the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. 1995 mos field effect transistor 2sj461a p-channel mosfet for high speed switching data sheet document no. d17902ej1v0ds00 (1st edition) date published february 2006 ns cp(k) printed in japan description the 2sj461a is a switching device which c an be driven directly by a 2.5 v power source. the 2sj461a has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. features ? can be driven by a 2.5 v power source ? not necessary to consider driving current because of its high input impedance. ? possible to reduce the number of parts by omitting the bias resistor. ordering information part number package 2sj461a-t1b-at 2SJ461A-T2B-AT sc-59 (mini mold) marking: h19 remark ?-at? indicates pb-free (this product does not contain pb in external electrode and other parts.). ?-t1b?, ?-t2b? indicates the unit orientation (8 mm embossed carrier tape, 3,000 pcs/reel). absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ? 50 v gate to source voltage (v ds = 0 v) v gss m 7.0 v drain current (dc) i d(dc) m 0.1 a drain current (pulse) note i d(pulse) m 0.2 a total power dissipation p t 200 mw channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c note pw 10 ms, duty cycle 50% remark the diode connected between the gate and source of t he transistor serves as a protector against esd. when this device actually used, an addi tional protection circuit is exter nally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) equivalent circuit source body diode gate protection diode gate drain 1: source 2: gate 3: drain
data sheet d17902ej1v0ds 2 2sj461a electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 50 v, v gs = 0 v ? 1.0 a gate leakage current i gss v gs = m 7.0 v, v ds = 0 v m 3.0 a gate cut-off voltage v gs(off) v ds = ? 3.0 v, i d = ? 1.0 a ? 0.7 ? 0.9 ? 1.3 v forward transfer admittance note | y fs | v ds = ? 3.0 v, i d = ? 10 ma 12 ms drain to source on-state resistance note r ds(on)1 v gs = ? 2.5 v, i d = ? 3 ma 46 100 ? r ds(on)2 v gs = ? 4.0 v, i d = ? 10 ma 31 50 ? input capacitance c iss v ds = ? 3.0 v 6 pf output capacitance c oss v gs = 0 v 9 pf reverse transfer capacitance c rss f = 1.0 mhz 1.6 pf turn-on delay time t d(on) v dd = ? 3.0 v, i d = ? 20 ma 32 ns rise time t r v gs = ? 3.0 v 270 ns turn-off delay time t d(off) r g = 10 ? 45 ns fall time t f 130 ns note pulsed test circuit switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs ( ? ) 10% 90% v gs 10% 0 i d ( ? ) 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off
data sheet d17902ej1v0ds 3 2sj461a typical characteristics (t a = 25c) 25 175 50 75 40 120 160 80 0 0 240 200 125 150 100 total power dissipation vs. ambient temperature p t - total power dissipation - mw t a - ambient temperature - ?c
data sheet d17902ej1v0ds 4 2sj461a
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