regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 v dss ................................................................................ 300v r ds (on) (max) .............................................................. 0.68 w i d .......................................................................................... 10a v iso ................................................................................ 2000v 300 30 10 30 35 C55 ~ +150 C55 ~ +150 2000 2.0 v v a a w c c vrms g FS10KM-6 v dss v gss i d i dm p d t ch t stg v iso v gs = 0v v ds = 0v ac for 1minute, terminal to case typical value application smps, dc-dc converter, battery charger, power supply of printer, copier, hdd, fdd, tv, vcr, per- sonal computer etc. outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FS10KM-6 high-speed switching use symbol drain-source voltage gate-source voltage drain current drain current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight maximum ratings (tc = 25 c) parameter conditions ratings unit w q e 15 ?0.314 ?0.5 10 ?0.3 2.8 ?0.2 f 3.2 ?0.2 1.1 ?0.2 1.1 ?0.2 0.75 ?0.15 2.54 ?0.252.54 ?0.25 2.6 ?0.2 4.5 ?0.2 0.75 ?0.15 3 ?0.33.6 ?0.3 6.5 ?0.3 123 q gate w drain e source
feb.1999 50 40 30 20 10 0 200150100500 20 16 12 8 4 0 0 1020304050 p d = 35w t c = 25? pulse test v gs = 20v 10v 6v 5v 7v 10 8 6 4 2 0 0 4 8 12 16 20 t c = 25? pulse test v gs = 20v 10v 6v 5v 5.5v p d = 35w 10 ? 7 5 3 2 10 1 7 5 3 2 23 5710 1 23 5710 2 23 5710 3 10 0 7 5 3 2 7 5 2 t c = 25? single pulse tw=10? 100? 1ms 10ms dc power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 300v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v m a ma v w v s pf pf pf ns ns ns ns v c/w 300 30 2 4.0 3 0.52 2.6 6.0 570 110 20 17 25 60 30 1.5 10 1 4 0.68 3.4 2.0 3.57 mitsubishi nch power mosfet FS10KM-6 high-speed switching use electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 2 23 5710 1 23 5710 0 23 7 5 ciss tch = 25? f = 1mhz v gs = 0v coss crss 40 32 24 16 8 0 0 4 8 12 16 20 i d = 20a t c = 25? pulse test 15a 10a 5a 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 10 ? 10 1 7 5 3 2 10 0 23 5710 1 10 0 7 5 3 2 23 5710 2 t c = 25? v ds = 10v pulse test 125? 75? 23 5710 1 10 3 7 5 3 2 10 2 7 5 3 2 23 5710 2 10 0 10 1 tch = 25? v dd = 150v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) 0 23 10 ? 5710 0 23 5710 1 23 5710 2 1.0 0.8 0.6 0.4 0.2 t c = 25? pulse test v gs = 10v 20v on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) mitsubishi nch power mosfet FS10KM-6 high-speed switching use
feb.1999 mitsubishi nch power mosfet FS10KM-6 high-speed switching use 5.0 4.0 3.0 2.0 1.0 0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 10 0 7 5 3 2 10 ? ?0 10 1 7 5 3 2 0 5 0 100 150 v gs = 10v i d = 1/2i d pulse test 20 16 12 8 4 0 0 8 16 24 32 40 v ds = 50v 200v tch= 25? i d = 10a 100v 40 32 24 16 8 0 0 0.8 1.6 2.4 3.2 4.0 t c = 125? 25? 75? v gs = 0v pulse test 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?)
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