2n5680 silicon pnp transistor n sgs-thomson preferred salestype n npn transistor applications n general purpose switching n general purpose amplifiers description the 2n5680 is high voltage silicon epitaxial planar pnp transistors in jedec to-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. the 2n5680 complementary npn type is the 2n5682. internal schematic diagram june 1997 to-39 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -120 v v ceo collector-emitter voltage (i b = 0) -120 v v ebo emitter-base voltage (i c = 0) -4 v i c collector current -1 a i b base current -0.5 a p tot total dissipation at t c 25 o c10w p tot total dissipation at t amb 50 o c1w t stg storage temperature -65 to 200 o c t j max. operating junction temperature 200 o c 1/4
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 17.5 175 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) for 2n5679 v ce = -100 v for 2n5680 v ce = -120 v t c = 150 o c for 2n5679 v ce = -100 v for 2n5680 v ce = -120 v -1 -1 -1 -1 m a m a m a m a i cbo collector cut-off current (i e = 0) for 2n5679 v cb = -100 v for 2n5680 v cb = -120 v -1 -1 m a m a i ceo collector cut-off current (i b = 0) for 2n5679 v cb = -70 v for 2n5680 v cb = -80 v -10 -10 m a m a i ebo emitter cut-off current (i c = 0) v eb = -4 v -1 m a v ceo(sus) * collector-emitter sustaining voltage i c = -10 ma for 2n5679 for 2n5680 -100 -120 v v v ce(sat) * collector-emitter saturation voltage i c = -250 ma i b = -25 ma i c = -500 ma i b = -50 ma i c = -1 a i b = -200 ma -0.6 -1 -2 v v v v be * base-emitter voltage i c = -250 ma v ce = -2 v -1 v h fe * dc current gain i c = -250 ma v ce = -2 v i c = -1 a v ce = -2 v 40 5 150 h fe small signal current gain i c = -0.2 a v ce = -1.5 v f = 1khz 40 f t transition frequency i c = -100 ma v ce = -10 v f =10mhz 30 mhz c cbo collector base capacitance i e = 0 v cb = -20 v f = 1mhz 50 pf * pulsed: pulse duration = 300 m s, duty cycle 1.5 % 2n5680 2/4
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b0.490.019 d6.60.260 e8.50.334 f9.40.370 g 5.08 0.200 h1.20.047 i0.90.035 l45 o (typ.) l g i d a f e b h p008b to-39 mechanical data 2n5680 3/4
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . 2n5680 4/4
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