smbt 3904s semiconductor group sep-07-1998 1 npn silicon switching transistor array high dc current gain: 0.1ma to 100ma low collector-emitter saturation voltage two ( galvanic) internal isolated transistors with high matching in one package complementary type: smbt 3906s (pnp) vps05604 6 3 1 5 4 2 type marking ordering code package pin configuration 1/4=e1/e2 s1a smbt 3904s 2/5=b1/b2 3/6=c2/c1 sot-363 q62702-a1201 maximum ratings unit parameter symbol value collector-emitter voltage v ceo v 40 60 collector-base voltage v cbo emitter-base voltage 6 v ebo dc collector current i c ma 200 250 mw total power dissipation, t s = 115 c p tot c t j junction temperature 150 storage temperature t st g - 65...+150 thermal resistance junction ambient 1) r thja 275 k/w junction - soldering point r thjs 140 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu semiconductor group 1 1998-11-01
smbt 3904s semiconductor group sep-07-1998 2 electrical characteristics at t a =25c, unless otherwise specified. parameter symbol unit values typ. max. min. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo v 40 - - collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo 60 - - v (br)ebo - - 6 emitter-base breakdown voltage i e = 10 a, i c = 0 collector cutoff current v cb = 30 v, i e = 0 na i cbo - - 50 dc current gain 1) i c = 100 a, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 50 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 40 70 100 60 30 - - - - - - - 300 - - - collector-emitter saturation voltage1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v cesat - - - - 0.2 0.3 v base-emitter saturation voltage 1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v besat 0.65 - - - 0.85 0.95 1) pulse test: t < 300 m s; d < 2% semiconductor group 2 1998-11-01
smbt 3904s semiconductor group sep-07-1998 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. ac characteristics f t 300 - mhz - transition frequency i c = 10 ma, v ce = 20 v, f = 100 mhz c cb - - collector-base capacitance v cb = 5 v, f = 1 mhz pf 4 c eb - - 8 emitter-base capacitance v eb = 0.5 v, f = 1 mhz h 11e 1 10 - short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz k w h 12e 0.5 8 10 -4 - open-circuit reverse voltage transfer ratio i c = 1 ma, v ce = 10 v, f = 1 khz h 21e 100 - short-circuit forward current transfer ratio i c = 1 ma, v ce = 10 v, f = 1 khz - 400 h 22e 1 - 40 m s open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz noise figure i c = 100 a, v ce = 5 v, r s = 1 k w , f = 1 khz, d f = 200 hz f - - 5 db delay time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t d - - 35 ns rise time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t r - - 35 storage time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t stg - - 200 fall time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t f - - 50 semiconductor group 3 1998-11-01
smbt 3904s semiconductor group sep-07-1998 4 test circuit delay and rise time ehn00061 275 10 k +3.0 v 0 -0.5 v <4.0 pf c +10.9 v d = 2% 300 ns <1.0 ns w w storage time and fall time ehn00062 275 10 +3.0 v 0 -9.1 <4.0 pf c +10.9 v d = 2% 1n916 <1.0 t 1 m s 500 10 t 1 w w v k ns << semiconductor group 4 1998-11-01
smbt 3904s semiconductor group sep-07-1998 5 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot kei n t a t s permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 semiconductor group 5 1998-11-01
smbt 3904s semiconductor group sep-07-1998 6 saturation voltage i c = f ( v besat , v cesat ) h fe = 10 ehp00756 2 0 v be sat c 10 1 10 0 5 i v ma 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce dc current gain h fe = f ( i c ) v ce = 10v, normalized ehp00765 10 10 ma h c 5 fe 10 1 0 10 -1 5 10 10 10 -1 0 1 2 i 125 c 25 c -55 c 55 2 short-circuit forward current transfer ratio h 21e = f ( i c ) v ce = 10v, f = 1mhz ehp00759 10 10 ma h c 5 21e 10 3 2 10 1 5 10 10 -1 0 1 i 5 open-circuit output admittance h 22e = f ( i c ) v ce = 10v, f = 1mhz ehp00760 10 10 ma h c 5 22e 10 2 1 10 0 5 10 10 -1 0 1 i 5 s m semiconductor group 6 1998-11-01
smbt 3904s semiconductor group sep-07-1998 7 storage time t stg = f ( i c ) ehp00762 10 ma t c s 10 1 10 0 10 10 01 2 i 55 ns 3 10 10 2 10 3 h fe = 20 10 25 c 125 c 10 = 20 fe h delay time t d = f ( i c ) rise time t r = f ( i c ) ehp00761 10 ma t c r 10 1 10 0 10 10 01 2 i 55 ns r t t d , 3 10 d t 10 2 10 3 = 3 v cc v 0 v v = 2 v be 40 v 15 v h fe = 10 fall time t f = f ( i c ) rise time t r = f ( i c ) ehp00764 10 ma t c r 10 1 10 0 10 10 01 2 i 55 ns 3 10 10 2 10 3 25 c 125 c cc v = 40 v = 10 fe h semiconductor group 7 1998-11-01
smbt 3904s semiconductor group sep-07-1998 8 input impedance h 11e = f ( i c ) v ce = 10v, f = 1khz 10 ehp00757 -1 1 10 ma -1 10 2 10 5 5 10 0 10 0 c 11e h i 1 10 5 w k open-circuit reverse voltage transfer ratio h 12e = f ( i c ) v ce = 10v, f = 1khz ehp00758 10 ma h c 12e 10 -5 5 10 10 -1 0 1 i 5 10 -4 10 -3 semiconductor group 8 1998-11-01
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