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WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 1 !" datasheet preliminary datasheet (device : WS1213, 4x4 japan cdma pam) issued date : december 9 , 2004 s. w. paek director, module group
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 2 !" product description power amplifier module for j-cdma(887-925mhz) the WS1213 is a cdma(code division multiple access) power amplifier module designed for handsets operating in the 887-925mhz bandwidth. the WS1213 is manufactured on an advanced ingap hbt (hetero-junction bipolar transistor) mmic(microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. the WS1213 meets stringent cdma linearity requirements to and beyond 27.5dbm output power. the 4mmx4mm form factor 10-pin surface mount package is self contained, incorporating 50ohm input and output matching networks. general features - 3.0um ingap hbt technology - good linearity - high efficiency - 10-pin surface mounting package(4mmx4mmx1.4mm) - 50ohm input and output matching - cdma 95a/b, cdma2000-1x/evdo applications - digital cellular(j-cdma) functional block diagram output match input match inter stage match da pa bias circuit & control logic rf input (4) rf output (8) vcc1(5) vcc2(6) vref(1) vcont(2) module mmic vbias (3)
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 3 !" electrical specifications table 1. absolute maximum ratings parameter symbol minimum nominal maximum unit rf input power pin - - 10.0 dbm dc supply voltage vcc - 3.4 6.0 v dc reference voltage vref - 2.85 3.3 v case operating temperature tc -30 25 +110 o c storage temperature tstg -55 - +125 o c table 2. recommended operating conditions parameter symbol minimum nominal maximum unit dc supply voltage vcc 3.2 3.4 4.2 v bias supply voltage vbias 2.75 2.85 4.2 v operating frequency fo 887 - 925 mhz case operating temperature to -30 - 85 o c mode control voltage - high power mode - low power mode vcont vcont - - 0 2.85 - - v v table 3. power range truth table power mode symbol high power *2 pr2 low power *2 pr1 shut down *3 - vref vcont *1 range 2.85 low 16dbm ? 27.5dbm 2.85 high < 16dbm 0 - - *1 high(2.0v ? 3.0v), low(0.0v ? 0.5v) *2 to change between high power mode and low power mode, switch vcont accordingly *3 in order to shut down the module, turn off vref accordingly dc reference voltage vref 2.75 2.85 2.95 v
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 4 !" table 4. electrical characteristics for cdma (vcc=3.4v, vref=2.85v) electrical specifications ma 5 pout=16dbm iref1 dbm/hz -135 pout=27.5dbm rxbn rx band noise power dbc -52 pout=16dbm acpr1 low 885khz offset adjacent channel power 1 *1 dbc -62 acpr2 low 1.98mhz offset dbc -52 pout=27.5dbm acpr1 high 885khz offset adjacent channel power 2 *1 dbc -61 acpr2 high 1.98mhz offset vswr 10:1 no damage ru ruggedness dbc -60 vswr 6:1 s stability (spurious output) 2.5:1 2:1 vswr input vswr dbc -55 3f0 third dbc -35 2f0 second harmonic suppression ua 5 0.5 vcc=3.4 vref=0 ipd total supply current in power-down mode ma 0.15 pout=16dbm icont control current ma 3 pout=27.5dbm iref2 reference current ma 90 high power mode iq2 ma 14 low power mode iq1 quiescent current 1 ma 420 pout=27.5dbm icc2 ma 65 pout=16dbm icc1 total supply current % 39 pout=27.5dbm pae2 % 18 pout=16dbm pae1 power added efficiency db 28 25 pout=27.5dbm g2 db 18 15 pout=16dbm g1 gain unit max typ min condition symbol characteristics *1 adjacent channel power is measured using is-95 modulated input signal
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 5 !" figure 1. evaluation board schematic evaluation board description 1 vref 2 vcont 3 vbias 4 rf in 5 vcc1 gnd 10 gnd 9 rf out 8 gnd 7 vcc2 6 vref vcont rf in vcc1 vcc2 rf out 2.2uf 220pf figure 2. evaluation board assembly diagram 2.2uf 220pf 100pf 220pf 2.2uf 10kohm wavics WS1213 wpywwd 100pf vcc2 vcc1 gnd vbias vref vcont gnd gnd rfin rfout vbias
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 6 !" figure 1. package dimensional drawing and pin descriptions package dimensions and pin descriptions 5 2 3 4 10 6 9 8 7 x-ray top view 4 0.05 4 0.05 pin 1 mark 1.4 0.1 0.48 side view all dimensions are in millimeters pin descriptions pin # 1 2 3 4 5 6 7 8 9 10 name vref vcont vbias rf in vcc1 vcc2 gnd rf out gnd gnd description reference voltage control voltage bias supply rf input supply voltage supply voltage ground rf output ground ground 1.0 1.9 1.9 0.85 1.7 bottom view 0.4 0.4 0.85 0.3 0.5 0.6 0.5
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 7 !" figure 2. marking specification package dimensions and pin descriptions pin 1 mark wavics WS1213 wpyyww manufacturing part number lot number wp manufacturing site yy manufacturing year ww work week package sealed ex) w20425 assembled by ase korea at 25 th work week in 2004
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 8 !" tape and reel information figure 1. tape and reel format ? 4mm x 4mm figure 1. tape and reel format ? 4mm x 4mm all dimensions are in millimeters notes 1. package type : 4mm x 4mm 2. tape width : 12mm 3. pocket pitch : 8mm 4. pocket depth : 1.6mm 5. reel capacity : 2500ea 6. max reel dia : 13?
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 9 !" tape and reel information figure 2. plastic reel format ? 13?/4? 12.4 g 12 size mark(xx) 12.00mm tape width +2.00 -0.00 all dimensions are in millimeters detail of pin hole
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 10 !" handling and storage 1. esd (electrostatic discharge) electrostatic discharge occurs naturally in the environment. with the increase in voltage potential, the outlet of neutralization or discharge will be sought. if the acquired discharge route is through a semiconductor device, destructive damage will result. esd countermeasure methods should be developed and used to control potential esd damage during handling in a factory environment at each manufacturing site. note : module products should be considered extremely esd sensitive table 1. esd classification pin # 1 2 3 4 5 6 7 8 9 10 name vref vcont vbias rf in vcc1 vcc2 gnd rf out gnd gnd hbm +/- 2000v cdm / mm +/- 200v classification class 2 description reference voltage control voltage bias supply rf input supply voltage supply voltage ground rf output ground ground
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 11 !" 2. msl (moisture sensitivity level) plastic encapsulated surface mount package is sensitive to damage induced by absorbed moisture and temperature. wavics follows jedec standard j-std 020b. each component and package type is classified for moisture sensitivity by soaking a known dry package at various temperatures and relative humidity, and times. after soak, the components are subjected to three consecutive simulated reflows. the out of bag exposure time maximum limits are determined by the classification test describe above which corresponds to a msl classification level 6 to 1 according to the jedec standard ipc/jedec j-std-020b and j-std-033. WS1213 is msl3. thus, according to the j-std-033 p.11 the maximum manufacturers exposure time (met) for this part is 168 hours. after this time period, the part would need to be removed from the reel, de-taped and then re-bake. mandatory bake before use. after bake, must be reflowed within the time limit specified on the label 6 24 hours 5a 48 hours 5 72 hours 4 168 hours 3 4 weeks 2a 1 year 2 unlimited at =< 30 o c/85% rh 1 floor life (out of bag) at factory ambient =< 30 o c/60% rh or as stated msl level table 2. moisture classification level and floor life note: the msl level is marked on the msl label on each shipping bag. msl classification reflow temperature for the WS1213 is targeted at 250 o c +0/-5 o c. figure 1 and table 3 show typical smt profile for maximum temperature of 250 o c. handling and storage
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 12 !" figure 1. typical smt reflow profile for maximum temperature = 250 +0/-5 o c table 3. typical smt reflow profile for maximum temperature = 250 +0/-5 o c handling and storage profile feature sn-pb solder average ramp-up rate (t l to t p ) 3 o c/sec max preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 o c 150 o c 60-120 sec tsmax to t l - ramp-up rate time maintained above: - temperature (t l ) -time (t l ) 183 o c 60-150 sec peak temperature (tp) 225 +0/-5 o c time within 5 o c of actual peak temperature (tp) 10-30 sec ramp-down rate 6 o c/sec max time 25 o c to peak temperature 6 min max. pb-free solder 3 o c/sec max 100 o c 150 o c 60-180 sec 3 o c/sec max 217 o c 60-150 sec 250 +0/-5 o c 10-30 sec 6 o c/sec max 8 min max.
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 13 !" 3. storage conditions packages described in this document must be stored in sealed moisture barrier, anti-static bags. shelf life in a sealed moisture barrier bag is 12 months at <40 o c and 90% relative humidity (rh) j-std-033 p.7. 3-1. out-of-bag time duration after unpacking the device must be soldered to the pcb within 168 hours as listed in the j-std-020b p.11 with factory conditions <30 o c and 60% rh. 3-2. baking it is not necessary to re-bake the part if both conditions( storage conditions and out-of-bag condition ) have been satisfied. baking must be done if at least one of the conditions above have not been satisfied. the baking conditions are 125 o c for 24 hours j-std-033 p.8. caution: tape and reel materials typically cannot be baked at the temperature described above. if out-of-bag exposure time is exceeded, parts must be baked for a longer time at low temperatures, or the parts must be re-reeled, de-taped, re-baked and then put back on tape and reel. (see moisture sensitive warning label on each shipping bag for information of baking) 4. board rework 4-1. component removal, rework and remount if a component is to be removed from the board, it is recommended that localized heating be used and the maximum body temperatures of any surface mount component on the board not exceed 200 c. this method will minimize moisture related component damage. if any component temperature exceeds 200 c, the board must be baked dry per 4-2 prior to rework and/or component removal. component temperatures shall be measured at the top center of the package body. any smd packages that have not exceeded their floor life can be exposed to a maximum body temperature as high as their specified maximum reflow temperature. 4-1-1. removal for failure analysis not following the requirements of 4-1 may cause moisture/reflow damage that could hinder or completely prevent the determination of the original failure mechanism. handling and storage
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 14 !" 4-1-2. baking of populated boards some smd packages and board materials are not able to withstand long duration bakes at 125 c. examples of this are some fr-4 materials, which cannot withstand a 24 hr bake at 125 c. batteries and electrolytic capacitors are also temperature sensitive. with component and board temperature restrictions in mind, choose a bake temperature from table 4-1 in j-std 033; then determine the appropriate bake duration based on the component to be removed. for additional considerations see ipc-7711 and ipc-7721. 4. derating due to factory environmental conditions factory floor life exposures for smd packages removed from the dry bags will be a function of the ambient environmental conditions. a safe, yet conservative, handling approach is to expose the smd packages only up to the maximum time limits for each moisture sensitivity level as shown in table 2. this approach, however, does not work if the factory humidity or temperature are greater than the testing conditions of 30 c/60% rh. a solution for addressing this problem is to derate the exposure times based on the knowledge of moisture diffusion in the component packaging materials (ref. jesd22-a120). recommended equivalent total floor life exposures can be estimated for a range of humidity?s and temperatures based on the nominal plastic thickness for each device. table 4 lists equivalent derated floor lives for humidity?s ranging from 20-90% rh for three temperatures, 20 c, 25 c, and 30 c. this table is applicable to smds molded with novolac, biphenyl or multifunctional epoxy mold compounds. the following assumptions were used in calculating table 4: 1. activation energy for diffusion = 0.35ev (smallest known value). 2. for 60% rh, use diffusivity = 0.121exp (- 0.35ev/kt) mm2/s (this uses smallest known diffusivity @ 30 c). 3. for >60% rh, use diffusivity = 1.320exp (- 0.35ev/kt) mm2/s (this uses largest known diffusivity @ 30 c). handling and storage
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 15 !" handling and storage table 4. recommended equivalent total floor life (days) @ 20c, 25c & 30c for ics with novolac, biphenyl and multifunctional epoxies (reflow at same temperature at which the component was classified)
WS1213 wm-0410-02 preliminary information power amplifier module for j-cdma(887-925mhz) 16 !" general information wavics 5f emerald bldg, 1362-29 seocho-dong, seocho-gu seoul, korea 137-863 tel : +82-2-3474-7733 fax : +82-2-3474-6815 url : http://www.wavics.com email : marketing@wavics.com important notice wavics co., ltd. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifications contained in advanced product information sheets and preliminary data sheets are assumed to be reliable; however, wavics assumes no responsibilities for inaccuracies. wavics strongly urges customers to verify that the information they are using is current before placing orders.

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