microwave corporation 8 - 274 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 sige hbt gain block mmic amplifier, dc - 5.0 ghz v00.0204 general description functional diagram the hmc479st89 is a sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli er covering dc to 5 ghz. packaged in an industry standard sot89, the ampli er can be used as a cascadable 50 ohm rf/if gain stage as well as a lo or pa driver with up to +20 dbm output power. the hmc479st89 offers 15 db of gain with a +33 dbm output ip3 at 850 mhz while requiring only 75 ma from a single positive supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +18 dbm gain: 15 db output ip3: +33 dbm cascadable 50 ohm i/os single supply: +5v to +12v industry standard sot89 package typical applications the hmc479st89 is an ideal rf/if gain block & lo or pa driver: ?cellular / pcs / 3g ?fixed wireless & wlan ?catv, cable modem & dbs ?microwave radio & test equipment electrical speci cations, vs= 8.0 v, rbias= 51 ohm, t a = +25?c note: data taken with broadband bias tee on device output. parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 12.5 11.5 10.5 9.5 8.5 15 13.5 12.5 11.5 10.5 db db db db db gain variation over temperature dc - 5.0 ghz 0.008 0.012 db/ ? input return loss dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 5.0 ghz 12 16 18 22 db db db db output return loss dc - 1.0 ghz 1.0 - 5.0 ghz 20 22 db db reverse isolation dc - 5.0 ghz 18 db output power for 1 db compression (p1db) 0.5 - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 15 13 11 10 8 18 16 14 13 11 dbm dbm dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 1.0 ghz 1.0 - 2.5 ghz 2.5 - 4.0 ghz 4.0 - 5.0 ghz 33 30 25 23 dbm dbm dbm dbm noise figure dc - 3.0 ghz 3.0 - 5.0 ghz 4.0 4.5 db db supply current (icq) 75 ma features
microwave corporation 8 - 275 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 output return loss vs. temperature v00.0204 broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature sige hbt gain block mmic amplifier, dc - 5.0 ghz noise figure vs. temperature -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 012345678 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 0123456 +25c +85c -40c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c input return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c output return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 123456 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0123456 +25c +85c -40c noise figure (db) frequency (ghz)
microwave corporation 8 - 276 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz gain, power & oip3 vs. supply voltage for constant icc= 72 ma @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature vcc vs. icc over temperature for fixed vs= 8v, r bias = 51 ohms 0 2 4 6 8 10 12 14 16 18 20 22 0123456 +25c +85c -40c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 0123456 +25c +85c -40c psat (dbm) frequency (ghz) 15 20 25 30 35 40 0123456 +25c +85c -40c oip3 (dbm) frequency (ghz) 66 68 70 72 74 76 78 80 82 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 icc (ma) vcc (vdc) +85c +25c -40c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 56789101112 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs ( vdc )
microwave corporation 8 - 277 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc rf input power (rfin)(vcc = +4.2 vdc) +17 dbm junction temperature 150 ? continuous pdiss (t = 85 ?) (derate 14.76 mw/? above 85 ?) 0.960 w thermal resistance (junction to lead) 67.6 ?/w storage temperature -65 to +150 ? operating temperature -40 to +85 ? notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. leadframe material: copper alloy 3. leadframe plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. all ground leads must be soldered to pcb rf ground. 7. the micro-p package is dimensionally compatable with the ?icro-x package
microwave corporation 8 - 278 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz application circuit pin descriptions pin number function description interface schematic 1 rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 3 rfout rf output and dc bias (vcc) for the output stage. 2, 4 gnd these pins and package bottom must be connected to rf/dc ground. recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 5000 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 6.8 nh c1, c2 0.01 ? 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 75 ma, rbias= (vs - vcc) / icc supply voltage (vs) 5v 6v 8v 10v 12v r bias v alue 13 ? 27 ? 51 ? 82 ? 110 ? r bias p ower r ating 1/8 w 1/4 w 1/2 w 1/2 w 1 w
microwave corporation 8 - 279 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc479st89 v00.0204 sige hbt gain block mmic amplifier, dc - 5.0 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108323* item description j1 - j2 pc mount sma connector j3 - j4 dc pin c1, c2 capacitor, 0402 pkg. c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 ? capacitor, tantalum r1 resistor, 1210 pkg. l1 inductor, 0603 pkg. u1 hmc479st89 pcb** 107368 evaluation pcb ** circuit board material: rogers 4350 * reference this number when ordering complete evaluation pcb.
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