preliminary data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. document no. p15107ej1v0ds00 (1st edition) date published september 2000 ns cp(k) printed in japan ? 1999, 2000 n-channel gaas mes fet ne6500179a 1 w l-band power gaas mes fet description the ne6500179a is a 1 w gaas mes fet designed for middle power transmitter applications for mobile communication handset and base station systems. it is capable of delivering 1 w of output power (cw) with high linear gain, high efficiency and excellent distortion. reliability and performance uniformity are assured by necs stringent quality and control procedures. features ? high output power: p o (1 db) = 30.0 dbm typ. ? high linear gain: g l = 12.0 db typ. ? high power added efficiency: h add = 50 % typ. @ v ds = 6.0 v, i dset = 200 ma, f = 1.9 ghz ordering information part number package supplying form NE6500179A-T1 79a ? 12 mm wide embossed taping ? qty 1 kpcs/reel remark to order evaluation samples, consult your nec sales representative (part number for sample order: ne6500179a). caution please handle this device at static-free workstation, because this is an electrostatic sensitive device.
preliminary data sheet p15107ej1v0ds00 2 ne6500179a absolute maximum ratings (t a = +25 c) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 15 v gate to source voltage v gso - 7v drain current i d 2.5 a gate forward current i gf 20 ma gate reverse current i gr 20 ma total power dissipation p tot 7w channel temperature t ch 150 c storage temperature t stg - 65 to +150 c recommended operating conditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds - 6.0 6.0 v gain compression gcomp -- 3.0 db channel temperature t ch -- +125 c electrical characteristics (t a = +25 c, unless otherwise specified, using nec standard test fixture.) parameter symbol test conditions min. typ. max. unit saturated drain current i dss v ds = 2.5 v, v gs = 0 v - 1.8 - a pinch-off voltage v p v ds = 2.5 v, i d = 10 ma - 3.6 -- 1.6 v gate to drain break down voltage bv gd i gd = 10 ma 15 -- v thermal resistance r th channel to case - 15 - c/w gain 1 db compression output power p o (1 db) f = 1.9 ghz, v ds = 6.0 v, - 30.0 - dbm drain current i d r g = 30 w , i dset = 200 ma (rf off) - 340 - ma power added efficiency h add note 2 - 50 - % linear gain note 1 g l 11.0 12.0 - db notes 1. p in = 0 dbm 2. dc performance is 100 % testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples.
preliminary data sheet p15107ej1v0ds00 3 ne6500179a typical characteristics (t a = +25 c) i d i g p out v ds = 6.0 v i dset = 200 ma (rf off) r g = 30 w , f = 1.9 ghz output power, drain current, gate current vs. input power output power p out (dbm) drain current i d (ma) input power p in (dbm) 35 20 25 30 10 15 5 1 000 800 600 400 200 0 25 20 15 10 5 0 C5 gate current i g (ma) 10 8 6 4 2 0 C2 remark the graph indicates nominal characteristics.
preliminary data sheet p15107ej1v0ds00 4 ne6500179a s-parameters test conditions: v ds = 6.0 v, i dset = 200 ma (rf off) frequency s 11 s 21 s 12 s 22 mhz mag. ang. (deg.) mag. ang. (deg.) mag. ang. (deg.) mag. ang. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 0.895 0.890 0.886 0.884 0.881 0.879 0.879 0.879 0.877 0.876 0.876 0.876 0.877 0.875 0.876 0.875 0.876 0.875 0.875 0.875 0.876 0.876 0.877 0.876 0.875 0.880 - 145.1 - 152.4 - 158.2 - 163.0 - 167.0 - 170.4 - 173.4 - 176.4 - 179.1 178.3 175.7 173.0 170.4 167.7 165.0 162.5 159.9 157.2 154.6 151.9 149.3 146.7 144.0 141.6 139.5 137.1 6.305 5.356 4.684 4.157 3.708 3.381 3.105 2.880 2.681 2.518 2.368 2.237 2.122 2.021 1.927 1.842 1.765 1.691 1.620 1.552 1.489 1.429 1.366 1.305 1.247 1.203 96.12 91.79 87.59 84.18 81.06 78.08 75.16 72.51 69.60 66.85 64.05 61.40 58.60 55.76 52.81 49.91 47.10 44.16 41.13 38.07 35.13 32.08 29.08 26.27 23.72 20.91 0.037 0.037 0.038 0.038 0.039 0.039 0.039 0.040 0.040 0.041 0.041 0.041 0.042 0.042 0.043 0.042 0.043 0.043 0.043 0.043 0.043 0.043 0.043 0.043 0.042 0.042 18.49 15.64 13.66 11.83 10.32 9.36 8.22 6.99 5.95 5.24 4.31 3.11 1.97 1.23 0.05 - 0.66 - 2.19 - 3.00 - 4.19 - 5.43 - 6.55 - 8.05 - 9.20 - 10.15 - 11.98 - 12.74 0.595 0.601 0.607 0.608 0.609 0.610 0.609 0.609 0.607 0.607 0.606 0.606 0.604 0.603 0.601 0.600 0.600 0.600 0.600 0.601 0.603 0.603 0.606 0.610 0.613 0.620 - 172.3 - 175.2 - 177.3 - 179.2 178.9 177.3 175.8 174.3 172.7 171.1 169.4 167.9 166.2 164.6 162.7 160.6 158.5 156.4 154.3 152.0 149.7 147.3 144.9 142.6 140.7 138.2
preliminary data sheet p15107ej1v0ds00 5 ne6500179a package dimensions 79a (unit: mm) source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain bottom view 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. 0.90.2 0.20.1 tc 97
preliminary data sheet p15107ej1v0ds00 6 ne6500179a recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235 c or below, time: 30 seconds or less (at 210 c or higher), count: 2 times or less, exposure: limit: none note ir35-00-2 partial heating pin temperature: 260 c or below, time: 5 seconds or less (per pin row) exposure: limit: none note - note after opening the dry pack, store it at 25 c or less and 65 % rh or less for the allowable storage period. caution do not use different soldering methods together (except for partial heating).
preliminary data sheet p15107ej1v0ds00 7 ne6500179a [memo]
ne6500179a caution the great care must be taken in dealing with the devices in this guide. the reason is that the material of the devices is gaas (gallium arsenide), which is designated as harmful substance according to the law concerned. keep the law concerned and so on, especially in case of removal. m8e 00. 4 the information in this document is current as of september, 2000. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
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