description agilents ammc- 5618 6- 20 ghz mmic is an efficient two- stage amplifier designed to be used as a cascadable intermediate gain block for ew applications. in communication systems, it can be used as a lo buffer, or as a transmit driver amplifier. it is fabricated using a phemt integrated circuit structure that provides exceptional efficiency and flat gain performance. during typical operation with a single 5- v supply, each gain stage is biased for class- a operation for optimal power output with minimal distortion. the rf input and output have matching circuitry for use in 50- w environments. the backside of the chip is both rf and dc ground. this helps simplify the assembly process and reduces assembly related performance variations and costs. for improved reliability and moisture protection, the die is passivated at the active areas. the mmic is a cost effective alternative to hybrid (discrete fet) amplifiers that require complex tuning and assembly processes. note: these devices are esd sensitive. the fo llowing precautions are strongly recommended: ensure that an esd approved carrier is used when dice are transported from one destination to another. personal grounding is to be worn at all times when handling these devices. agilent ammc-5618 6 - 20 ghz amplifier data sheet features ? frequency range: 6 ? 20 ghz ? high gain: 14.5 db typical output power: 19.5 dbm typical input and output return loss: < -12 db flat gain response: 0.3 db typical single supply bias: 5 v @ 107 ma applications driver/buffer in microwave communication systems cascadable gain stage for ew systems phased array radar and transmit amplifiers ammc-5618 absolute maximum ratings [1] symbol parameters/conditions units min. max. v d1 ,v d2 drain supply voltage v 7 v g1 optional gate voltage v -5 +1 v g2 optional gate voltage v -5 +1 i d1 drain supply current ma 70 i d2 drain supply current ma 84 p in rf input power dbm 20 t ch channel temp. c +150 t b operating backside temp. c-55 t stg storage temp. c -65 +165 t max maximum assembly temp. (60 sec max) c +300 note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. chip size: 920 x 920 m (36.2 x 36.2 mils) chip size tolerance: 10 m ( 0.4 mils) chip thickness: 100 10 m (4 0.4 mils) pad dimensions: 80 x 80 m (3.1 x 3.1 mils or larger)
2 ammc-5618 dc specifications / physical properties [1] ammc-5618 rf specifications [3] (tb = 25 c, v dd = 5 v, i dd = 107 ma, z 0 = 50 ? .) symbol parameters and test co nditions unit min. typical max. v d1 ,v d2 recommended drain supply voltage v 3 5 7 i d1 first stage drain supply current (v d1 = 5v, v g1 = open or ground) ma 48 i d2 second stage drain supply current (v d2 = 5v, v g2 = open or ground) ma 59 i d1 + i d2 total drain supply current (v g1 = v g2 = open or ground, v d1 = v d2 = 5 v) ma 107 140 ch-b thermal resistance [2] (backside temperature (t b ) = 25 c c/w 22 notes: 1. backside temperature tb = 25 c unless otherwise noted 2. channel-to-backside thermal resistance ( ch-b ) = 32 c/w at t channel (t c ) = 150 c as measured using infrared microscopy. thermal resistance at backside temperature (t b ) = 25 c calculated from measured data. symbol parameters and test co nditions unit min. typical max. |s 21 | 2 small-signal gain db 12.5 14.5 ? |s 21 | 2 small-signal gain flatness db 0.3 rl in input return loss db 9 12 rl out output return loss db 9 12 |s 12 | 2 isolation db 40 45 p -1db output power at 1db gain co mpression @ 20 ghz dbm 17.5 19.5 p sat saturated output power (3db ga in compression) @ 20 ghz dbm 20.5 oip3 output 3rd order inte rcept point @ 20 ghz dbm 26 ? s 21 / ? t temperature coefficient of gain [4] db/ c -0.023 nf noise figure @ 20 ghz db 4.4 6.5 notes: 3. 100% on-wafer rf test is done at freq uency = 6, 13 and 20 ghz, except as noted. 4. temperature coefficient of gain based on sample test
3 ammc-5618 typical performance (t chuck =25 c, v dd =5v, i dd = 107 ma, zo=50 ? ) ammc-5618 typical performa nce vs. supply voltage (tb=25 c, zo=50 ? ) figure 1. gain figure 2. isolation figure 3. input return loss figure 4. output return loss figure 5. noise figu re figure 6. output power at 1 db gain compres- sion figure 7. gain and voltage figure 8. isolation and voltage figure 9. input return loss and voltage frequency (ghz) gain (db) 4 7 10 13 16 19 22 18 15 12 9 6 3 0 frequency (ghz) isolation (db) 4 7 10 13 16 19 22 0 -10 -20 -30 -40 -50 -60 -70 frequency (ghz) input rl (db) 4 7 10 13 16 19 22 0 -5 -10 -15 -20 -25 frequency (ghz) output rl (db) 4 7 10 13 16 19 22 0 -5 -10 -15 -20 -25 -30 frequency (ghz) nf (db) 4 7 10 13 16 19 22 10 8 6 4 2 0 frequency (ghz) p1db (dbm) 4 7 10 13 16 19 22 24 20 16 12 8 4 0 frequency (ghz) gain (db) 4 7 10 13 16 19 22 18 15 12 9 6 3 0 vdd=4v vdd=5v vdd=6v frequency (ghz) isolation (db) 4 7 10 13 16 19 22 0 -10 -20 -30 -40 -50 -60 vdd=4v vdd=5v vdd=6v frequency (ghz) input rl (db) 4 7 10 13 16 19 22 0 -5 -10 -15 -20 -25 -30 vdd=4v vdd=5v vdd=6v
4 ammc-5618 typical performance vs. supply voltage (cont.) (tb=25 c, zo=50 ? ) a m m c - 5 6 1 8 ty p i c a l p e r f o r m a n c e v s . te m p e r a t u r e (v dd =5v, zo=50 ? ) figure 10. output return loss and voltage figure 11. output power and voltage figure 12. gain and temperature figure 13. isolation and temperature figure 14. input return loss and temperature figure 15. output return loss and temperature figure 16. noise figure and temperature figure 17. output power and temperature frequency (ghz) output rl (db) 4 7 10 13 16 19 22 0 -5 -10 -15 -20 -25 -30 -35 vdd=4v vdd=5v vdd=6v frequency (ghz) p1db (dbm) 4 7 10 13 16 19 22 25 20 15 10 5 0 vdd=4v vdd=5v vdd=6v frequency (ghz) gain (db) 4 7 10 13 16 19 22 18 15 12 9 6 3 0 -40 c 25 c 85 c frequency (ghz) isolation (db) 4 7 10 13 16 19 22 0 -10 -20 -30 -40 -50 -60 -40 c 25 c 85 c frequency (ghz) input rl (db) 4 7 10 13 16 19 22 0 -10 -20 -30 -40 c 25 c 85 c frequency (ghz) output rl (db) 4 7 10 13 16 19 22 0 -5 -10 -15 -20 -25 -40 c 25 c 85 c frequency (ghz) noise figure (db) 4 7 10 13 16 19 22 8 7 6 5 4 3 2 1 0 -40 c 25 c 85 c frequency (ghz) p1db (dbm) 4 7 10 13 16 19 22 25 20 15 10 5 0 -40 c 25 c 85 c
5 ammc-5618 typical scattering parameters [1] (tb=25 c, v dd = 5 v, i dd = 107 ma) freq ghz s11 s21 s12 s22 db mag phase db mag phase db mag phase db mag phase 2.00 -2.4 0.76 -125 -52.0 0 74 -80.0 0 -134 -0.4 0.95 -77 2.50 -2.9 0.72 -147 -35.4 0.02 -119 -74.0 0 -57 -0.9 0.91 -97 3.00 -3.2 0.69 -166 -19.0 0.11 -102 -69.1 0 -65 -1.6 0.84 -118 3.50 -3.6 0.66 174 -7.4 0.43 -120 -59.1 0 -60 -2.6 0.75 -138 4.00 -4.0 0.63 152 0.8 1.09 -147 -57.7 0 -104 -3.8 0.64 -156 4.50 -4.9 0.57 126 7.7 2.43 178 -51.8 0 -113 -5.3 0.55 -173 5.00 -7.3 0.43 94 12.5 4.2 138 -48.8 0 -142 -6.9 0.45 172 5.50 -12.7 0.23 67 14.7 5.41 94 -45.7 0.01 -170 -8.6 0.37 160 6.00 -19.8 0.1 66 15.1 5.69 60 -44.5 0.01 161 -10.1 0.31 151 6.50 -23.6 0.07 85 15.1 5.69 34 -44.6 0.01 142 -11.3 0.27 141 7.00 -24.7 0.06 87 15.0 5.64 13 -44.3 0.01 127 -12.6 0.23 130 7.50 -26.4 0.05 68 15.0 5.61 -5 -44.0 0.01 115 -13.9 0.2 120 8.00 -28.2 0.04 28 14.9 5.59 -22 -43.9 0.01 103 -15.3 0.17 109 8.50 -26.3 0.05 -23 14.9 5.57 -37 -43.6 0.01 95 -16.7 0.15 98 9.00 -22.8 0.07 -55 14.9 5.55 -51 -43.3 0.01 86 -18.2 0.12 87 9.50 -19.9 0.1 -74 14.8 5.52 -65 -43.2 0.01 77 -19.7 0.1 74 10.00 -17.7 0.13 -88 14.8 5.49 -77 -43.1 0.01 70 -21.4 0.09 60 10.50 -16.1 0.16 -100 14.7 5.45 -90 -42.9 0.01 63 -22.8 0.07 43 11.00 -14.8 0.18 -110 14.7 5.43 -101 -42.8 0.01 57 -24.3 0.06 23 11.50 -13.9 0.2 -120 14.7 5.41 -113 -42.5 0.01 52 -25.1 0.06 1 12.00 -13.2 0.22 -128 14.6 5.38 -124 -42.5 0.01 45 -25.1 0.06 -22 12.50 -12.6 0.23 -136 14.6 5.37 -134 -42.3 0.01 40 -24.5 0.06 -44 13.00 -12.2 0.25 -143 14.6 5.37 -145 -42.1 0.01 34 -23.3 0.07 -60 13.50 -11.9 0.26 -151 14.6 5.38 -155 -41.9 0.01 31 -22.2 0.08 -73 14.00 -11.6 0.26 -159 14.7 5.4 -166 -41.7 0.01 24 -21.3 0.09 -85 14.50 -11.5 0.27 -166 14.7 5.42 -176 -41.6 0.01 19 -20.7 0.09 -95 15.00 -11.4 0.27 -174 14.7 5.46 174 -41.4 0.01 15 -19.8 0.1 -105 15.50 -11.4 0.27 177 14.8 5.49 163 -41.3 0.01 9 -19.1 0.11 -113 16.00 -11.5 0.27 168 14.9 5.54 153 -41.1 0.01 3 -18.4 0.12 -121 16.50 -11.7 0.26 157 14.9 5.58 142 -40.8 0.01 0 -17.7 0.13 -126 17.00 -11.9 0.25 146 15.0 5.63 131 -40.8 0.01 -7 -17.2 0.14 -132 17.50 -12.2 0.25 132 15.1 5.66 120 -40.8 0.01 -12 -16.7 0.15 -138 18.00 -12.4 0.24 116 15.1 5.71 109 -40.5 0.01 -16 -16.2 0.16 -143 18.50 -12.4 0.24 98 15.2 5.75 97 -40.4 0.01 -23 -15.8 0.16 -148 19.00 -12.2 0.25 77 15.2 5.75 85 -40.3 0.01 -29 -15.4 0.17 -154 19.50 -11.5 0.27 56 15.2 5.73 73 -40.1 0.01 -35 -14.9 0.18 -158 20.00 -10.5 0.3 34 15.0 5.65 60 -39.9 0.01 -42 -14.6 0.19 -163 20.50 -9.2 0.35 14 14.8 5.51 46 -39.9 0.01 -48 -14.0 0.2 -166 21.00 -7.9 0.4 -5 14.5 5.31 33 -40.0 0.01 -55 -13.8 0.2 -172 21.50 -6.7 0.46 -21 14.1 5.05 19 -39.8 0.01 -63 -13.5 0.21 -176 22.00 -5.7 0.52 -36 13.5 4.72 5 -40.3 0.01 -72 -13.1 0.22 179 note: 1. data obtained from on-wafer measurements
6 biasing and operation the ammc- 5618 is normally biased with a single positive drain supply connected to both v d1 and v d2 bond pads as shown in figure 19(a). the recommended supply voltage is 3 to 5 v. no ground wires are required because all ground connections are made with plated through- holes to the backside of the device. gate bias pads (v g1 & v g2 ) are also provided to allow adjustments in gain, rf output power, and dc power dissipation, if necessary. no connection to the gate pad is needed for single drain- bias operation. however, for custom applications, the dc current flowing through the input and/ or output gain stage may be adjusted by applying a voltage to the gate bias pad(s) as shown in figure 19(b). a negative gate- pad voltage will decrease the drain current. the gate- pad voltage is approximately zero volt during operation with no dc gate supply. refer to the absolute maximum ratings table for allowed dc and thermal conditions. assembly techniques the backside of the ammc- 5618 chip is rf ground. for microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier or heatsink) using electrically conductive epoxy[1]. for best performance, the topside of the mmic should be brought up to the same height as the circuit surrounding it. this can be accomplished by mounting a gold plated metal shim (same length and width as the mmic) under the chip, which is of the correct thickness to make the chip and adjacent circuit coplanar. the amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. the ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. the location of the rf bond pads is shown in figure 20. note that all the rf input and output ports are in a ground- signal- ground configuration. rf connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. a single bond wire is sufficient for signal connections, however double- bonding with 0.7 mil gold wire or the use of gold mesh[2] is recommended for best performance, especially near the high end of the frequency range. thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55db for a duration of 76 8 ms. a guided wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recommended wire bond stage temperature is 150 2 c. caution should be taken to not exceed the absolute maximum rating for assembly temperature and time. the chip is 100 m thick and should be handled with care. this mmic has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up die with vacuum on die center.) this mmic is also static sensitive and esd handling precautions should be taken. notes: 1. ablebond 84-1 lm1 silver epoxy is recommended. 2. buckbee-mears corporation, st. paul, mn, 800-262-3824
7 figure 18. ammc-5618 schematic figure 19. ammc-5618 assembly diagram rf input v g1 v g2 rf output matching matching feedback network matching v d1 v d2 gold plated shim 100 pf chip capacitor rf input rf output to power supply to v g2 power supply to v g1 power supply bonding island or small chip-capacitor gold plated shim 100 pf chip capacitor rf input rf output to power supply (a) (b)
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. data subject to change. copyright 2003-2005 agilent technologies, inc. obsoletes 5989-3210en september 21, 2005 5989-3927en figure 20. ammc-5618 bond pad lo cations (dimensions in microns) ordering information: ammc-5618-w10 = 10 devices per tray AMMC-5618-W50 = 50 devices per tray 0 0 920 530 0 0 530 143 573 355 79 593 920 rf rf vd1 vg1 vd2 vg2 gnd
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