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www.irf.com 1 top view 8 1 2 3 4 5 6 7 d d d g s a d s s so-8 advanced process technology ultra low on-resistance p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free description these hexfet ? power mosfet's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. this surface mount so-8 can dramatically reduce board space and is also available in tape & reel. absolute maximum ratings parameter max. units i d @ t a = 25c continuous drain current, v gs @ -10v -10 i d @ t a = 70c continuous drain current, v gs @ -10v -7.1 i dm pulsed drain current -45 p d @t a = 25c power dissipation 2.5 linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 370 mj dv/dt peak diode recovery dv/dt -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient 50 c/w w a c -55 to + 150

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static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -30 ??? ??? v . 0.0 0.00 0.0 1.0 .0 . 1.0 100 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 61 92 q gs gate-to-source charge ??? 8.0 12 q gd gate-to-drain ("miller") charge ??? 22 32 t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 49 ??? t d(off) turn-off delay time ??? 59 ??? t f fall time ??? 60 ??? c iss input capacitance ??? 1700 ??? c oss output capacitance ??? 890 ??? c rss reverse transfer capacitance ??? 410 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.0 v t rr reverse recovery time ??? 56 85 ns t j = 25c,i f = -5.6a q rr reverse recovery charge ??? 99 150 nc di/dt = 100a/ s v ds = v gs , i d = -250 a conditions v ds = -10v, i d = -2.8a i d = -5.6a v gs = -20v r ds(on) static drain-to-source on-resistance v gs = -4.5v, i d = -2.8a conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -5.6a t j = 25c, i s = -5.6a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the a pf ns nc v ds = -25v ? = 1.0mhz, see fig. 5 na a v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c v gs = -10v, see fig. 6 & 9 v gs = 20v v ds = -24v v dd = -15v i d = -5.6a r g = 6.2 . , . 10 v gs = 0v -45 ??? ??? ??? ??? -3.1

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1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -5.6a d

4 www.irf.com ! ! "# !$ %! %! 0 1000 2000 3000 4000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 20406080100 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v ds ds for test circuit see figure 9 i = -5.6a d 1 10 100 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -v , source-to-drain voltage (v) -i , reverse drain current (a) 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms

www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) "# & ' ()* $+ ! ! ,' - %!,' %! + - + 1 0.1 % +
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6 www.irf.com "# $'&! 0( ',' 0( ' t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom -2.5a -4.5a -5.6a

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -
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8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/2011 data and specifications subject to change without notice. this product has been desi gned and qualifi ed for the industrial market. qualification standards can be found on ir?s web site.

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