MG100Q2YS65H 2002-10-04 1 toshiba igbt module silicon n channel igbt MG100Q2YS65H high power & high speed switching applications ? high input impedance ? enhancement-mode ? the electrodes are isolated from case. equivalent circuit maximum ratings (ta = = = = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc i c 100 collector current 1 ms i cp 200 a dc i f 100 forward current 1 ms i fm 200 a collector power dissipation (tc = 25c) p c 690 w junction temperature t j 150 c storage temperature range t stg ? 40 to 125 c isolation voltage v isol 2500 (ac 1 minute) v terminal ? 3 screw torque mounting ? 3 n ? m ? unit: mm ? jedec D jeita D toshiba 2-95a4a weight: 255 g (typ.) g1 e1/c2 e2 g2 e1 e2 c1
MG100Q2YS65H 2002-10-04 2 electrical characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20 v, v ce = 0 ? ? 500 na collector cut-off current i ces v ce = 1200 v, v ge = 0 ? ? 2.0 ma gate-emitter cut-off voltage v ge (off) i c = 100 ma, v ce = 5 v 4.0 ? 7.0 v tc = 25c ? 3.0 4.0 collector-emitter saturation voltage v ce (sat) i c = 100 a, v ge = 15 v tc = 125c ? 3.6 ? v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 8500 ? pf turn-on delay time t d (on) ? 0.05 ? rise time t r ? 0.05 ? turn-on time t on ? 0.10 ? turn-off delay time t d (off) ? 0.55 ? fall time t f ? 0.05 0.15 switching time turn-off time t off inductive load v cc = 600 v, i c = 100 a v ge = 15 v, r g = 9.1 ? ? 0.60 ? s forward voltage v f i f = 100 a, v ge = 0 ? 2.4 3.5 v reverse recovery time t rr i f = 100 a, v ge = ? 10 v, di/dt = 700 a/ s ? 0.1 ? s transistor stage ? ? 0.18 thermal resistance r th (j-c) diode stage ? ? 0.41 c/w turn-on e on ? 10 ? switching loss turn-off e off inductive load v cc = 600 v, i c = 100 a v ge = 15 v, r g = 9.1 ? tc = 125c ? 8 ? mj note: switching time measurement circuit and input/output waveforms i c r g r g l i f ? v ge v cc v ce v ge i c 0 0 90% 90% 10% 10% 90% t d (off) t off t f t r t d (on) t on 10% t rr
MG100Q2YS65H 2002-10-04 3 collector-emitter voltage v ce (v) i c ? v ce (sat) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce (sat) collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) forward voltage v f (v) i f ? v f forward current i f (a) 0 0 50 100 150 200 2 4 6 8 10 v ge = 8 v 10 v 12 v 20 v 18 v 15 v common emitter tc = 125c 0 0 2 4 6 8 10 12 4 8 12 16 20 common emitter tc = 25c i c = 200 a 100 a 50 a 0 0 2 4 6 8 10 12 4 8 12 16 20 common emitter tc = 125c i c = 200 a 50 a 100 a 0 0 50 100 150 200 1 2 3 4 5 ? 40c 125c tc = 25c common cathode v ge = 0 0 0 50 100 150 200 4 8 12 16 common emitter v ce = 5 v tc = 125c ? 40c 25c 12 v 0 0 50 100 150 200 2 4 6 8 10 common emitter tc = 25c v ge = 8 v p c = 690 w 10 v 20 v 18 v 15 v
MG100Q2YS65H 2002-10-04 4 switching loss (mj) switching time ( s) collector current i c (a) switching time ? i c switching time ( s) collector current i c (a) switching time ? i c switching time ( s) gate resistance r g ( ? ) switching time ? r g switching time ( s) gate resistance r g ( ? ) switching time ? r g collector current i c (a) switching loss ? i c gate resistance r g ( ? ) switching loss ? r g switching loss (mj) 0.01 0.1 10 0 10 60 20 30 40 : tc = 25c : tc = 125c common emitter v cc = 600 v i c = 100 a v ge = 15 v t off t d ( off ) t f 1 50 1 10 100 1 100 10 e on e off e dsw : tc = 25c : tc = 125c common emitter v cc = 600 v i c = 100 a v ge = 15 v 0.01 0.1 1 0 10 60 20 30 50 t r t d (on) t on common emitter v cc = 600 v i c = 100 a v ge = 15 v : tc = 25c : tc = 125c 40 0.1 1 100 1 100 10 e off e dsw e on : tc = 25c : tc = 125c common emitter v cc = 600 v v ge = 15 v r g = 9.1 ? 10 0.01 10 0.1 1 30 100 : tc = 25c : tc = 125c common emitter v cc = 600 v v ge = 15 v r g = 9.1 ? t r t on t d (on) 0.01 10 0.1 1 30 100 t off t d (off) t f common emitter v cc = 600 v v ge = 15 v r g = 9.1 ? : tc = 25c : tc = 125c
MG100Q2YS65H 2002-10-04 5 transient thermal resistance r th (t) (c/w) collector current i c (a) gate-emitter voltage v ge (v) charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) collector-emitter voltage v ce (v) short circuit soa collector current (x times) collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w 0 3 6 0 400 1400 200 800 1200 v cc < = 900 v t j < = 125c t w = 5 s 5 4 2 1 600 1000 100 0.01 10000 100000 1 100 c ies c oes cres common emitter v ge = 0 f = 1 mhz tc = 25c 1000 0.1 10 0.1 1 1000 0 400 1400 t j < = 125c v ge = 15 v r g = 9.1 ? 100 1000 10 200 600 800 1200 0.001 0.001 0.1 10 0.1 10 diode stage transistor stage tc = 25c 0.01 0.01 1 1 0 0 800 1600 400 1000 common emitter r l = 6 ? tc = 25c 400 1200 200 800 600 8 16 4 12 v ce = 0 200 v 400 v 600 v
MG100Q2YS65H 2002-10-04 6 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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