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? 2005 microchip technology inc. ds21889c-page 1 mcp111/112 features ? ultra-low supply current: 1.75 a (max.) ? precision monitoring options of: - 1.90v, 2.32v, 2.63v, 2.90v, 2.93v, 3.08v, 4.38v and 4.63v ? resets microcontroller in a power-loss event ? active-low v out pin: - mcp111 active-low, open-drain - mcp112 active-low, push-pull ? available in sot23-3, to-92 and sc-70 packages ? temperature range: - extended: -40c to +125c ( except mcp1xx-195 ) - industrial: -40c to +85c ( mcp1xx-195 only ) ? pb-free devices applications ? critical microcontrol ler and microprocessor power-monitoring applications ? computers ? intelligent instruments ? portable battery-powered equipment description the mcp111/112 are voltage-detecting devices designed to keep a microcontroller in reset until the system voltage has stabilized at the appropriate level for reliable system operat ion. these devices also operate as protection from brown-out conditions when the system supply voltage drops below the specified threshold voltage level. eight different trip voltages are available. package types block diagram table 1: device features sot23-3/sc-70 v dd v out mcp111/112 1 2 3 v ss v ss v out to-92 v dd v dd comparator + ? output driver v out band gap reference v ss device output reset delay (typ) package pin out (pin # 1, 2, 3) comment type pull-up resistor mcp111 open-drain external no v out , v ss , v dd mcp112 push-pull no no v out , v ss , v dd mcp102 push-pull no 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds21906) mcp103 push-pull no 120 ms v ss , rst , v dd see mcp102/103/121/131 data sheet (ds21906) mcp121 open-drain external 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds21906) mcp131 open-drain internal (~95 k ) 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds21906) micropower voltage detector
mcp111/112 ds21889c-page 2 ? 2005 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings? v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0v input current (v dd ) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 ma output current (rst ) . . . . . . . . . . . . . . . . . . . . . . . . . .10 ma rated rise time of v dd . . . . . . . . . . . . . . . . . . . . . . 100v/s all inputs and outputs (except rst ) w.r.t. v ss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6v to (v dd + 1.0v) rst output w.r.t. v ss . . . . . . . . . . . . . . . . . . . -0.6v to 13.5v storage temperature . . . . . . . . . . . . . . . . . . .65c to + 150c ambient temp. with power applied . . . . . . . -40c to + 125c maximum junction temp. with power applied . . . . . . . . 150c esd protection on all pins . . . . . . . . . . . . . . . . . . . . . . . . . 2kv ? notice: stresses above those listed under ?maximum ratings? may cause permanent dam age to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ), t a = -40c to +125c. parameters sym min typ max units conditions operating voltage range v dd 1.0 ? 5.5 v specified v dd value to v out low v dd 1.0 ? v i rst = 10 a, v rst < 0.2v operating current i dd ? < 1 1.75 a v dd trip point mcp1xx-195 v trip 1.872 1.900 1.929 v t a = +25c (note 1) 1.853 1.900 1.948 v t a = -40c to +85c (note 2) mcp1xx-240 2.285 2.320 2.355 v t a = +25c (note 1) 2.262 2.320 2.378 v note 2 mcp1xx-270 2.591 2.630 2.670 v t a = +25c (note 1) 2.564 2.630 2.696 v note 2 mcp1xx-290 2.857 2.900 2.944 v t a = +25c (note 1) 2.828 2.900 2.973 v note 2 mcp1xx-300 2.886 2.930 2.974 v t a = +25c (note 1) 2.857 2.930 3.003 v note 2 mcp1xx-315 3.034 3.080 3.126 v t a = +25c (note 1) 3.003 3.080 3.157 v note 2 mcp1xx-450 4.314 4.380 4.446 v t a = +25c (note 1) 4.271 4.380 4.490 v note 2 mcp1xx-475 4.561 4.630 4.700 v t a = +25c (note 1) 4.514 4.630 4.746 v note 2 v dd trip point tempco t tpco ? 100 ? ppm/ c note 1: trip point is 1.5% from typical value. 2: trip point is 2.5% from typical value. 3: this specification allows this device to be used in picmicro ? microcontroller applications t hat require the in-circuit serial programming? (icsp?) feature (see device-specific progr amming specifications for voltage requirements). this specification does no t allow a continuos high voltage to be present on the open drain output pin (v out ). the total time that the v out pin can be above the maximum device operational voltage (5.5v) is 100s. current into the v out pin should be limited to 2 ma; it is recommended that the device operational temperature be maintained between 0c to 70c (+25c preferred). for additional in formation please refer to figure 2-28. 4: this parameter is established by characterization and not 100% tested.
? 2005 microchip technology inc. ds21889c-page 3 mcp111/112 threshold hysteresis ( min. = 1%, max = 6%) mcp1xx-195 v hys 0.019 ? 0.114 v t a = +25c mcp1xx-240 0.023 ? 0.139 v mcp1xx-270 0.026 ? 0.158 v mcp1xx-290 0.029 ? 0.174 v mcp1xx-300 0.029 ? 0.176 v mcp1xx-315 0.031 ? 0.185 v mcp1xx-450 0.044 ? 0.263 v mcp1xx-475 0.046 ? 0.278 v v out low-level output voltage v ol ??0.4vi ol = 500 a, v dd = v trip(min) v out high-level output voltage v oh v dd ? 0.6 ? ? v i oh = 1 ma, for only mcp112 (push-pull output) open-drain high voltage on output v odh ? ? 13.5 (3) v mcp111 only, v dd = 3.0v, time voltage > 5.5v applied 100s, current into pin limited to 2 ma, +25c operation recommended note 3, note 4 open-drain output leakage current ( mcp111 only) i od ?0.1?a dc characteristics (continued) electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ), t a = -40c to +125c. parameters sym min typ max units conditions note 1: trip point is 1.5% from typical value. 2: trip point is 2.5% from typical value. 3: this specification allows this device to be used in picmicro ? microcontroller applications that require the in-circuit serial programming? (icsp?) feature (see device-specific progr amming specifications for voltage requirements). this specification does no t allow a continuos high voltage to be present on the open drain output pin (v out ). the total time that the v out pin can be above the maximum device operational voltage (5.5v) is 100s. current into the v out pin should be limited to 2 ma; it is recommended that the device operational temperature be maintained between 0c to 70c (+25c preferred). for additional in formation please refer to figure 2-28. 4: this parameter is established by characterization and not 100% tested.
mcp111/112 ds21889c-page 4 ? 2005 microchip technology inc. figure 1-1: timing diagram. ac characteristics temperature characteristics electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ), t a = -40c to +125c. parameters sym min typ max units conditions v dd detect to v out inactive t rpu ?90 ? s figure 1-1 and c l = 50 pf (note 1) v dd detect to v out active t rpd ?130 ? s v dd ramped from v trip(max) + 250 mv down to v trip(min) ? 250 mv, per figure 1-1 , c l = 50 pf (note 1) v out rise time after v out active t rt ?5 ? s for v out 10% to 90% of final value per figure 1-1 , c l = 50 pf (note 1) note 1: these parameters are for design guidance only and are not 100% tested. electrical specifications: unless otherwise noted, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ), t a = -40c to +125c. parameters sym min typ max units conditions temperature ranges specified temperature range t a -40 ? +85 c mcp1xx-195 specified temperature range t a -40 ? +125 c except mcp1xx-195 maximum junction temperature t j ? ? +150 c storage temperature range t a -65 ? +150 c package thermal resistances thermal resistance, 3l-sot23 ja ?336 ?c/w thermal resistance, 3l-sc-70 ja ?340 ?c/w thermal resistance, 3l-to-92 ja ? 131.9 ? c/w 1v 1v v trip v dd v out t rpu v oh t rt t rpd v ol
? 2005 microchip technology inc. ds21889c-page 5 mcp111/112 2.0 typical performance curves note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-1: i dd vs. temperature ( mcp111-195 ). figure 2-2: i dd vs. temperature ( mcp112-300 ). figure 2-3: i dd vs. temperature ( mcp112-475 ). figure 2-4: i dd vs. v dd ( mcp111-195 ). figure 2-5: i dd vs. v dd ( mcp112-300 ). figure 2-6: i dd vs. v dd ( mcp112-475 ). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purpose s only. the performance characteristics listed herein are not tested or guaranteed. in so me graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v 5.5v mcp111-195 0 0.2 0.4 0.6 0.8 1 1.2 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v mcp112-300 5.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v 5.5v mcp112-475 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i dd (ua) -40c +25c +85c +125c mcp111-195 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.02.03.04.05.06.0 v dd (v) i dd (ua) mcp112-300 -40c +25c +85c +125c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i dd (ua) mcp112-475 -40c +25c +85c +125c
mcp111/112 ds21889c-page 6 ? 2005 microchip technology inc. note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k (only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-7: v trip and v hyst vs. temperature ( mcp111-195 ). figure 2-8: v trip and v hyst vs. temperature ( mcp112-300 ). figure 2-9: v trip and v hyst vs. temperature ( mcp112-475 ). figure 2-10: v ol vs. i ol ( mcp111-195 @v dd = 1.7v). figure 2-11: v ol vs. i ol ( mcp112-300 @v dd = 2.7v). figure 2-12: v ol vs. i ol ( mcp112-475 @v dd = 4.4v). 1.895 1.900 1.905 1.910 1.915 1.920 1.925 1.930 1.935 1.940 1.945 1.950 -60 -10 40 90 140 temperature (c) v trip (v) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 hyst (v) v trip , v decreasing v trip , v increasing v hys , hysteresis mcp111-195 max temp is +85c 2.900 2.920 2.940 2.960 2.980 3.000 3.020 3.040 -60 -10 40 90 140 temperature (c) v trip (v) 0.082 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.098 0.100 hyst (v) mcp112-300 v trip , v decreasing v trip , v increasing v hys , hysteresis 4.580 4.600 4.620 4.640 4.660 4.680 4.700 4.720 4.740 4.760 4.780 4.800 -60 -20 20 60 100 140 temperature (c) v trip (v) 0.100 0.110 0.120 0.130 0.140 0.150 0.160 0.170 0.180 hyst (v) mcp112-475 v trip , v decreasing v trip , v increasing v hys , hysteresis 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) -40c +25c +85c +125c mcp111-195 v dd = 1.7v 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) mcp112-300 v dd = 2.7v -40c +25c +85c +125c 0.000 0.010 0.020 0.030 0.040 0.050 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) mcp112-475 v dd = 4.4v -40c +25c +85c +125c
? 2005 microchip technology inc. ds21889c-page 7 mcp111/112 note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-13: v ol vs. temperature ( mcp111-195 @ v dd = 1.7v). figure 2-14: v ol vs. temperature ( mcp112-300 @ v dd = 2.7v). figure 2-15: v ol vs. temperature ( mcp112-475 @ v dd = 4.4v). figure 2-16: v oh vs. i oh ( mcp112-300 @ v dd = 3.1v). figure 2-17: v oh vs. i oh ( mcp112-475 @ v dd = 4.8v). figure 2-18: typical transient response (25 c). 0.000 0.020 0.040 0.060 0.080 0.100 0.120 -40 0 40 80 120 temperature (c) v ol (v) i ol = 0.00 ma mcp111-195 v dd = 1.7 v i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 -40 0 40 80 120 temperature (c) v ol (v) mcp112-300 v dd = 2.7v i ol = 0.00 ma i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma 0.000 0.010 0.020 0.030 0.040 0.050 -40 0 40 80 120 temperature (c) v ol (v) i ol = 0.00 ma i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma mcp112-475 v dd = 4.4v 2.900 2.950 3.000 3.050 3.100 3.150 0.00 0.25 0.50 0.75 1.00 i ol (ma) v oh (v) -40 c +25 c +85 c +125 c mcp112-300 v dd = 3.1v 4.680 4.700 4.720 4.740 4.760 4.780 4.800 4.820 0.00 0.25 0.50 0.75 1.00 i ol (ma) v oh (v) mcp112-475 v dd = 4.8v -40 c +25 c +85 c +125 c 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 v trip (min) - v dd transient duration (s) mcp111-195 mcp112-475 mcp112-300
mcp111/112 ds21889c-page 8 ? 2005 microchip technology inc. note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-19: t rpd vs. temperature ( mcp111-195 ). figure 2-20: t rpd vs. temperature ( mcp112-300 ). figure 2-21: t rpd vs. temperature ( mcp112-475 ). figure 2-22: t rpu vs. temperature ( mcp111-195 ). figure 2-23: t rpu vs. temperature ( mcp112-300 ). figure 2-24: t rpu vs. temperature ( mcp112-475 ). 0 50 100 150 200 250 300 350 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 1.7v v dd decreasing from: 5v - 0v mcp111-195 0 20 40 60 80 100 120 140 160 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 2.7v v dd decreasing from: 5v - 0v mcp112-300 0 50 100 150 200 250 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 4.4v v dd decreasing from: 5v - 0v mcp112-475 0 50 100 150 200 250 300 350 400 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 2.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 2.8v v dd increasing from: 0v - 4.0v mcp111-195 0 20 40 60 80 100 120 140 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 3.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 3.3v v dd increasing from: 0v - 4.0v mcp112-300 0 50 100 150 200 250 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 4.9v v dd increasing from: 0v - 5.0v v dd increasing from: 0v - 5.5v mcp112-475
? 2005 microchip technology inc. ds21889c-page 9 mcp111/112 note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-25: t rt vs. temperature ( mcp111-195 ). figure 2-26: t rt vs. temperature ( mcp112-300 ). figure 2-27: t rt vs. temperature ( mcp112-475 ). figure 2-28: open-drain leakage current vs. voltage applied to v out pin ( mcp111-195 ). 20 25 30 35 40 45 50 55 60 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 2.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 2.8v v dd increasing from: 0v - 4.0v mcp111-195 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 3.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 3.3v v dd increasing from: 0v - 4.0v mcp112-300 0.0800 0.0900 0.1000 0.1100 0.1200 0.1300 0.1400 0.1500 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 4.8v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 4.9v v dd increasing from: 0v - 5.0v mcp112-475 1.e-13 1.e-12 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 01234567891011121314 pull-up voltage (v) open-drain leakage (a) 125c 25c - 40c 10m 100 1m 10 1 10n 100n 1n 100p 1p 10p 100f
mcp111/112 ds21889c-page 10 ? 2005 microchip technology inc. 3.0 pin description the descriptions of the pins are listed in table 3-1. table 3-1: pin function table pin no. symbol function sot23-3 sc-70 t0-92 11v out output state v dd falling: h = v dd > v trip l = v dd < v trip v dd rising: h = v dd > v trip + v hys l = v dd < v trip + v hys 23v ss ground reference 32v dd positive power supply
? 2005 microchip technology inc. ds21889c-page 11 mcp111/112 4.0 application information for many of today?s microcontroller applications, care must be taken to prevent low-power conditions that can cause many different system problems. the most common causes are brown-out conditions, where the system supply drops below the operating level momen- tarily. the second most comm on cause is when a slowly decaying power supply caus es the microcontroller to begin executing instructions without sufficient voltage to sustain sram, thus producing indeterminate results. figure 4-1 shows a typical application circuit. figure 4-1: typical application circuit. 4.1 v trip operation the voltage trip point (v trip ) is determined on the falling edge of v dd . the actual voltage trip point (v tripac ) will be between the minimum trip point (v tripmin ) and the maximum trip point (v tripmax ). there is a hysteresis on this trip point to remove any ?jitter? that would occur on the v out pin when the device v dd is at the trip point. figure 4-2 shows the state of the v out pin as determined by the v dd voltage. the v trip specification is for falling v dd voltages. when the v dd voltage is rising, the v out pin will not be driven high until v dd is at v trip + v hys . figure 4-2: v out operation as determined by the v trip and v hys . 2 mcp11x v dd v dd v dd v out mclr (reset input) v ss gnd picmicro ? microcontroller 3 1 r pu note 1: r pu may be required with the mcp111 due to the open-drain output. resistor r pu is not required with the mcp112. 0.1 f (1) v dd v tripmax v tripmin v tripac v tripac v tripac + v hysac v out 1v < 1 v is outside the device specifications
mcp111/112 ds21889c-page 12 ? 2005 microchip technology inc. 4.2 negative going v dd transients the minimum pulse width (time) required to cause a reset may be an important criteria in the implementa- tion of a power-on reset (por) circuit. this time is referred to as transient duration, defined as the amount of time needed for these supervisory devices to respond to a drop in v dd . the transient duration time is dependant on the magnitude of v trip ? v dd . generally speaking, the transient duration decreases with increases in v trip ? v dd . figure 4-3 shows a typical transient duration vs. reset comparator overdrive for which the mcp111/112 will not generate a reset pulse. it shows that the farther below the trip point the transient pulse goes, the duration of the pulse required to cause a reset gets shorter. figure 2-18 shows the transient response characteristics for the mcp111/112. a 0.1 f bypass cap mounted as close as possible to the v dd pin provides additional transient immunity (refer to figure 4-1). figure 4-3: example of typical transient duration waveform. 4.3 effect of temperature on time-out period (t rpu ) the time-out period (t rpu ) determines how long the device remains in the reset condition. this is affected by both v dd and temperature. the graph shown in figures 2-22, 2-23 and 2-24 show the typical response for different v dd values and temperatures. 4.4 using in picmicro ? microcontroller icsp? applications (mcp111 only) figure 4-4 shows the typical application circuit for using the mcp111 for voltage supervisory function when the picmicro microcontroller will be programmed via the in-circuit serial programming (icsp) feature. additional information is available in tb087, ?using voltage supervisors with picmicro ? microcon- troller systems which implement in-circuit serial programming?? , ds91087. figure 4-4: typical application circuit for picmicro ? microcontroller with the icsp? feature. time (s) 0v supply voltage 5v v trip(min) - v dd t trans v trip(max) v trip(min) note: it is recommended that the current into the rst pin be current limited by a 1 k resistor. v dd /v pp v dd mclr (reset input) (active-low) v ss picmicro ? mcu r pu 0.1 f 1k mcp111 v dd rst v ss
? 2005 microchip technology inc. ds21889c-page 13 mcp111/112 5.0 packaging information 5.1 package marking information 3-pin sot-23 3-lead to-92 xxxxxx xxxxxx xxxxxx ywwnnn example : mcp111 290e to ^^ 547256 part number sot-23 part number sot-23 mcp111t-195i/tt mpnn mcp112t-195i/tt mrnn mcp111t-240ett mqnn mcp112t-240ett msnn mcp111t-270e/tt mgnn mcp112t-270e/tt mann mcp111t-290e/tt nhnn mcp112t-290e/tt mbnn mcp111t-300e/tt mjnn mcp112t-300e/tt mcnn mcp111t-315e/tt mknn mcp112t-315e/tt mdnn mcp111t-450e/tt mlnn mcp112t-450e/tt menn mcp111t-475e/tt mmnn mcp112t-475e/tt mfnn example: xxnn legend: xx...x customer-specific information y year code (last digit of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 3 e
mcp111/112 ds21889c-page 14 ? 2005 microchip technology inc. package marking information (continued) 3-pin sc-70 top side part number sc-70 part number sc-70 mcp111t-195i/lb epn mcp112t-195i/lb ern mcp111t-240e/lb eqn mcp112t-240e/lb esn mcp111t-270e/lb egn mcp112t-270e/lb ean mcp111t-290e/lb ehn mcp112t-290e/lb ebn mcp111t-300e/lb ejn mcp112t-300e/lb ecn mcp111t-315e/lb ekn mcp112t-315e/lb edn mcp111t-450e/lb eln mcp112t-450e/lb een mcp111t-475e/lb emn mcp112t-475e/lb efn example: xxn top side part number sc-70 part number sc-70 mcp111t-195i/lb epnn mcp112t-195i/lb ernn mcp111t-240e/lb eqnn mcp112t-240e/lb esnn mcp111t-270e/lb egnn mcp112t-270e/lb eann mcp111t-290e/lb ehnn mcp112t-290e/lb ebnn mcp111t-300e/lb ejnn mcp112t-300e/lb ecnn mcp111t-315e/lb eknn mcp112t-315e/lb ednn mcp111t-450e/lb elnn mcp112t-450e/lb eenn mcp111t-475e/lb emnn mcp112t-475e/lb efnn example: xxnn or
? 2005 microchip technology inc. ds21889c-page 15 mcp111/112 3-lead plastic small outline transistor (tt) (sot-23) 10 5 0 10 5 0 mold draft angle bottom 10 5 0 10 5 0 mold draft angle top 0.51 0.44 0.37 .020 .017 .015 b lead width 0.18 0.14 0.09 .007 .006 .004 c lead thickness 10 5 0 10 5 0 foot angle 0.55 0.45 0.35 .022 .018 .014 l foot length 3.04 2.92 2.80 .120 .115 .110 d overall length 1.40 1.30 1.20 .055 .051 .047 e1 molded package width 2.64 2.37 2.10 .104 .093 .083 e overall width 0.10 0.06 0.01 .004 .002 .000 a1 standoff 1.02 0.95 0.88 .040 .037 .035 a2 molded package thickness 1.12 1.01 0.89 .044 .040 .035 a overall height 1.92 .076 p1 outside lead pitch (basic) 0.96 .038 p pitch 3 3 n number of pins max nom min max nom min dimension limits millimeters inches* units 2 1 p d b n e e1 l c a2 a a1 p1 * controlling parameter notes: dimensions d and e1 do not include mold flash or prot rusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: to-236 drawing no. c04-104 significant characteristic
mcp111/112 ds21889c-page 16 ? 2005 microchip technology inc. 3-lead plastic small outline transistor (lb) (sc-70) 12 8 12 8 b mold draft angle bottom 12 8 12 8 a mold draft angle top 0.40 0.15 .016 .006 b lead width 0.25 0.08 .010 .003 c lead thickness 0.41 0.10 .016 .004 l foot length 2.25 1.80 .089 .071 d overall length 1.35 1.15 .053 .045 e1 molded package width 2.40 1.80 .094 .071 e overall width .010 0.00 .0004 .000 a1 standoff 1.00 0.80 .039 .031 a2 molded package thickness 1.10 0.80 .043 .031 a overall height 1.30 bsc. p1 outside lead pitch (basic) 0.65 bsc. p pitch 3 3 number of pins max min max min dimension limits millimeters* inches units shall not exceed .005" (0.127mm) per side. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions notes: jeita (eiaj) equivalent: sc70 drawing no. c04-104 *controlling parameter l b e1 e p c p1 d 1 2 3 b a a a2 a1 .026 bsc. .051 bsc.
? 2005 microchip technology inc. ds21889c-page 17 mcp111/112 3-lead plastic transistor outline (to) (to-92) 4 3 2 4 3 2 mold draft angle bottom 6 5 4 6 5 4 0.56 0.48 0.41 .022 .019 .016 b lead width 0.51 0.43 0.36 .020 .017 .014 c lead thickness 2.41 2.29 2.16 .095 .090 .085 r molded package radius 4.95 4.64 4.32 .195 .183 .170 d overall length 4.95 4.71 4.45 .195 .186 .175 e1 overall width 3.94 3.62 3.30 .155 .143 .130 a bottom to package flat 1.27 .050 p pitch 3 3 n number of pins max nom min max nom min dimension limits millimeters inches* units r n 1 3 p l b a c 1 d 2 e1 tip to seating plane l .500 .555 .610 12.70 14.10 15.49 *controlling parameter mold draft angle top notes: dimensions d and e1 do not include mold flash or prot rusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: to-92 drawing no. c04-101
mcp111/112 ds21889c-page 18 ? 2005 microchip technology inc. 5.2 product tape and reel specifications figure 5-1: embossed carrier dimensions (8, 12, 16 and 24 mm tape only) figure 5-2: 3-lead sot-23/sc70 devi ce tape and reel specifications to p cover tape k 0 p w b 0 a 0 table 1: carrier tape/cavity dimensions case outline package type carrier dimensions cavity dimensions output quantity units reel diameter in mm w mm p mm a0 mm b0 mm k0 mm tt sot-23b 3l 8 4 3.15 2.77 1.22 3000 180 lb sc-70 3l 8 4 2.4 2.4 1.19 3000 180 standard reel component orientation device marking pin 1 user direction of feed w p
? 2005 microchip technology inc. ds21889c-page 19 mcp111/112 figure 5-3: to-92 devices device marking p seal ta p e back tape mark face user direction of feed w mark face mark face note: bent leads are for tape and reel only.
mcp111/112 ds21889c-page 20 ? 2005 microchip technology inc. notes:
? 2005 microchip technology inc. ds21889c-page 21 mcp111/112 appendix a: revision history revision c (march 2005) the following is the list of modifications: 1. added section 4.4 ?using in picmicro? microcontroller icsp? applications (mcp111 only)? on using the mcp111 in picmi- cro microcontroller icsp applications. 2. added v odh specifications in section 1.0 ?electrical ch aracteristics? (for icsp applications). 3. added figure 2-28. 4. added devices features table to page 1. 5. updated sc-70 package markings and added pb-free marking information to section 5.0 ?packaging information? . 6. added appendix a: ?revision history? . revision b (august 2004) 1. corrected package marking information in section 5.0 ?packaging information? revision a (may 2004) ? original release of this document.
mcp111/112 ds21889c-page 22 ? 2005 microchip technology inc. notes:
? 2005 microchip technology inc. ds21889c-page 23 mcp111/112 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . device: mcp111: micropower voltage detector, open-drain mcp111t: micropower voltage detector, open-drain (tape and reel) mcp112: micropower voltage detector, push-pull mcp112t: micropower voltage detector, push-pull (tape and reel) monitoring options: 195 = 1.90v 240 = 2.32v 270 = 2.63v 290 = 2.90v 300 = 2.93v 315 = 3.08v 450 = 4.38v 475 = 4.63v temperature range: i = -40c to +85c (mcp11x-195 only) e = -40c to +125c (except mcp11x-195 only) package: tt = sot-23b, 3-lead lb = sc-70, 3-lead to = to-92, 3-lead part no. xxx x temperature monitoring options device examples: a) mcp111t-195i/tt: tape and reel, 1.95v option, open-drain, -40c to +85c, sot-23b package. b) mcp111t-315e/lb: tape and reel, 3.15v option, open-drain, -40c to +125c, sc-70-3 package. c) mcp111-300e/to: 3.00v option, open-drain, -40c to +125c, to-92-3 package. a) mcp112t-290e/tt: tape and reel, 2.90v option, push-pull, - 40c to +125c, sot-23b-3 package. b) mcp112t-475e/lb: tape and reel, 4.75v option, push-pull, -40c to +125c, sc-70-3 package. c) mcp112-450e/to: 4.5v option, push-pull, -40c to +125c, to-92-3 package. range x x package x tape/reel option
mcp111/112 ds21889c-page 24 ? 2005 microchip technology inc. notes:
? 2005 microchip technology inc. ds21889c-page 25 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meet s with your specifications. microchip makes no repr esentations or war- ranties of any kind whet her express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability ar ising from this information and its use. use of microchip?s prod ucts as critical components in life support systems is not authorized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , micro id , mplab, pic, picmicro, picstart, pro mate, powersmart, rfpic, and smartshunt are registered trademarks of microc hip technology incorporated in the u.s.a. and other countries. amplab, filterlab, migratable memory, mxdev, mxlab, picmaster, seeval, smartsensor and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, a pplication maestro, dspicdem, dspicdem.net, dspicworks, ecan, economonitor, fansense, flexrom, fuzzyl ab, in-circuit serial programming, icsp, icepic, mpasm, mplib, mplink, mpsim, pickit, picdem, picdem.net, piclab, pictail, powercal, powerinfo, powermate, powertool, rflab, rfpicdem, select mode, smart serial, smarttel, total endurance and wiperlock are tr ademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2005, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:200 2 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona and mountain view, california in october 2003. the company?s quality system processes and procedures are for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified.
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