features ? high efficiency: 11% @ p C1 db typical ? output power, p C1 db : 18 dbm typical ? high gain: 14 db typical ? flat gain response: 0.5 db typical ? low input/output vswr: < 1.7:1 typical ? single supply bias: 5 volts (@ 115 ma typical) with optional gate bias agilent HMMC-5618 6C20 ghz medium power amplifier 1gg6-8002 data sheet chip size: 920 x 920 m (36.2 x 36.2 mils) chip size tolerance: 10 m (0.4 mils) chip thickness: 127 15 m (5.0 0.6 mils) pad dimensions: 80 x 80 m (3.2 x 3.2 mils) description the HMMC-5618 66 to 20 ghz mmic is an efficient two-stage medium-power amplifier that is designed to be used as a cascadable intermediate gain block for ew applications. in communication systems, it can be used as an amplifier for a local oscillator or as a transmit amplifier. it is fabricated using a phemt integrated circuit structure that provides exceptional efficiency and flat gain performance. during typical operation, with a single 5-volt dc power supply, each gain stage is biased for class-a operation for optimal power output with minimal distortion. the rf input and rf output has matching circuitry for use in 50 ? environments. the backside of the chip is both rf and dc ground. this helps simplify the assembly process and reduces assembly related performance variations and costs. absolute maximum ratings 1 symbol parameters/conditions minimum maximum units v d1 , v d2 drain supply voltage 5.5 volts v g1 optional gate supply voltage C5 +1 volts v g2 optional gate supply voltage C10 +1 volts i d1 drain supply current 70 ma i d2 drain supply current 84 ma p in rf input power 2 20 dbm t ch channel temperature 3 160 c t a backside ambient temperature C55 +100 c t st storage temperature C65 +150 c t max maximum assembly temperature 300 c 1 absolute maximum ratings for continuous operation unless otherwise noted. 2 operating at this power level for extended (continuous) periods is not recommended. 3 refer to dc specifications/physical properties table for derating information.
2 dc specifications/physical properties 1 symbol parameters/conditions minimum typical maximum units v d1 , v d2 drain supply voltage 3.0 5.0 5.5 volts i d1 stage-one drain supply current 50 ma (v d1 = 5 v, v g1 = open or ground) i d2 stage-two drain supply current 65 ma (v d2 = 5 v, v g2 = open or ground) i d1 + i d2 total drain supply current 115 140 ma (v d1 = v d2 = 5 v, v g1 = v g2 = open or ground) v p1 optional input-stage gate supply pinch-off voltage C4 C2.8 volts (v d1 = 5 v, i d1 < 3 ma: input stage off 2 ) i g1 gate supply current (input stage off 2 ) 0.9 ma v p2 optional output-stage gate supply pinch-off voltage (v d2 = 5 v, i d2 < 3.6 ma: output stage off 2 ) C7.5 C5.3 volts i g2 gate supply current (output stage off 2 ) 1.7 ma chCbs thermal resistance 3 87 c/watt (channel-to-backside at t ch = 50c) t ch channel temperature 4 (t a = 100c, 150 c mttf > 10 6 hrs, v d1 = v d2 = 5 v, v g1 = v g2 = open) 1 backside ambient operating temperature t a = 25c unless otherwise noted. 2 the specified fet stage is in the off state when biased with a gate voltage level that is sufficient to pinch off the drain c urrent. 3 thermal resistance (in c/watt) at a channel temperature t(c) can be estimated using the equation: (t) = ~ 87 x [t(c)+273] / [150 c+273]. 4 derate mttf by a factor of two for every 8c above t ch . rf specifications (t a = 25c, v d1 = v d2 = 5 v, v g1 = v g2 = open or ground, z 0 = 50 ?) 6 to 18 ghz 5.9 to 20 ghz symbol parameters/conditions typical minimum maximum minimum maximum units gain small signal gain 14 12 11.5 db ?gain gain flatness 0.5 db ?s 21 /?t temperature coefficient of gain C0.025 db/c (rl in ) min minimum input return loss 12 10 9 db (rl out ) min minimum output return loss 12 10 10 db isolation reverse isolation 40 db p C1 db output power at 1 db gain 18 17 17 dbm compression p sat saturated output power 20 18.5 18.5 dbm (p in = 10 dbm) nf noise figure 5.5 7 7 db
3 applications the HMMC-5618 is a gaas mmic medium-power amplifier designed for optimum class-a efficiency and flat gain performance from 6 ghz to 20 ghz. it has applications as a cascadable gain stage for ew amplifier, buffer stages, lo-port driver, phased-array radar, and transmitter amplifiers used in commercial communication systems. the mmic solution is a cost effective alternative to hybrid assemblies. biasing and operation the mmic amplifier is normally biased with a single positive drain supply connected to both v d1 and v d2 bond pads as shown in figures 10 and 11. the recommended drain supply voltage is 3 to 5 volts. if desired, the first stage drain bonding pad can be biased separately to provide a small amount of gain slope control or bandwidth extension as demonstrated in figure 2. no ground wires are required because all ground connections are made with plated through-holes to the backside of the device. gate bias pads (v g1 and v g2 ) are also provided to allow adjustments in gain, rf output power, and dc power dissipation, if necessary. no connection to the gate pads is needed for single drain-bias operation. however, for custom applications, the dc current flowing through the input and/or output gain stage may be adjusted by applying a voltage to the gate bias pad(s) as shown in figure 11. a negative gate-pad voltage will decrease the drain current. the gate-pad voltage is approximately zero volts during operation with no dc gate supply. refer to the "absolute maximum ratings" table for allowed dc and thermal conditions. assembly techniques it is recommended that the rf input, rf output, and dc supply connections be made using 0.7 mil diameter gold wire. the device has been designed so that optimum performance is realized when the rf input and rf output bond-wire inductance is approximately 0.2 nh (10 mils) as demonstrated in figures 4, 6, and 7. gaas mmics are esd sensitive. esd preventive measures must be employed in all aspects of storage, handling, and assembly. mmic esd precautions, handling considerations, die attach and bonding methods are critical factors in successful gaas mmic performance and reliability. agilent application note #54, "gaas mmic esd, die attach and bonding guidelines" provides basic information on these subjects. additional references an #49, "HMMC-5618 (6-20 ghz) amplifier" pn #14, "HMMC-5618 driven by an hmmc-5020" out in matching v g1 feedback network 2 k? 2 k? v g2 1 k? 2 k? matching v d1 matching v d2 figure 1. simplified schematic diagram
4 v d2 = 5.0 v, v g1 = v g2 = open 20 15 10 5 0 0 10 20 30 40 50 small-signal gain (db) reverse isolation (db) frequency (ghz) 2 6 10 14 18 22 gain isolation spec. range (5.9 - 20 ghz) v d1 = 5.0 v v d1 = 3.0 v figure 2. gain and isolation vs. frequency v d1 = v d2 = 5.0 v, v g1 = v g2 = open 0 5 10 15 20 25 0 5 10 15 20 25 input return loss (db) output return loss (db) frequency (ghz) 2 6 10 14 18 22 output input spec. range (5.9 - 20 ghz) figure 3. input and output return loss vs. frequency
5 s-parameters 1 (t a = 25c, v d1 = v d2 = 5.0 v, v g1 = v g2 = open, z 0 = 50 ?) frequency s11 s12 s21 s22 (ghz) db mag ang db mag ang db mag ang db mag ang 2.0 C4.8 0.574 C140.8 C71.2 0.000 C73.5 C43.0 0.0070 117.3 C0.9 0.901 C75.4 2.5 C5.6 0.526 C166.9 C74.4 0.000 C12.0 C25.3 0.0544 C113.7 C1.6 0.835 C99.7 3.0 C6.0 0.501 166.4 C73.6 0.000 C41.3 C8.0 0.3981 C124.1 C3.3 0.687 C127.0 3.5 C6.2 0.492 136.2 C55.9 0.002 C51.8 2.9 1.4008 C159.1 C6.1 0.498 C156.7 4.0 C6.7 0.461 99.3 C49.4 0.003 C94.9 10.4 3.3208 154.4 C10.3 0.305 171.1 4.5 C8.8 0.363 60.6 C45.5 0.005 C140.6 14.2 5.1331 104.5 C16.7 0.147 133.8 5.0 C11.9 0.255 30.7 C43.8 0.006 C179.4 15.4 5.9052 62.9 C23.2 0.069 76.1 5.5 C14.4 0.190 10.9 C43.8 0.006 152.8 15.6 6.0539 31.6 C22.0 0.079 21.3 6.0 C15.8 0.163 C3.8 C43.4 0.007 132.6 15.6 6.0319 6.8 C18.9 0.114 C5.5 6.5 C16.4 0.152 C16.2 C43.4 0.007 116.8 15.6 6.0062 C14.1 C16.8 0.144 C19.6 7.0 C16.3 0.153 C27.4 C43.1 0.007 101.8 15.5 5.9669 C32.7 C15.4 0.171 C30.5 7.5 C16.0 0.159 C38.0 C43.0 0.007 87.6 15.5 5.9318 C49.7 C14.3 0.193 C39.4 8.0 C15.4 0.171 C48.2 C42.8 0.007 79.1 15.4 5.8635 C65.4 C13.5 0.212 C47.1 8.5 C14.9 0.180 C58.5 C42.7 0.007 68.9 15.4 5.8567 C80.0 C12.9 0.227 C54.4 9.0 C14.5 0.189 C67.5 C42.5 0.008 58.9 15.3 5.8232 C94.2 C12.5 0.237 C61.4 9.5 C14.1 0.198 C75.8 C42.3 0.008 50.2 15.2 5.7757 C107.8 C12.2 0.246 C67.8 10.0 C13.7 0.206 C83.6 C42.0 0.008 41.0 15.2 5.7385 C121.0 C12.0 0.252 C73.9 10.5 C13.4 0.214 C91.2 C42.0 0.008 33.7 15.1 5.7043 C133.8 C11.9 0.254 C79.6 11.0 C13.2 0.219 C98.3 C42.0 0.008 27.5 15.1 5.6618 C146.2 C11.9 0.253 C85.2 11.5 C13.0 0.223 C105.1 C41.7 0.008 19.8 15.0 5.6180 C158.4 C12.0 0.250 C90.0 12.0 C13.0 0.224 C111.4 C41.3 0.009 13.9 14.9 5.5801 C170.4 C12.2 0.245 C94.3 12.5 C13.0 0.224 C117.5 C40.9 0.009 6.2 14.9 5.5525 177.7 C12.5 0.238 C98.2 13.0 C13.1 0.221 C123.2 C40.8 0.009 1.0 14.9 5.5276 166.0 C12.8 0.230 C101.6 13.5 C13.3 0.217 C128.7 C40.5 0.009 C6.7 14.8 5.5138 154.2 C13.1 0.221 C104.3 14.0 C13.5 0.210 C134.1 C40.2 0.010 C12.5 14.8 5.5069 142.3 C13.5 0.211 C106.2 14.5 C13.9 0.201 C138.9 C40.0 0.010 C17.5 14.8 5.4997 130.5 C13.9 0.201 C107.1 15.0 C14.5 0.188 C143.4 C39.2 0.011 C25.3 14.8 5.5050 118.6 C14.4 0.191 C106.8 15.5 C15.2 0.174 C147.2 C39.1 0.011 C31.8 14.8 5.5089 106.3 C14.7 0.184 C105.4 16.0 C16.2 0.155 C150.0 C38.6 0.012 C38.9 14.8 5.5103 93.8 C14.9 0.180 C103.4 16.5 C17.5 0.133 C150.7 C38.4 0.012 C45.8 14.8 5.5013 80.9 C14.9 0.180 C100.3 17.0 C19.2 0.110 C147.8 C37.8 0.013 C52.1 14.8 5.4892 67.9 C14.6 0.186 C97.4 17.5 C21.1 0.088 C138.0 C37.3 0.014 C60.7 14.7 5.4475 54.4 C14.3 0.194 C95.6 18.0 C22.1 0.079 C117.7 C36.7 0.015 C69.6 14.7 5.4016 40.5 C13.7 0.206 C95.1 18.5 C20.7 0.092 C96.6 C35.9 0.016 C74.8 14.5 5.3231 26.1 C13.3 0.217 C96.0 19.0 C18.2 0.123 C83.9 C35.4 0.017 C85.0 14.3 5.2168 11.2 C13.0 0.224 C98.0 19.5 C15.4 0.169 C80.3 C35.0 0.018 C95.7 14.0 5.0371 C4.3 C12.9 0.226 C99.4 20.0 C13.0 0.224 C81.8 C34.8 0.018 C105.6 13.7 4.8240 C19.9 C13.0 0.225 C100.9 20.5 C11.1 0.278 C85.7 C34.7 0.018 C114.9 13.2 4.5580 C36.4 C13.3 0.217 C99.8 21.0 C9.6 0.332 C91.2 C34.2 0.020 C126.3 12.5 4.2135 C52.5 C13.8 0.205 C97.5 21.5 C8.3 0.384 C97.7 C34.3 0.019 C137.2 11.7 3.8489 C68.9 C14.0 0.199 C90.2 22.0 C7.3 0.432 C284.7 C34.2 0.020 C328.3 10.8 3.4671 C85.5 C13.4 0.214 C80.1 1 data obtained from on-wafer measurements.
6 v d1 = v d2 = 5.0 v, v g1 = v g2 = open 20 15 10 5 0 0 10 20 30 40 50 small-signal gain (db) reverse isolation (db) frequency (ghz) 2 6 10 14 18 22 gain isolation spec. range (5.9 - 20 ghz) includes 0.2 nh wire inductance wafer-probed measurements figure 4. effects of input/output bond wire inductance on gain and isolation v d1 = v d2 = 5.0 v, v g1 = v g2 = open 10 8 6 4 2 0 noise ?gure (db) frequency (ghz) 4 8 12 16 20 spec. range (5.9 - 20 ghz) figure 5. noise figure vs. frequency v d1 = v d2 = 5.0 v, v g1 = v g2 = open 0 5 10 15 20 25 input return loss (db) frequency (ghz) 2 6 10 14 18 22 spec. range (5.9 - 20 ghz) includes 0.2 nh wire inductance wafer-probed measurements figure 6. effects of input/output bond wire inductance on input return loss v d1 = v d2 = 5.0 v, v g1 = v g2 = open 0 5 10 15 20 25 ouput return loss (db) frequency (ghz) 2 6 10 14 18 22 spec. range (5.9 - 20 ghz) includes 0.2 nh wire inductance wafer-probed measurements figure 7. effects of input/output bond wire inductance on output return loss v d1 = v d2 = 5.0 v, v g1 = v g2 = open 20 18 16 14 12 10 22 20 18 16 14 12 p C1 db and p sat (dbm) small-signal gain (db) temperature (c) 0 20406080100 p sat p C1 db gain C0.025 db/c 6 ghz 12 ghz 20 ghz figure 8. power and gain vs. backside temperature v d1 = v d2 = 5.0 v, v g1 = v g2 = open 125 115 105 95 85 75 total drain current (ma) temperature (c) 0 20406080100 C0.08 ma/c figure 9. drain current vs. backside temperature
7 this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifications. customers considering the use of this, or other agilent tca gaas ics, for their design should obtain the current production specifications from agilent tca marketing. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact agilent tca marketing at 707-577-4482. figure 10. assembly for single drain-bias operation figure 12. bonding pad positions 0 920 530 79 593 920 0 note: all dimensions in micrometers. 0 145 355 573 v g1 v g2 out in v d1 v d2 800 pf to v dd power supply chip capacitor (100 pf) locate near mmic gold plated shim (optional) rf input rf out ** * 0.2 nh bond wire inductance (10 mils) short bond wires figure 11. assembly with gate bias connections 800 pf to v dd power supply chip capacitor (100 pf) locate near mmic gold plated shim (optional) rf input rf out ** * 0.2 nh bond wire inductance (10 mils) bonding island or small chip-capacitor to v g1 power supply bonding island or small chip-capacitor to v g2 power supply
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