?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b frs430d, frs430r, frs430h 3a, 500v, 2.52 ohm, rad hard, n-channel power mosfets package to-257aa symbol caution: beryllia warning per mil-s-19500 refer to package specifications. g d s features 3a, 500v, rds(on) = 2.52 ? second generation rad hard mosfet results from new design concepts gamma - meets pre-rad speci?ations to 100krad(si) - de?ed end point specs at 300krad(si) and 1000krad(si) - performance permits limited use to 3000krad(si) gamma dot - survives 3e9rad(si)/sec at 80% bvdss typically - survives 2e12 typically if current limited to idm photo current - 8.0na per-rad(si)/sec typically neutron - pre-rad speci?ations for 3e12 neutrons/cm 2 - usable to 3e13 neutrons/cm 2 description fairchild has designed a series of second generation hardened power mosfets of both n and p channel enhancement types with ratings from 100v to 500v, 1a to 60a, and on resistance as low as 25m ? . total dose hardness is offered at 100k rad(si) and 1000krad(si) with neutron hardness ranging from 1e13n/cm 2 for 500v product to 1e14n/cm 2 for 100v product. dose rate hardness (gamma dot) exists for rates to 1e9 without current limiting and 2e12 with cur- rent limiting. this mosfet is an enhancement-mode silicon-gate power ?ld effect transistor of the vertical dmos (vdmos) structure. it is specially designed and processed to exhibit minimal characteristic changes to total dose (gamma) and neutron (n o ) exposures. design and processing efforts are also directed to enhance survival to heavy ion (see) and/or dose rate (gamma dot) exposure. this part may be supplied as a die or in various packages other than shown above. reliability screening is available as either non tx (commercial), tx equivalent of mil-s-19500, txv equivalent of mil-s-19500, or space equivalent of mil-s-19500. contact the fairchild high-reliability marketing group for any desired deviations from the data sheet. absolute maximum ratings (tc = +25 o c) unless otherwise speci?d frs430d, r, h units drain-source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vds 500 v drain-gate voltage (rgs = 20k ? ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vdgr 500 v continuous drain current tc = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .id tc = +100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .id 3 2 a a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . idm 9 a gate-source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vgs 20 v maximum power dissipation tc = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pt tc = +100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pt derated above +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 20 0.40 w w w/ o c inductive current, clamped, l = 100 h, (see test figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ilm 9 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . is 3 a pulsed source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ism 9 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tjc, tstg -55 to +150 o c lead temperature (during soldering) distance > 0.063 in. (1.6mm) from case, 10s max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tl 300 o c december 2001
?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b pre-radiation electrical speci?ations tc = +25 o c, unless otherwise speci?d parameter symbol test conditions limits units min max drain-source breakdown volts bvdss vgs = 0, id = 1ma 500 - v gate-threshold volts vgs(th) vds = vgs, id = 1ma 2.0 4.0 v gate-body leakage forward igssf vgs = +20v - 100 na gate-body leakage reverse igssr vgs = -20v - 100 na zero-gate voltage drain current idss1 idss2 idss3 vds = 500v, vgs = 0 vds = 400v, vgs = 0 vds = 400v, vgs = 0, tc = +125 o c - - - 1 0.025 0.25 ma rated avalanche current iar time = 20 s-9a drain-source on-state volts vds(on) vgs = 10v, id = 3a - 7.94 v drain-source on resistance rds(on) vgs = 10v, id = 2a - 2.52 ? turn-on delay time td(on) vdd = 250v, id = 3a - 34 ns rise time tr pulse width = 3 s-60 turn-off delay time td(off) period = 300 s, rg = 25 ? - 224 fall time tf 0 vgs 10 (see test circuit) - 60 gate-charge threshold qg(th) vdd = 250v, id = 3a igs1 = igs2 0 vgs 20 0.5 3 nc gate-charge on state qg(on) 17 68 gate-charge total qgm 32 128 plateau voltage vgp 3 12 v gate-charge source qgs 2 8 nc gate-charge drain qgd 10 40 diode forward voltage vsd id = 3a, vgd = 0 0.6 1.8 v reverse recovery time tt i = 3a; di/dt = 100a/ s - 1600 ns junction-to-case r jc - 2.5 o c/w junction-to-ambient r ja free air operation - 60 figure 1. resistive switching test circuit figure 2. unclamped energy test circuit v ds dut r gs 0v v gs = 12v v dd r l t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0v 50 ? 50 ? 50v-150v i as + - electronic switch opens when i as is reached current transformer frs430d, frs430r, frs430h
?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b post-radiation electrical speci?ations tc = +25 o c, unless otherwise speci?d parameter symbol type test conditions limits units min max drain-source breakdown volts (note 4, 6) bvdss frs430d, r vgs = 0, id = 1ma 500 - v (note 5, 6) bvdss frs430h vgs = 0, id = 1ma 475 - v gate-source threshold volts (note 4, 6) vgs(th) frs430d, r vgs = vds, id = 1ma 2.0 4.0 v (note 3, 5, 6) vgs(th) frs430h vgs = vds, id = 1ma 1.5 4.5 v gate-body leakage forward (note 4, 6) igssf frs430d, r vgs = 20v, vds = 0 - 100 na (note 5, 6) igssf frs430h vgs = 20v, vds = 0 - 200 na gate-body leakage reverse (note 2, 4, 6) igssr frs430d, r vgs = -20v, vds = 0 - 100 na (note 2, 5, 6) igssr frs430h vgs = -20v, vds = 0 - 200 na zero-gate voltage drain current (note 4, 6) idss frs430d, r vgs = 0, vds = 400v - 25 a (note 5, 6) idss frs430h vgs = 0, vds = 400v - 100 a drain-source on-state volts (note 1, 4, 6) vds(on) frs430d, r vgs = 10v, id = 3a - 7.94 v (note 1, 5, 6) vds(on) frs430h vgs = 16v, id = 3a - 11.91 v drain-source on resistance (note 1, 4, 6) rds(on) frs430d, r vgs = 10v, id = 2a - 2.52 ? (note 1, 5, 6) rds(on) frs430h vgs = 14v, id = 2a - 3.78 ? notes: 1. pulse test, 300 s max 2. absolute value 3. gamma = 300krad(si) 4. gamma = 10krad(si) for ?? 100krad(si) for ?? neutron = 3e12 5. gamma = 1000krad(si). neutron = 3e12 6. insitu gamma bias must be sampled for both vgs = +10v, vds = 0v and vgs = 0v, vds = 80% bvdss 7. gamma data taken 10/29/90 on ta 17635 devices by ge astro space; emc/survivability laboratory; king of prussia, pa 19401 8. single event drain burnout testing by titus, j.l., et al of nwsc, crane, in at brookhaven nat. lab. dec 11-14, 1989 9. neutron derivation, fairchild application note an-8831, oct. 1988 frs430d, frs430r, frs430h
?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b typical performance characteristics frs430d, frs430r, frs430h
?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b typical performance characteristics (continued) frs430d, frs430r, frs430h
?001 fairchild semiconductor corporation frs430d, frs430r, frs430h rev. b frs430d, frs430r, frs430h rad hard data packages - fairchild power transistors txv equivalent 1. rad hard txv equivalent - standard data package a. certi?ate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certi?ate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - precondition lot traveler - pre and post burn-in read and record data d. group a - attributes data sheet - group a lot traveler e. group b - attributes data sheet - group b lot traveler - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - group c lot traveler - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - group d lot traveler - pre and post rad read and record data class s - equivalents 1. rad hard ? equivalent - standard data package a. certi?ate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning attributes data sheet hi-rel lot traveler htrb - hi temp gate stress post reverse bias data and delta data htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. ? equivalent - optional data package a. certi?ate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - hi-rel lot traveler - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - hi-rel lot traveler - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - hi-rel lot traveler - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - hi-rel lot traveler - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - hi-rel lot traveler - pre and post radiation data
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
|
