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  tc1107 tc1107-1 9/14/99 telcom semiconductor reserves the right to make changes in the circuitry and specific ations of its devices. evaluation kit available 300ma cmos ldo with shutdown and v ref bypass general description the tc1107 is a fixed output, high accuracy (typically 0.5%) cmos upgrade for older (bipolar) low dropout regulators. total supply current is typically 50 m a at full load (20 to 60 times lower than in bipolar regulators !). tc1107 key features include ultra low noise operation (plus optional bypass input); very low dropout voltage (typically 240mv at full load), and fast response to step changes in load. supply current is reduced to 0.05 m a (typical) and v out falls to zero when the shutdown input is low. the tc1107 incorporates both over-temperature and over-current protection. the tc1107 is stable with an output capacitor of only 1 m f and has a maximum output current of 300ma. features n zero ground current for longer battery life! n very low dropout voltage n guaranteed 300ma output n high output voltage accuracy n standard or custom output voltages n power-saving shutdown mode n bypass input for ultra-quiet operation n over-current and over-temperature protection n space-saving msop package option applications n battery-operated systems n portable computers n medical instruments n instrumentation n cellular / gsm / phs phones n linear post-regulator for smps n pagers typical application pin configurations tc1107 1 2 3 4 5 6 7 8 v out v out c bypass 470pf (optional) shutdown control (from power control logic) c1 1 f gnd nc bypass v in v in nc nc shdn 8-pin soic 1 2 3 4 v in 5 6 7 8 nc shdn v out gnd nc bypass nc 8-pin msop 1 2 3 4 v in 5 6 7 8 nc shdn v out gnd nc bypass nc tc1107- voa tc1107- vua ordering information part junction number package temp. range tc1107-xxvoa 8-pin soic C 40 c to +125 c tc1107-xxvua 8-pin msop C 40 c to +125 c tc1015ev evaluation kit for cmos ldo family available output voltages: 2.5, 2.8, 3.0, 3.3, 5.0 xx indicates output voltages other output voltages are available. please contact telcom semiconductor for details.
2 tc1107 300ma cmos ldo with shutdown and v ref bypass tc1107-1 9/14/99 electrical characteristics: v in = v out + 1v, i l = 0.1 m a, c l = 3.3 m f, shdn > v ih , t a = 25 c, unless other- wise noted. boldface type specifications apply for junction temperatures of C 40 c to +125 c. symbol parameter test conditions min typ max units v in input operating voltage 6.5 v i out max maximum output current 300 ma v out output voltage note 1 v r 0.5% v v r C 2.5% v r + 2.5% d v out / d tv out temperature coefficient note 2 40 ppm/ c d v out / d v in line regulation (v r + 1v) < v in < 6v 0.05 0.35 % d v out /v out load regulation i l = 0.1ma to i out max 0.5 2.0 % v in C v out dropout voltage i l = 0.1ma 20 30 mv i l = 100ma 80 160 i l = 300ma 240 480 (note 4) i ss1 supply current shdn = v ih 50 90 m a i ss2 shutdown supply current shdn = 0v 0.05 0.5 m a psrr power supply rejection ratio f re 1khz 60 db i out sc output short circuit current v out = 0v 550 650 ma d v out / d p d thermal regulation note 5 0.04 %/w en output noise f = 1khz, c out = 1 m f, 260 nv/ ? hz r load = 50 w shdn input v ih shdn input high threshold 45 %v in v il shdn input low threshold 15 %v in notes: 1. v r is the regulator output voltage setting. 2. t c v out = (v out max C v out min ) x 10 6 v out x d t 3. regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested over a load range from 0.1ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the t hermal regulation specification. 4. dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value m easured at a 1v differential. 5. thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, exc luding load or line regulation effects. specifications are for a current pulse equal to i lmax at v in = 6v for t = 10msec. 6. the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the thermal resistance from junction-to-air (i.e. t a , t j , q ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see thermal considerations section of this data sheet for more details. absolute maximum ratings* input voltage .................................................................7v output voltage ........................... (v ss C 0.3) to (v in + 0.3) power dissipation .................... internally limited (note 6) operating temperature .................... C 40 c < t j < 125 c storage temperature ............................ C 65 c to +150 c damage may occur. device operation beyond the limits listed in electrical characteristics is not recommended. maximum voltage on any pin ........... v in + 0.3v to C 0.3v lead temperature (soldering, 10 sec.) ................ +300 c *absolute maximum ratings indicate device operation limits beyond
3 300ma cmos ldo with shutdown and v ref bypass tc1107 tc1107-1 9/14/99 detailed description the tc1107 is a precision regulator available in fixed voltages. unlike the bipolar regulators, the tc1107 supply current does not increase with load current. in addition, v out remains stable and within regulation at very low load cur- rents (an important consideration in rtc and cmos ram battery backup applications). tc1107 pin functions are detailed below: pin description pin no. symbol description 1v out regulated voltage output 2 gnd ground terminal 3 nc no connect 4 bypass reference bypass input. connecting a 470pf to this input further reduces output noise. 5 shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shut- down when a logic low is applied to this input. during shutdown, output voltage falls to zero and supply current is reduced to under 1 microamp (typical). 6 nc no connect 7 nc no connect 8v in unregulated supply input figure 1 shows a typical application circuit. the regula- tor is enabled any time the shutdown input (shdn) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 m a (typical), v out falls to zero. bypass input a 470pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. output capacitor a 1 m f (min) capacitor from v out to ground is recom- mended. the output capacitor should have an effective series resistance of 5 w or less, and a resonant frequency above 1mhz. a 1 m f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capaci- tor types can be used. (since many aluminum electrolytic capacitors freeze at approximately C 30 c, solid tantalums are recommended for applications operating below C 25 c.) when operating from sources other than batteries, supply- noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. thermal considerations thermal shutdown integrated thermal protection circuitry shuts the regula- tor off when die temperature exceeds 150 c. the regulator remains off until the die temperature drops to approximately 140 c. power dissipation the amount of power the regulator dissipates is prima- rily a function of input and output voltage, and output current. the following equation is used to calculate worst case actual power dissipation: p d ? (v in max C v out min )i load max where: p d = worst case actual power dissipation v in max = maximum voltage on v in v out min = minimum regulator output voltage i load max = maximum output (load) current equation 1. the maximum allowable power dissipation (equation 2) is a function of the maximum ambient temperature (t a max ), the maximum allowable die temperature (125 c), and the thermal resistance from junction-to-air ( u ja ). the soic-8 figure 1. typical application circuit tc1107 1 2 3 4 5 6 7 8 v out v out c bypass 470pf (optional) shutdown control (from power control logic) c2 1 f gnd nc bypass v in nc nc shdn c1 1 f battery
4 tc1107 300ma cmos ldo with shutdown and v ref bypass tc1107-1 9/14/99 package has a u ja of approximately 160 c/watt , while the msop-8 package has a u ja of approximately 200 c/watt ; both when mounted on a single layer fr4 dielectric copper clad pc board. p d max = (t j max - t a max ) u ja where all terms are previously defined. equation 2. equation 1 can be used in conjunction with equation 2 to ensure regulator thermal operation is within limits. for example: given: v in max = 3.0v 10% v out min = 2.7v C2.5% i load = 250ma t a max =55 c msop-8 package find: 1. actual power dissipation 2. maximum allowable dissipation. actual power dissipation: p d ? (v in max C v out min )i load max = [(3.0 x 1.1) C (2.7 x .975)]250 x 10 -3 = 167mw maximum allowable power dissipation: p d max = (t j max C t a max ) u ja = (125 C 55) 200 = 350mw in this example, the tc1107 dissipates a maximum of only 167mw; far below the allowable limit of 350mw. in a similar manner, equation 1 and equation 2 can be used to calculate maximum current and/or input voltage limits. layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower u ja and, therefore, increase the maximum allowable power dissipation limit.
5 300ma cmos ldo with shutdown and v ref bypass tc1107 tc1107-1 9/14/99 typical characteristics output noise frequency (khz) noise ( v/ ? / hz) 10.0 1.0 0.01 0.01 1 10 100 1000 0.1 0.0 r load = 50 c out = 1 f 0.012 0.010 0.008 0.004 0.002 0.000 ?.002 ?.004 0.006 ?0 ?0 0 20 40 60 80 100 120 temperature ( c) line regulation line regulation (%) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 300 load current (ma) dropout voltage vs. load current dropout voltage (v) power supply rejection ratio frequency (khz) ?0db ?5db ?0db ?5db ?0db ?5db ?0db ?5db ?0db ?5db ?0db 100 1k 10k 10 1m 100k v out = 5v r load = 50 v inac = 50mv p-p c out = 1 f 100.0 90.0 70.0 80.0 50.0 40.0 60.0 ?0 ?0 0 20 40 60 80 100 120 temperature ( c) supply current supply current ( a) 2.00 1.80 1.60 1.20 1.00 0.80 0.60 0.40 0.20 0.00 1.40 ?0 ?0 0 20 40 60 80 100 120 temperature ( c) load regulation load regulation (%) 1 to 300ma 1 to 50ma 1 to 100ma 3.075 3.025 2.925 2.975 ?0 ?0 0 20 40 60 80 100 120 temperature ( c) v out vs. temperature v out (v) 125 c 85 c 70 c 25 c 0 c ?0 c v in = 4v i load = 100 a c load = 3.3 f
6 tc1107 300ma cmos ldo with shutdown and v ref bypass tc1107-1 9/14/99 package dimensions dimensions: inches (mm) .050 (1.27) typ. 8 max. pin 1 indicated by dot and / or beveled edge .244 (6.20) .228 (5.79) .157 (3.99) .150 (3.81) .197 (5.00) .189 (4.80) .018 (0.46) .014 (0.36) .010 (0.25) .004 (0.10) .069 (1.75) .053 (1.35) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40) 8-pin soic 8-pin msop .122 (3.10) .114 (2.90) .122 (3.10) .114 (2.90) .043 (1.10) max. .006 (0.15) .002 (0.05) .016 (0.40) .010 (0.25) .197 (5.00) .187 (4.80) pin 1 .008 (0.20) .005 (0.13) .028 (0.70) .016 (0.40) 6 max. .026 (0.65) typ.
7 300ma cmos ldo with shutdown and v ref bypass tc1107 tc1107-1 9/14/99 pin 1 pin 1 component taping orientation for soic devices user direction of feed user direction of feed standard reel component orientation for 713 or tr suffix device reverse reel component orientation for 723 or rt suffix device w = width of carrier tape p = pitch package carrier width (w) pitch (p) part per full reel reel size 8-pin soic (n) 12 mm 8 mm 2500 13 in 14-pin soic (n) 12 mm 8 mm 2500 13 in 16-pin soic (n) 16 mm 8 mm 2500 13 in 16-pin soic (w) 16 mm 12 mm 1000 13 in 24-pin soic (w) 24mm 12 mm 1000 13 in 28-pin soic (w) 24 mm 12 mm 1000 13 in carrier tape, reel size, and number of components per reel pin 1 pin 1 component taping orientation for msop devices user direction of feed user direction of feed standard reel component orientation for 713 or tr suffix device reverse reel component orientation for 723 or rt suffix device w = width of carrier tape p = pitch package carrier width (w) pitch (p) part per full reel reel size 8-pin msop 12 mm 8 mm 2500 13 in carrier tape, reel size, and number of components per reel tape and reel diagrams telcom semiconductor h.k. ltd. 10 sam chuk street, ground floor san po kong, kowloon hong kong tel: (011) 852-2350-7380 fax: (011) 852-2354-9957 sales offices telcom semiconductor, inc. 1300 terra bella avenue p.o. box 7267 mountain view, ca 94039-7267 tel: 650-968-9241 fax: 650-967-1590 e-mail: liter@telcom-semi.com telcom semiconductor, gmbh lochhamer strasse 13 d-82152 martinsried germany tel: (011) 49 89 895 6500 fax: (011) 49 89 895 6502 2


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