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| www.irf.com 1 automotive grade features advanced planar technology low on-resistance dual p channel mosfet dynamic dv/dt rating logic level 150c operating temperature fast switching lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an ex- tremely efficient and reliable device for use in auto- motive and a wide variety of other applications. so-8 AUIRF7304Q d1 d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t a = 25c 10 sec. pulsed drain current, v gs @ -4.5v i d @ t a = 25c continuous drain current, v gs @ -4.5v a i d @ t a = 70c continuous drain current, v gs @ -4.5v i dm pulsed drain current p d @t a = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 62.5 c/w max. -4.7 -4.3 -17 -3.4 -55 to + 150 2.0 0.016 -5.0 12 v (br)dss -20v r ds(on) max. 0.090 i d -4.3a www.irf.com 2 !" # i sd $% %&' ? (&)'* * ' + (,- pulse width 300 s; duty cycle 2%. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -20 ??? ??? v . 0.01 0.00 0.10 0.0 1. .0 1.0 100 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 22 q gs gate-to-source charge ??? ??? 3.3 q gd gate-to-drain ("miller") charge ??? ??? 9.0 t d(on) turn-on delay time ??? 8.4 ??? t r rise time ??? 26 ??? t d(off) turn-off delay time ??? 51 ??? t f fall time ??? 33 ??? l d internal drain inductance ??? 4.0 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 6.0 ??? from package and center of die contact c iss input capacitance ??? 610 ??? c oss output capacitance ??? 310 ??? c rss reverse transfer capacitance ??? 170 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.0 v t rr reverse recovery time ??? 56 84 ns t j = 25c,i f = -2.2a q rr reverse recovery charge ??? 71 110 nc di/dt = 100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) -17 ??? ??? ??? ??? -2.5 i d = -2.2a r g = 6.0 . , . 10 v gs = 0v v ds = -15v ? = 1.0mhz, see fig. 5 na a v ds = -16v, v gs = 0v v ds = -16v, v gs = 0v, t j = 125c v gs = -4.5v, see fig. 6 & 12 v gs = 12v v ds = -16v v dd = -10v a pf ns nc t j = 25c, i s = -1.8a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -2.2a r ds(on) static drain-to-source on-resistance v gs = -2.7v, i d = -1.8a v ds = v gs , i d = -250 a conditions v ds = -16v, i d = -2.2a i d = -2.2a v gs = -12v starting t j = 25c, r g = 25 , i as = -2.2a. when mounted on 1 inch square copper board, t<10 sec. www.irf.com 3 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20 s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -3.6a d v = -4.5v gs www.irf.com 4 ! "# !$ ! % ! % ! 0 500 1000 1500 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 g gs a for test circuit see figure 12 -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.2a v = -16v d ds 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms www.irf.com 5 + - ! v ds 90% 10% v gs t d(on) t r t d(off) t f * $ ( * 1 0.1 % "# $& !'( * * . / + "# ) ( * +, $& 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d www.irf.com 6 - % !'( % ! q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ./ www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - * ? ? 0 . 1 2.2 ? . / + $. / + - 3 - ? 3 ! 0 ? 4 5 ? 3 360 - + " 0 5 " 5$- 77/5$-. " 5$-8 0 * 7 00 12 000 * 9( *" 3 3 :*. . 3 4)5 ) www.irf.com 8 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking ! " ! # $$ ! %& % % !% ! ' f7304q www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) www.irf.com 10 ordering information base part number package type standard pack complete part number form quantity AUIRF7304Q so-8 tube 95 AUIRF7304Q tape and reel 2500 AUIRF7304Qtr www.irf.com 11 unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 |
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