control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 1 MAMF-000002-DIE000 rev b preliminary datasheet primary applications ? radar systems ? commercial avionics features ? highly integrated mmic ? dual path, transmit/receive operation ? 6-bit phase shifter and 6-bit attenuator ? tx gain = 21 db; rx gain = 15 db ? serial control data input ? 50 ? input and output impedance ? proven manufacturability and reliability ? no airbridges ? polyimide scratch protection ? no hydrogen poisoning susceptibility description parameter symbol absolute maximum units tx input power tx p in 8 dbm rx input power rx p in 11 dbm drain supply voltage v dd 12 v gate supply voltage v gg -6.0 v quiescent drain current (no rf) i dq 500 ma quiescent dc power dissipated (no rf) p diss 2.5 w logic supply voltage v ee -6.0 v junction temperature t j 170 c storage temperature t stg -55 to +150 c the MAMF-000002-DIE000 is a 3-port, dual path transmit/ receive control mmic. the on-chip serial-to-parallel converter enables the independent control of the 6-bit phase shifter and 6-bit attenuator and minimizes the required inputs. this product is fully matched to 50 ohms on both the input and output. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag) process, each device is 100% rf tested on-wafer to ensure performance compliance. m/a-com?s msag process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple im- plant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protection for ease of use with auto- mated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. maximum operating conditions 1 1. operation beyond these limits may result in permanent damage to the part.
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 2 MAMF-000002-DIE000 rev b preliminary datasheet 4. t b = mmic base temperature parameter symbol typical units bandwidth f 7.0-12.0 ghz transmit gain gn 21 db receive gain gn 15 db input vswr, common port, vswr 1.5:1 output vswr, tx out port, vswr 1.7:1 input vswr, rx in port, re- vswr 1.7:1 transmit p1db p1db 22 dbm receive p1db p1db 19 dbm receive noise figure nf 10.5 db attenuator range (6 bits, 64 0 to 31.5 db 8 db bit, relati ve gain -8.0 db gate supply current i gg 10 ma drain supply current i dd 340 ma logic supply current i ee 50 ma 16 db bit, relative gain, msb -16.0 db phase shifter range (6 bits, 0 to 354 o 5.6 o bit, relative phase, lsb -5.6 o 11.2o bit, relative phase -11.2 o 0.5 db bit, relative gain, lsb -0.5 db 1 db bit, relati ve gain -1.0 db 2 db bit, relati ve gain -2.0 db 4 db bit, relati ve gain -4.0 db 22.5o bit, relative phase -22.5 o 45o bit, relative phase -45 o 90o bit, relative phase -90 o 180o bit, relative phase, msb -180 o receive third order intercept, otoi 26 dbm output vswr, common port, vswr 1.4:1 electrical characteristics: t b = 25c 4 , z 0 = 50 ? , v d = 5v, v g = -5v, v ee = -5v characteristic symbol min typ max unit drain supply voltage v dd 4.8 5.0 5.2 v gate supply voltage v gg -5.2 -5.0 -4.8 v digital supply voltage v ee -5.2 -5.0 -4.8 v input logic high voltage v ih 3.0 5.0 5.0 v input logic low voltage v il 0.0 0.0 0.4 v clock frequency f clk 20 mhz thermal resistance jc 28.4 c/w mmic base temperature t b note 3 oc recommended operating conditions 2 2. operation outside of these ranges may reduce product reliability. 3. maximum mmic base temperature = 170c? jc * v dd * i dq
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 3 MAMF-000002-DIE000 rev b preliminary datasheet figure 1. transmit s-parameters figure 2. receive s-parameters figure 3. receive output toi figure 4. transmit and receive p1db 20 22 24 26 28 30 32 34 36 38 40 7 8 9 10 11 12 frequency (ghz) to i (dbm) 5 7 9 11 13 15 17 19 21 23 25 7 8 9 10 11 12 frequency (ghz) gain (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 vswr () gain input vswr out p ut vswr 5 7 9 11 13 15 17 19 21 23 25 789101112 frequency (ghz) gain (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 vswr () gain input vswr out p ut vswr figure 5. relative gain of major attenuator states figure 6. relative phase of major phase shifter states -40 -35 -30 -25 -20 -15 -10 -5 0 5 7 8 9 10 11 12 frequency (ghz) relative gain (deg) .5 deg bit 1 deg bit 2 deg bit 4 deg bit 8 deg bit 16 deg bit all bits -400 -360 -320 -280 -240 -200 -160 -120 -80 -40 0 40 789101112 frequency (ghz) relative phase (deg) 5.6deg bit 11deg bit 22deg bit 45deg bit 90deg bit 180deg bit all bits 10 12 14 16 18 20 22 24 26 28 30 32 34 36 7 8 9 10 11 12 frequency (ghz) p1db (dbm) tx p1db rx p1db
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 4 MAMF-000002-DIE000 rev b preliminary datasheet figure 7. block diagram of transmit / receive control mmic truth table and data sequence x-band t/r mmic control function input signal logic level f unction ck (clock) falling edge shifts the data, di di (data in) high/low phase and attn setting ld (load) falling edge loads the data from d24 shift register sl and tr (select & t/r control) low selects odd bits (transmit) and transmit path sl and tr (select & t/r control) high selects even bits (receive) and receive path logic level logic high logic 1: 3.0 to 5v logic low logic 0: 0 to 0.4v logic low phase and attn in ref. state logic high phase and attn shift negative lsb data enters first and msb enters last. lsb data travels all 24 shift registers. attn and phase states serial-to-parallel converter i/os input data to spc tr ?low? ? tx tr ?high? ? rx phase and attn input data to spc tr ?low? ? tx tr ?high? ? rx phase and attn d1-lsb transmit 5.6o-bit ps d13 transmit 0.5 db-bit attn d2 receive d13 receive d3 transmit 11 o-bit ps d15 transmit 1 db-bit attn d4 receive d16 receive d5 transmit 22 o-bit ps d17 transmit 2 db-bit attn d6 receive d18 receive d7 transmit 45 o-bit ps d19 transmit 4 db-bit attn d8 receive d20 receive d9 transmit 90 o-bit ps d21 transmit 8 db-bit attn d10 receive d22 receive d11 transmit 180 o-bit ps d23 transmit 16 db-bit attn d12 receive d24 receive
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 5 MAMF-000002-DIE000 rev b preliminary datasheet figure 9. timing diagram, transmit/receive relationship 0 1 2 3 4 5 0 10000 voltage (v) clock data load sl tr transmit receive receive figure 8. timing diagram, data sequence 0 1 2 3 4 5 0 400 800 1200 1600 2000 time (ns) voltage (v) clock data load sl tr d1, d2: 5.6obit tx&rx d23, d24: 16 db bit, tx&rx
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 6 MAMF-000002-DIE000 rev b preliminary datasheet figure 10 . die layout pad type nominal voltage size ( m) (mils) common, tx out, rx in rf n/a 150 x 150 6 x 6 t/r, sel, load, data, clock control 0 / 5 v 125 x 125 5 x 5 v dd dc 5.0 v 150 x 150 6 x 6 v ee dc -5.0 v 125 x 125 5 x 5 v g ?hi, v g ?n, v g ?lo dc -5.0 v 150 x 150 6 x 6 bond pad information mechanical information chip size: 6.0 x 4.0 x 0.075 mm ( 236 x 157 x 3 mils)
control chip, x-band t/r 7.0?12.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 7 MAMF-000002-DIE000 rev b preliminary datasheet figure 11. recommended bonding diagram . support circuitry typical of mmic characterization fixture for cw testing. assembly and bonding diagram assembly instructions: die attach: use ausn (80/20) 1 mil. preform solder. limit time @ 300 c to less than 5 minutes. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad connections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shortest length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -5 v, v ee = -5v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 5 v. 3. adjust v gg to set i dq . 4. set rf input. 5. power down in reverse. turn v gg off last. 100 pf rx in tx out dat a 5 0.1 f v dd 100 pf v gg v ee 0.1 f 0.1 f common
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