surmount tm low and medium & high barrier silicon schottky diodes: anti - parallel pair m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 1 v2 MA4E2508 series features extremely low parasitic capitance and inductance surface mountable in microwave circuits, no wirebonds required rugged hmic construction with polyimide scratch protection reliable, multilayer metalization with a diffusion barrier, 100% stabiliz ation bake (300 c, 16 hours) lower susceptibility to esd damage description and applications the MA4E2508 surmount ? anti - paral lel diode series are silicon low, medium & high barrier schottky d e vices fabricated with the patented heterolithic microwave integrated circuit (hmic) process. hmic circuits consist of silicon p edestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, micro strip transmission medium. the combination of silicon and glass allows hmic devices to have excellent loss and power dissipatio n characteristics in a low profile, reliable device. the surmount schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. the surmount structure employs very low resistance silicon vias to connect the schottky contacts to the metalized mounting pads on the bottom surface of the chip. these devices are reliable, repeatable, and a lower cost performance solution to conventional devices. they have lo wer susceptibility to electrostatic discharge than conventional beam lead schottky diodes. the multi - layer metalization emp loyed in the fabrication of the surmount schottky junctions includes a platinum diffusion barrier, which permits all devices t o be subjected to a 16 - hour non - operating stabilization bake at 300 c. the ? 0502 ? outline allows for surface mount placeme nt and multi - functional polarity orientations. case style 1112 dim inches millimeters min. max. min. max. a 0.0445 0.0465 1.130 1.180 b 0.0169 0.0189 0.430 0.480 c 0.0040 0.0080 0.102 0.203 d sq. 0.0128 0.325 e 0.0128 0.0148 0.325 0.375 0.0148 0.375 a a b c d e d equivalent circuit the MA4E2508 family of surmount schottky diodes are recommended for use in microwave circuits through ku band frequencies for lo wer power applications such as mixers, sub - harmonic mixers, detectors and limiters. the hmic construction facilitates the dire ct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a hard or soft substrate circuit with solder.
surmount tm low and medium & high barrier silicon schottky diodes: anti - parallel pair m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 2 v2 MA4E2508 series electrical specifications @ 25 c handling all semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. the use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. the top surface of the die has a protective polyimide coating to minimize damage. the rugged construction of these surmount devices allows the use of standard handling and die attach techniques. it is important to note that industry standard electrostatic discharge (esd) cont rol is required at all times, due to the sensitive nature of schottky junctions. bulk handling should insure that abrasion an d die bonding die attach for these devices is made simple through the use of surface mount die attach technology. mounting pads ar e conveniently located on the bottom surface of these devices, and are opposite the active junction. the devices are well suite d for higher temperature solder attachment onto hard substrates. 80au/20sn and sn63/pb37/ag2 solders are acceptable for usage. for hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. when soldering to sof t substrates, it is recommended to use a lead - tin interface at the circuit board mounting pads. position the die so that its mo unting pads are aligned with the circuit board mounting pads. reflow the solder paste by applying equal heat to the circuit at b oth die - mounting pads. the solder joint must not be made one at a time, creating un - equal heat flow and thermal stress. solder r eflow should not be performed by causing heat to flow through the top surface of the die. since the hmic glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed. absolute maximum ratings @ 25 c (unless otherwise noted) 1 1. operation of this device above any one of these parameters may cause permanent damage. parameter absolute maximum operating temperature - 40 c to +125 c storage temperature - 40 c to +150 c junction temperature +175 c forward current 20 ma reverse voltage 5 v rf c.w. incident power + 20 dbm rf & dc dissipated power 50 mw rt is the dynamic slope resistance where rt = rs + rj , where rj =26 / idc ( idc is in ma) and rs is the ohmic resistance. model number type recommended frequency range vf @ 1 ma ( mv ) ct @ 0 v ( pf ) rt slope resistance ( vf1 - vf2 ) / (10.5ma - 9.5ma ) ( w ) ma4e250 8 l low barrier dc - 18 ghz 330 max 300 typ 0.24 max 0.18 typ 16 typ 20 max ma4e250 8 m medium barrier dc - 18 ghz 4 7 0 max 4 2 0 typ 0.24 max 0.18 typ 12 typ 18 max ma4e250 8h high barrier dc - 18 ghz 700 max 65 0 typ 0.24 max 0.18 typ 6 typ 8 max max forward voltage difference d vf @ 1 ma: 10 mv
surmount tm low and medium & high barrier silicon schottky diodes: anti - parallel pair m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 3 v2 MA4E2508 series MA4E2508l low barrier spice parameters (per diode)* is (na) rs ( w ) n cj0 ( pf ) m ik (ma) cpar (pf) vj (v) fc bv (v) ibv (ma) 26 12.8 1.20 1.0 e - 2 0.5 14 9.0 e - 2 8.0 e - 2 0.5 5.0 1.0 e - 2 is (na) rs ( w ) n cj0 ( pf ) m ik (ma) cpar (pf) vj (v) fc bv (v) ibv (ma) 5 e - 1 9.6 1.20 1.0 e - 0 2 0.5 10 9.0 e - 2 8.0 e - 2 0.5 5.0 1.0 e - 2 MA4E2508m medium barrier spice parameters (per diode)* circuit mounting dimensions (inches) 0.020 0.020 0.013 0.020 0.020 * spice parameters ( per diode ) are based on the ma4e2502 series datasheet. ordering information part number package MA4E2508l - 1112w wafer on frame MA4E2508l - 1112 die in carrier MA4E2508l - 1112t tape/reel MA4E2508m - 1112w wafer on frame MA4E2508m - 1112 die in carrier MA4E2508m - 1112t tape/reel MA4E2508h - 1112w wafer on frame MA4E2508h - 1112 die in carrier MA4E2508h - 1112t tape/reel is (na) rs ( w ) n cj0 ( pf ) m ik (ma) cpar (pf) vj (v) fc bv (v) ibv (ma) 5 .7 e - 2 6.5 1.20 1.0 e - 0 2 0.5 4 9.0 e - 2 8.0 e - 2 0.5 5.0 1.0 e - 2 MA4E2508h medium barrier spice parameters (per diode)*
surmount tm low and medium & high barrier silicon schottky diodes: anti - parallel pair m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 4 v2 MA4E2508 series MA4E2508 schematic per diode schematic values per diode model number ls (nh) rs ( w ) rj ( w ) ct ( pf ) MA4E2508l 0.8 12.8 26 / idc 0.09 MA4E2508m 0.8 9.6 26 / idc 0.09 MA4E2508 h 0.8 6.5 26 / idc 0.09 ls rs rj ct
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