breakdown voltage ? 0.54 ? v/ cv ge = 0v, i c = 1.0ma ? 2.21 ? i c = 14a ? 2.21 2.7 i c = 16a v ge = 15v ? 2.88 ? i c = 28a see fig.2, 5 ? 2.36 ? i c = 16a , t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a v ge(th) / t j temperature coeff. of threshold voltage ? -12 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 5.4 8.1 ? sv ce = ?? 250 v ge = 0v, v ce = 600v i ces zero gate voltage collector current ?? 2.0 a v ge = 0v, v ce = 10v, t j = 25 c ?? 1100 v ge = 0v, v ce = 600v, t j = 150 c i ges gate-to-emitter leakage current ?? 100 n a v ge = 20v electrical characteristics @ t j = 25 c (unless otherwise specified) v v ce(on) collector-to-emitter saturation voltage details of note through are on the last page
irg4pc30k www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 1 10 v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 10 15 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o load current ( a ) 0 5 10 15 20 25 30 35 40 0.1 1 10 100 f, fre q uenc y ( khz ) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125 c t = 90 c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = 24w
irg4pc30k 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 8 c i = a 16 c i = a 32 c 8.0a t j , junction temperature ( c )
irg4pc30k www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 16a cc c 0 10 20 30 40 50 0.5 1.0 1.5 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 16a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 32 c i = a 16 c i = a 8 c ? ?
irg4pc30k 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 0 8 16 24 32 40 0.0 0.8 1.6 2.4 3.2 4.0 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 23 ?
irg4pc30k www.irf.com 7 480v 4 x i c @ 25 c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
irg4pc30k 8 www.irf.com case outline and dimensions ? to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac ( to-3p ) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 c o n fo r m s to je d e c o u tlin e to-247ac. lead assignments 1 - g a t e 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r * longer leaded ( 20m m ) version available ( to-247ad ) to order add "-e" suffix to part number repetitive rating; pulse width limited by maximum junction temperature. pulse width pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 ?
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