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? products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by micron without notice. products are only warranted by micron to meet micron?s production data sheet specifications. 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram mt55l2my18f_16_b.fm - rev. b, pub. 1/03 1 ?2003, micron technology inc. 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance ? 36mb zbt ? sram mt55l2my18f, mt55v2mv18f, mt55l1my32f, mt55v1mv32f, mt55l1my36f, mt55v1mv36f 3.3v v dd , 3.3v or 2.5v i/o; 2.5v v dd , 2.5v i/o features ? high frequency and 100 percent bus utilization single 3.3v 5 percent or 2.5v 5 percent power supply separate 3.3v 5 percent or 2.5v 5 percent isolated output buffer supply (v dd q) advanced control logic for minimum control signal interface individual byte write controls may be tied low single r/w# (read/write) control pin/ball cke# pin/ball to enable clock and suspend operations three chip enables for simple depth expansion clock-controlled and registered addresses, data i/os, and control signals internally self-timed, fully coherent write internally self-timed, registered outputs to eliminate the need to control oe# snooze mode for reduced-power standby common data inputs and data outputs linear or interleaved burst modes burst feature (optional) pin and ball/function compatibility with 2mb, 4mb, 8mb, and 18mb zbt sra m automatic power down part number example: mt55l1my36ft-11 general description the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed, low-power cmos designs using an advanced cmos process. micron?s 36mb zbt srams integrate a 2 meg x 18, 1 meg x 32, or 1 meg x 36 sram core with advanced syn- chronous peripheral circuitry and a 2-bit burst counter. these srams are optimized for 100 percent bus utilization, eliminating any turnaround cycles for read to write, or write to read, transitions. all synchronous inputs pass through registers controlled options tqfp marking timing (access/cycle/mhz) 6.5ns/8.8ns/113 mhz -8.8 7.5ns/10ns/100 mhz -10 8.5ns/11ns/90 mhz -11 configurations 3.3v v dd , 3.3v or 2.5v i/o 2 meg x 18 mt55l2my18f 1 meg x 32 mt55l1my32f 1 meg x 36 mt55l1my36f 2.5v v dd , 2.5v i/o 2 meg x 18 mt55v2mv18f 1 meg x 32 mt55v1mv32f 1 meg x 36 mt55v1mv36f packages 100-pin, 16mm x 22.1mm tqfp t 165-ball, 13mm x 15mm fbga f 1 note: 1. a part marking guide for the fbga devices can be found on micron?s web site? http://www.micron.com/numberguide. operating temperature range commercial (0oc t a +70oc) none industrial (-40oc t a +85oc) it 2 2. contact factory for availability of industrial temperature devices. figure 1: 100-pin tqfp jedec-standard ms-026 bha (lqfp) figure 2: 165-ball fbga jedec-standard mo-216 (var. cab-1)
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 2 ?2003, micron technology inc. by a positive-edge-triggered single clock input (clk). the synchronous inputs include all addresses, all data inputs, chip enable (ce#), two additional chip enables for easy depth expansion (ce2, ce2#), cycle start input (adv/ld#), synchronous clock enable (cke#), byte write enables (bwa#, bwb#, bwc#, and bwd#), and read/write (r/w#). asynchronous inputs include the output enable (oe#, which may be tied low for control signal mini- mization), clock (clk) and snooze enable (zz, which may be tied low if unused). there is also a burst mode pin/ball (mode) that selects between interleaved and linear burst modes. mode may be tied high, low or left unconnected if burst is unused. the flow-through data-out (q) is enabled by oe#. write cycles can be from one to four bytes wide as controlled by the write control inputs. all read, write, and deselect cycles are initi- ated by the adv/ld# input. subsequent burst addresses can be internally generated as controlled by the burst advance pin (adv/ld#). use of burst mode is optional. it is allowable to give an address for each individual read and write cycle. burst cycles wrap around after the fourth access from a base address. to allow for continuous, 100 percent use of the data bus, the flow-through zbt sram uses a late write cycle. for example, if a write cycle begins in clock cycle one, the address is present on rising edge one. byte writes need to be asserted on the same cycle as the address. the write data associated with the address is required one cycle later, or on the rising edge of clock cycle two. address and write control are registered on-chip to simplify write cycles. this allows self-timed write cycles. individual byte enables allow individual bytes to be written. during a byte write cycle, bwa# con- trols dqa pins/balls; bwb# controls dqb pins/balls; bwc# controls dqc pins/balls; and bwd# controls dqd pins/balls. cycle types can only be defined when an address is loaded, i.e., when adv/ld# is low. par- ity/ecc bits are only available on the x18 and x36 ver- sions. micron?s 36mb zbt srams operate from 3.3v or 2.5v v dd power supply, and all inputs and outputs are lvttl-compatible. users can use either a 3.3v or 2.5v i/o, depending on the v dd voltage. the device is ide- ally suited for systems requiring high bandwidth and zero bus turnaround delays. please refer to micron?s web site ( www.micron.com/ sramds ) for the latest data sheet. dual voltage i/o the 3.3v v dd device is tested for 3.3v and 2.5v i/o function. the 2.5v v dd device is tested for only 2.5v i/o function.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 3 ?2003, micron technology inc. figure 3: functional block diagram 2 meg x 18 figure 4: functional block diagram 1 meg x 32/36 note: functional block diagrams illustrate simplified device operation. see truth tables, pin/ball descriptions, and tim- ing diagrams for detailed information. dqs dqpa dqpb 18 18 18 18 18 18 18 sa0, sa1, sa k mode 21 bwa# bwb# r/w# ce# ce2 ce2# oe# read logic d a t a s t e e r i n g o u t p u t b u f f e r s 2 meg x 9 x 2 memory array e e address register write registry and data coherency control logic 21 21 19 21 burst logic sa0' sa1' d1 d0 q1 q0 sa0 sa1 22 adv/ld# ce adv/ld# k s e n s e a m p s clk cke# write drivers write address register input register 36 36 36 36 36 36 36 k mode 20 bwa# bwb# r/w# ce# ce2 ce2# oe# read logic dqs dqpa dqpb dqpc dqpd 1 meg x 8 x 4 (x32) 1 meg x 9 x 4 (x36) memory array e input register bwc# bwd# address register write registry and data coherency control logic 20 20 18 20 burst logic sa0' sa1' d1 d0 q1 q0 sa0 sa1 20 adv/ld# ce adv/ld# k clk cke# write drivers d a t a s t e e r i n g o u t p u t b u f f e r s e s e n s e a m p s write address register sa0, sa1, sa
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 4 ?2003, micron technology inc. figure 5: pin layout (top view) 100-pin tqfp note: 1. nf for x32 version, dqpx for x36 version. 2. pins 14 and 66 do not have to be connected directly to v ss if another logic level can be applied that is v il . 3. pin 16 does not have to be connected directly to v dd if another logic level can be applied that is v ih . 4. pin 42 isreserved for 72mb address expansion. sa sa sa sa adv/ld# oe# (g#) cke# r/w# clk v ss v dd ce2# bwa# bwb# nc nc ce2 ce# sa sa 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 sa nc nc v dd q v ss nc dqa dqa dqa v ss v dd q dqa dqa v ss v ss 2 v dd zz dqa dqa v dd q v ss dqa dqa nc nc v ss v dd q nc nc nc sa sa sa sa sa sa sa sa dnu 4 v dd v ss dnu dnu sa0 sa1 sa sa sa sa mode (lbo#) nc nc nc v dd q v ss nc nc dqb dqb v ss v dd q dqb dqb v ss 2 v dd v dd 3 v ss dqb dqb v dd q v ss dqb dqb dqb nc v ss v dd q nc nc nc x18 sa sa sa sa adv/ld# oe# (g#) cke# r/w# clk v ss v dd ce2# bwa# bwb# bwc# bwd# ce2 ce# sa sa 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 nf/ dqpb 1 dqb dqb v dd q v ss dqb dqb dqb dqb v ss v dd q dqb dqb v ss v ss 2 v dd zz dqa dqa v dd q v ss dqa dqa dqa dqa v ss v dd q dqa dqa nf/ dqpa 1 sa sa sa sa sa sa sa sa dnu 4 v dd v ss dnu dnu sa0 sa1 sa sa sa sa mode (lbo#) nf/ dqpc 1 dqc dqc v dd q v ss dqc dqc dqc dqc v ss v dd q dqc dqc v ss 2 v dd v dd 3 v ss dqd dqd v dd q v ss dqd dqd dqd dqd v ss v dd q dqd dqd nf/ dqpd 1 x32/x36
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 5 ?2003, micron technology inc. table 1: tqfp pin descriptions symbol type description adv/ld# input synchronous address advance/load: when high, th is input is used to advance the internal burst counter, controlling burst access after the ex ternal address is loaded. when adv/ld# is high, r/w# is ignored. a low on adv/ld# clocks a new address at the clk rising edge. bwa# bwb# bwc# bwd# input synchronous byte write enables: these active low inputs allow individual bytes to be written when a write cycle is active and must meet the setup and hold times around the rising edge of clk. byte writes need to be asserted on the same cycle as the address. bwa# controls dqa pins; bwb# controls dqb pins; bwc# controls dqc pins; bwd# controls dqd pins. parity is only available on the x18 and x36 versions. ce# input synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded (adv/ld# low). ce2# input synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded (adv/ld# low). this input can be used for memory depth expansion. ce2 input synchronous chip enable: this active high input is used to enable the device and is sampled only when a new external address is loaded (adv/ld# low). this input can be used for memory depth expansion. cke# input synchronous clock enable: this active low i nput permits clk to propagate throughout the device. when cke is high, the device ignores the clk input and effectively internally extends the previous clk cycle. this input mu st meet setup and hold times around the rising edge of clk. clk input clock: this signal registers the address, data, chip enables, byte write enables, and burst control inputs on its rising edge. all synchronous inputs must meet setup and hold times around the clock?s rising edge. dqa dqb dqc dqd input/ output sram data i/os: byte ?a? is associated with dqa pins; byte ?b? is associated with dqb pins; byte ?c? is associated with dqc pins; byte ?d ? is associated with dqd pins. input data must meet setup and hold times around the rising edge clk. mode (lbo#) input mode: this input selects the burst sequence. a low on this pin selects linear burst. nc or high on this pin selects interleaved burst. do not alter input state while device is operating. lbo# is the jedec-standard term for mode. oe# (g#) input output enable: this active low, asynchronous input enables the data i/o output drivers. g# is the jedec-standard term for oe#. r/w# input read/write: this input determines the cycle type when adv/ld# is low and is the only means for determining reads and writes. read cycles may not be converted into writes (and vice versa) other than by loading a new address. a low on this pin permits byte write operations and must meet the setup and hold times around the rising edge of clk. full bus- width writes occur if all byte write enables are low. sa0 sa1 sa input synchronous address inputs: these inputs ar e registered and must meet the setup and hold times around the rising edge of clk. sa0 and sa1 are the two least significant bits (lsb) of the address field and set the internal burst counter if burst is desired. zz input snooze enable: this active high, asynchronous in put causes the device to enter a low-power standby mode in which all data in the memory a rray is retained. when zz is active, all other inputs are ignored. this pin has an internal pull-down and can be left unconnected. nf/ dqpa nf/ dqp nf/ dqpc nf/ dqpd nf i/o no function/parity data i/os: on the x32 versi on, these are no function (nf). on the x18 version, byte ?a? parity is dqpa; byte ?b? pari ty is dqpb. on the x36 version, byte ?a? parity is dqpa; byte ?b? parity is dqpb; byte ?c? pa rity is dqpc; byte ?d? parity is dqpd. no function pins are internally connected to the die and have the capacitance of an input pin. it is allowable to leave these pins unconnected or driven by signals. v dd supply power supply: see dc electrical characteristics and operating conditions for range. v dd q supply isolated output buffer supply: see dc electrical characteristics and operating conditions for range.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 6 ?2003, micron technology inc. v ss supply ground: gnd. nc ? no connect: these signals are not internally connected and may be connected to ground to improve package heat dissipation. dnu ? do not use: these signals may either be unc onnected or wired to gnd to minimize thermal impedance. table 1: tqfp pin descriptions (continued) symbol type description
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 7 ?2003, micron technology inc. figure 6: ball layout (top view) 165-ball fbga x18 x32/x36 note: 1. no function (nf) is used on the x32 versio n. parity (dqpx) is used on the x36 version. 2. ball 2p is reserved for 72mb address expansion. a b c d e f g h j k l m n p r a b c d e f g h j k l m n p r 2 ce# ce2 v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqb dqb dqb dqb v dd nc nc nc nc nc nc 2 sa nc nc nc nc nc nc nc v ss dqb dqb dqb dqb dqpb nc mode (lbo#) bwb# nc v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa nc bwa# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc tdi tms ce2# clk v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nf sa1 sa0 cke# r/w# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss tdo tck adv/ld# oe# (g#) v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa sa sa v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc nc nc nc nc nc dqa dqa dqa dqa nc sa sa sa nc dqpa dqa dqa dqa dqa zz nc nc nc nc nc nf sa top view 3456789 10 11 1 a b c d e f g h j k l m n p r a b c d e f g h j k l m n p r 2 ce# ce2 v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqc dqc dqc dqc v dd dqd dqd dqd dqd nc nc 2 sa nc nc nf/ dqpc 1 dqc dqc dqc dqc v ss dqd dqd dqd dqd nf/ dqpd 1 nc mode (lbo#) bwc# bwd# v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa bwb# bwa# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc tdi tms ce2# clk v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nf sa1 sa0 cke# r/w# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss tdo tck adv/ld# oe# (g#) v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa sa sa v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqb dqb dqb dqb nc dqa dqa dqa dqa nc sa sa nc nc nf/ dqpb 1 dqb dqb dqb dqb zz dqa dqa dqa dqa nf /dqpa 1 nf sa top view 3456789 10 11 1
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 8 ?2003, micron technology inc. . table 2: fbga ball descriptions symbol type description adv/ld# input synchronous address advance/load: when high, th is input is used to advance the internal burst counter, controlling burst access after the ex ternal address is loaded. when adv/ld# is high, r/w# is ingored. a low on adv/ld# clocks a new address at the clk rising edge. bwa# bwb# bwc# bwd# input synchronous byte write enables: these active low inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of clk. a byte write enable is low for a write cycle and high for a read cycle. for the x18 version, bwa# controls dqa balls and dqpa; bwb# controls dqb balls and dqpb. for the x32 and x36 versions, bwa# controls dqa balls and dqpa; bwb# controls dqb balls and dqpb; bwc# controls dqc balls and dqpc; bwd# controls dqd balls and dqpd. parity is only available on the x18 and x36 versions. ce# input synchronous chip enable: this active low input is used to enable the device. ce# is sampled only when a new external address is loaded (adv/ld# low). ce2# input synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded (adv/ld# low). this input can be used for memory depth expansion. ce2 input synchronous chip enable: this active high input is used to enable the device and is sampled only when a new external address is loaded (adv/ld# low). this input can be used for memory depth expansion. cke# input synchronous clock enable: this active low i nput permits clk to propogate throughout the device. when cke# is high, the device ignores the clk input and effectively internally extends the previous clk cycle. this input must meet the setup and hold times around the rising edge of clk. clk input clock: this signal registers the address, data, chip enable, byte write enables, and burst control inputs on its rising edge. all synchronous inputs must meet setup and hold times around the clock?s rising edge. mode (lb0#) input mode: this input selects the burst sequence. a lo w on this input selects ?linear burst.? nc or high on this input selects ?interleaved burst.? do not alter input state while device is operating. lbo# is the jedec-standard term for mode. oe#(g#) input output enable: this active low, asynchronous input enables the data i/o output drivers. g# is the jedec-standard term for oe#. r/w# input read/write: this input determines the cycle type when adv/ld# is low and is the only means for determining reads and writes. read cycles may not be converted into writes (and vice versa) other than by loading a new address. a low on this ball permits byte write operations to meet the setup and hold times around the rising edge of clk. full bus-width writes occur if all byte write enables are low. sa0 sa1 sa input synchronous address inputs: these inputs ar e registered and must meet the setup and hold times around the rising edge of clk. sa0 and sa1 are the two least significant bits (lsb) of the address field and set the internal burst counter if burst is desired. tms tdi tck input ieee 1149.1 test inputs: jedec-standard 2.5v i/o levels. these balls may be left not connected if the jtag function is not used in the circuit. zz input snooze enable: this active high, asynchronous in put causes the device to enter a low-power standby mode in which all data in the memory a rray is retained. when zz is active, all other inputs are ignored. this ball has an internal pull-down and can be left unconnected. dqa dqb dqc dqd input/ output sram data i/os: for the x18 version, byte ?a? is associated with dqa balls; byte ?b? is associated with dqb balls. for the x32 and x36 versions, byte ?a? is associated with dqa balls; byte ?b? is associated wi th dqb balls; byte ?c? is associated with dqc balls; byte ?d? is associated with dqd balls. input data must meet setup and hold times around the rising edge of clk.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 9 ?2003, micron technology inc. nf/ dqpa nf/ dqpb nf/ dqpc nf/ dqpd nf i/o no function/parity data i/os: on the x32 versi on, these are no function (nf). on the x18 version, byte ?a? parity is dqpa; byte ?b? pari ty is dqpb. on the x36 version, byte ?a? parity is dqpa; byte ?b? parity is dqpb; byte ?c? pa rity is dqpc; byte ?d? parity is dqpd. no function balls are internally connected to the die and have the capacitance of an input pin. it is allowable to leave these balls unconnected or driven by signals. tdo output ieee 1149.1 test output: jedec-standard 2.5v i/o level. v dd supply power supply: see dc electrical characteristics and operating conditions for range. v dd q supply isolated output buffer supply: see dc electri cal characteristics and operating conditions for range. v ss supply ground: gnd. nc ? no connect: these signals are not internally connected and may be connected to ground to improve package heat dissipation. table 2: fbga ball descriptions (continued) symbol type description
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 10 ?2003, micron technology inc. note: using r/w# and byte write(s), any one or more bytes may be written. note: using r/w# and byte write(s), any one or more bytes may be written. table 3: interleaved burst address table (mode = nc or high) first address (external) second address (internal) third address (internal) fourth address (internal) x?x00 x?x01 x?x10 x?x11 x?x01 x?x00 x?x11 x?x10 x?x10 x?x11 x?x00 x?x01 x?x11 x?x10 x?x01 x?x00 table 4: linear burst address table (mode = low) first address (external) second address (internal) third address (internal) fourth address (internal) x?x00 x?x01 x?x10 x?x11 x?x01 x?x10 x?x11 x?x00 x?x10 x?x11 x?x00 x?x01 x?x11 x?x00 x?x01 x?x10 table 5: partial truth table for read/write commands (x18) function r/w# bwa# bwb# read hxx write byte ?a? llh write byte ?b? lhl write all byte lll write abort/nop lhh table 6: partial truth table for read/write commands (x32/x36) function r/w# bwa# bwb# bwc# bwd# read hxxxx write byte ?a? l l hhh write byte ?b? lhlhh write byte ?c? lhhlh write byte ?d? l hhh l write all byte lllll write abort/nop l hhhh
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 11 ?2003, micron technology inc. figure 7: state diagram for zbt sram note: 1. a stall or ignore clock edge cycle is not shown in the above diagram. this is because cke# high only blocks the clock (clk) input and does not change the state of the device. 2. states change on the rising edge of the clock (clk). deselect begin read burst read begin write ds ds ds burst write read ds write write burst read write read burst burst read burst ds write key: command ds read write burst operation deselect new read new write burst read, burst write, or continue deselect burst read write
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 12 ?2003, micron technology inc. note: 1. continue burst cycles, whether read or write, use the same control inputs. the type of cycle performed (read or write) is chosen in the initial begin burst cycle. a continue deselect cycle can only be entered if a deselect cycle is executed first. 2. dummy read and write abort cycles can be considered nops because the device performs no external opera- tion. a write abort means a write command is given, but no operation is performed. 3. oe# may be wired low to minimize the number of control signals to the sram. the device will automatically turn off the output drivers during a write cycle. oe# may be us ed when the bus turn-on and turn-off times do not meet an application?s requirements. 4. if an ignore clock edge command occurs during a read oper ation, the dq bus will remain active (low-z). if it occurs during a write cycle, the bus will remain in high- z. no write operations will be performed during the ignore clock edge cycle. 5. x means ?don?t care.? h means logic high. l means logic low. bwx = h means all byte write signals (bwa#, bwb#, bwc#, and bwd#) are high. bwx = l means one or more byte write signals are low. 6. bwa# enables writes to byte ?a? (dqa pins/balls); bw b# enables writes to byte ?b? (dqb pins/balls); bwc# enables writes to byte ?c? (dqc pins/balls); bwd# enables writes to byte ?d? (dqd pins/balls). 7. all inputs except oe# and zz must meet setup and hold times around the rising edge (low to high) of clk. 8. wait states are inserted by setting cke# high. 9. this device contains circuitry that will ensu re that the outputs will be in high-z during power-up. 10. the device incorporates a 2-bit burst counter. address wraps to the initial address every fourth burst cycle. 11. the address counter is incremented for all continue burst cycles. table 7: truth table notes: 5?10 operation address used ce# ce2# ce2 zz adv/ ld# r/w# bwx oe# cke# clk dq notes deselect cycle none h x x l l x x x l l h high-z deselect cycle none x h x l l x x x l l h high-z deselect cycle none x x l l l x x x l l h high-z continue deselect cycle none x x x l h x x x l l h high-z 1 read cycle (begin burst) external l l h l l h x l l l hq read cycle (continue burst) next x x x l h x x l l l hq 1, 11 nop/dummy read (begin burst) external l l h l l h x h l l h high-z 2 dummy read (continue burst) next x x x l h x x h l l h high-z 1, 2, 11 write cycle (begin burst) external l l h l l l l x l l hd 3 write cycle (continue burst) next x x x l h x l x l l h d 1, 3, 11 nop/write abort (begin burst) none l l h l l l h x l l h high-z 2, 3 write abort (continue burst) next x x x l h x h x l l h high-z 1, 2, 3, 11 ignore clock edge (stall) current x x x l x x x x h l h? 4 snooze mode none x x x h x x x x x x high-z
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 13 ?2003, micron technology inc. absolute maximum ratings 3.3v v dd voltage on v dd supply relative to v ss . . . . . . . . . . . . . . . . . -0.5v to +4.6v voltage on v dd q supply relative to v ss . . . . . . . . . . . . . . . . . . -0.5v to v dd v in (dqs) . . . . . . . . . . . . . . . -0.5v to v dd q + 0.5v v in (inputs) . . . . . . . . . . . . . . -0.5v to v dd + 0.5v storage temperature (tqfp) . . . . . -55c to +150c storage temperature (fbga) . . . . . -55c to +125c junction temperature . . . . . . . . . . . . . . . . . . . +150c short circuit output current . . . . . . . . . . . . . 100ma 2.5v v dd voltage on v dd supply relative to v ss . . . . . . . . . . . . . . . . . -0.3v to +3.6v voltage on v dd q supply relative to v ss . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.6v v in (dqs) . . . . . . . . . . . . . . . -0.3v to v dd q + 0.3v v in (inputs) . . . . . . . . . . . . . . -0.3v to v dd + 0.3v storage temperature (tqfp) . . . . . -55c to +150c storage temperature (fbga) . . . . . -55c to +125c junction temperature . . . . . . . . . . . . . . . . . . . +150c short circuit output current . . . . . . . . . . . . . 100ma stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these or any other condi- tions above those indicated in the operational sections of this specification is not implied. exposure to abso- lute maximum rating conditions for extended periods may affect reliability. junction temperature depends upon package type, cycle time, loading, ambient temperature, and airflow. see micron technical note tn-05-14 for more infor- mation. table 8: 3.3v v dd , 3.3v i/o dc electrical characteristics and operating conditions notes appear following parameter tables on page 18; 0oc t a +70oc; v dd and v dd q = 3.3v 0.165v unless otherwise noted description conditions symbol min max units notes input high (logic 1) voltage v ih 2.0 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.8 v 1, 2 input leakage current 0v v in v dd il i -1.0 1.0 a 4 output leakage current output(s) disabled, 0v v in v dd il o -1.0 1.0 a output high voltage i oh = -4.0ma v oh 2.4 v 1, 5 output low voltage i ol = 8.0ma v ol 0.4 v 1, 5 supply voltage v dd 3.135 3.465 v 1 isolated output buffer supply v dd q 3.135 v dd v1, 6
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 14 ?2003, micron technology inc. table 9: 3.3v v dd , 2.5v i/o dc electrical characteristics and operating conditions notes appear following parameter tables on page 18; 0oc t a +70oc; v dd = 3.3v 0.165v and v dd q = 2.5v 0.125v unless otherwise noted description conditions symbol min max units notes input high (logic 1) voltage data bus (dqx) v ih q1.7v dd q + 0.3 v 1, 2 inputs v ih 1.7 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.7 v 1, 2 input leakage current 0v v in v dd il i -1.0 1.0 a 4 output leakage current output(s) disabled, 0v v in v dd q (dq x ) il o -1.0 1.0 a output high voltage i oh = -2.0ma v oh 1.7 ? v 1, 5 i oh = -1.0ma v oh 2.0 ? v 1, 5 output low voltage i ol = 2.0ma v ol ?0.7v1, 5 i ol = 1.0ma v ol ?0.4v1, 5 supply voltage v dd 3.135 3.465 v 1 isolated output buffer supply v dd q 2.375 2.625 v 1, 6 table 10: 2.5v v dd , 2.5v i/o dc electrical characteristics and operating conditions notes appear following parameter tables on page 18; 0oc t a +70oc; v dd and v dd q = 2.5v 0.125v unless otherwise noted description conditions symbol min max units notes input high (logic 1) voltage data bus (dqx) v ih q1.7v dd q + 0.3 v 1, 3 inputs v ih 1.7 v dd + 0.3 v 1, 3 input low (logic 0) voltage v il -0.3 0.7 v 1, 3 input leakage current 0v v in v dd il i -1.0 1.0 a 4 output leakage current output(s) disabled, 0v v in v dd q (dq x ) il o -1.0 1.0 a output high voltage i oh = -2.0ma v oh 1.7 ? v 1, 5 i oh = -1.0ma v oh 2.0 ? v 1, 5 output low voltage i ol = 2.0ma v ol ?0.7v1, 5 i ol = 1.0ma v ol ?0.4v1, 5 supply voltage v dd 2.375 2.625 v 1 isolated output buffer supply v dd q 2.375 2.625 v 1, 6
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 15 ?2003, micron technology inc. table 11: tqfp capacitance note 11; notes appear following parameter tables on page 18 description conditions symbol typ max units control input capacitance t a = 25c; f = 1 mhz v dd = 3.3v c i 4.2 5 pf input/output capacitance (dq) c o 3.5 4 pf address capacitance c a 45pf clock capacitance c ck 4.2 5 pf table 12: fbga capacitance note 11; notes appear following parameter tables on page 18 description conditions symbol typ max units address/control input capacitance t a = 25c; f = 1 mhz c i 45pf output capacitance (q) c o 44.5pf clock capacitance c ck 55.5pf table 13: tqfp thermal resistance note 11; notes appear following parameter tables on page 18 description conditions symbol typ units thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, per eia/jesd51. ja tbd c/w thermal resistance (junction to top of case) jc tbd c/w table 14: fbga thermal resistance note 11; notes appear following parameter tables on page 18 description conditions symbol typ units junction to ambient (airflow of 1m/s) test conditions follow standard test methods and procedures for measuring thermal impedance, per eia/jesd51. ja tbd c/w junction to case (top) jc tbd c/w junction to balls (bottom) jb tbd c/w
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 16 ?2003, micron technology inc. table 15: 3.3v v dd , i dd operating conditions and maximum limits (2 meg x 18 and 1 meg x 32/36) notes appear following parameter tables on page 18; 0oc t a +70oc; v dd = 3.3v 0.165v and v dd q = 3.3v 0.165v or 2.5v 0.125v unless otherwise noted max description conditions sym typ -8.8 -10 -11 units notes power supply current: operating device selected; all inputs v il or v ih ; cycle time t kc (min); v dd = max; outputs open i dd tbd 300 280 260 ma 7, 8, 9 power supply current: idle device selected; v dd = max; cke# v ih ; all inputs v ss + 0.2 or v dd - 0.2; cycle time t kc (min) i dd1 tbd 115 110 100 ma 7, 8, 9 cmos standby device deselected; v dd = max; all inputs v ss + 0.2 or v dd - 0.2; all inputs static; clk frequency = 0 i sb2 tbd 30 30 30 ma 8, 9 clock running device deselected; v dd = max; adv/ld# v ih ; all inputs v ss + 0.2 or v dd - 0.2; cycle time t kc (min) i sb4 tbd 115 110 100 ma 8, 9 snooze mode zz v ih i sb2z tbd 30 30 30 ma 9 table 16: 2.5v v dd , i dd operating conditions and maximum limits (2 meg x 18 and 1 meg x 32/36) notes appear following parameter tables on page 18; 0oc t a +70oc; v dd = 3.3v 0.165v and v dd q = 3.3v 0.165v or 2.5v 0.125v unless otherwise noted max description conditions sym typ -8.8 -10 -11 units notes power supply current: operating device selected; all inputs v il or v ih ; cycle time t kc (min); v dd = max; outputs open i dd tbd 265 255 230 ma 7, 8, 10 power supply current: idle device selected; v dd = max; cke# v ih ; all inputs v ss + 0.2 or v dd - 0.2; cycle time t kc (min) i dd1 tbd 75 70 55 ma 7, 8, 10 cmos standby device deselected; v dd = max; all inputs v ss + 0.2 or v dd - 0.2; all inputs static; clk frequency = 0 i sb2 tbd 30 30 30 ma 7, 8, 10 clock running device deselected; v dd = max; adv/ld# v ih ; all inputs v ss + 0.2 or v dd - 0.2; cycle time t kc (min) i sb4 tbd 75 70 55 ma 7, 8, 10 snooze mode zz v ih i sb2z tbd 30 30 30 ma 10
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 17 ?2003, micron technology inc. table 17: ac electrical characteristics and recommended operating conditions notes 12-14 ; notes appear following parameter tables on page 18; 0oc t a +70oc; v dd = 3.3v 0.165v unless otherwise noted description symbol -8.8 -10 -11 units notes min max min max min max clock clock cycle time t khkh 8.8 10.0 11.0 ns clock frequency f kf 113 100 90 mhz clock high time t khkl 2.5 2.5 3.0 ns 15 clock low time t klkh 2.5 2.5 3.0 ns 15 output times clock to output valid t khqv 6.5 7.5 8.5 ns clock to output invalid t khqx 2.5 3.0 3.0 ns 16 clock to output in low-z t khqx 2.5 3.0 3.0 ns 11, 16, 17 clock to output in high-z t khqz 4.0 5.0 5.0 ns 11, 16, 17 oe# to output valid t glqv 3.5 4.0 5.0 ns 12 oe# to output in low-z t glqx 0 0 0 ns 11, 16, 17 oe# to output in high-z t ghqz 3.5 4.0 5.0 ns 11, 16, 17 setup times address t avkh 2.0 2.0 2.0 ns 18 clock enable (cke#) t evkh 2.0 2.0 2.0 ns 18 control signals t cvkh 2.0 2.0 2.0 ns 18 data-in t dvkh 2.0 2.0 2.0 ns 18 hold times address t khax 0.5 0.5 0.5 ns 18 clock enable (cke#) t khex 0.5 0.5 0.5 ns 18 control signals t khcx 0.5 0.5 0.5 ns 18 data-in t khdx 0.5 0.5 0.5 ns 18
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 18 ?2003, micron technology inc. notes 1. all voltages referenced to v ss (gnd). 2. for 3.3v v dd : overshoot: v ih +4.6v for t t khkh/2 for i 20ma undershoot:v il -0.7v for t t khkh/2 for i 20ma power-up: v ih +3.6v and v dd 3.135v for t 200ms 3. for 2.5v v dd : overshoot: v ih +3.6v for t t khkh/2 for i 20ma undershoot:v il -0.5v for t t khkh/2 for i 20ma power-up: v ih +2.65v and v dd 2.375v for t 200ms 4. the mode pin/ball has an internal pull-up, and input leakage = 10a. 5. the load used for v oh , v ol testing is shown in fig- ures 11 and 12 for 3.3v i/o and figures 13 and 14 for 2.5v i/o. ac load current is higher than the shown dc values. ac i/o curves are available upon request. 6. v dd q should never exceed v dd . v dd and v dd q can be externally wired together to the same power supply. 7. i dd is specified with no output current and increases with faster cycle times. i dd q increases with faster cycle times and greater output loading. 8. ?device deselected? means device is in power- down mode as defined in the truth table. ?device selected? means device is active (not in power- down mode). 9. typical values are measured at 3.3v, 25 o c, and 12ns cycle time. 10. typical values are measured at 2.5v, 25 o c, and 12ns cycle time. 11. this parameter is sampled. 12. oe# can be considered a ?don?t care? during writes; however, controlling oe# can help fine- tune a system for turnaround timing. 13. test conditions as specified with the output load- ing shown in figures 11 and 12 for 3.3v i/o and figures 13 and 14 for 2.5v i/o unless otherwise noted. 14. a write cycle is defined by r/w# low, having been registered into the device at adv/ld# low. a read cycle is defined by r/w# high with adv/ ld# low. both cases must meet setup and hold times. 15. measured as high above v ih and low below v il . 16. refer to technical note tn-55-01, ?designing with zbt srams,? for a more thorough discussion of these parameters. 17. this parameter is measured with the output load- ing shown in figure 12 for 3.3v i/o and figure 14 for 2.5v i/o. 18. this is a synchronous device. all addresses must meet the specified setup and hold times with sta- ble logic levels for all rising edges of clk when the chip is enabled. to remain enabled, chip enable must be valid at each rising edge of clk when adv/ld# is low.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 19 ?2003, micron technology inc. figure 8: read/write timing note: 1. for these waveforms, zz is tied low. 2. burst sequence order is determined by mode (0 = lin ear, 1 = interleaved). burs t operations are optional. 3. ce# represents three signals. when ce# = 0, it represents ce# = 0, ce2# = 0, ce2 = 1. 4. data coherency is provided for all possible operations. if a read is initiated, the most current data is used. the most recent data may be from the input data register. write d(a1) 123 456789 clk t khkh t klkh t khkl 10 ce# t khcx t cvkh r/w# cke# t khex t evkh bwx# adv/ld# t khax t avkh address a1 a2 a3 a4 a5 a6 a7 t khdx t dvkh dq command d(a1) d(a2) q(a4) q(a3) d(a2+1) t khqx t khqz t khqv write d(a2) burst write d(a2+1) read q(a3) read q(a4) burst read q(a4+1) write d(a5) read q(a6) write d(a7) deselect oe# t glqv t glqx t ghqz don?t care undefined d(a5) t khqx q(a4+1) d(a7) q(a6)
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 20 ?2003, micron technology inc. figure 9: nop, stall, and deselect cycles note: 1. the ignore clock edge or stall cycle (clock 3) illustrate s cke# being used to create a ?pause.? a write is not performed during this cycle. 2. for these waveforms, zz and oe# are tied low. 3. ce# represents three signals. when ce# = 0, it represents ce# = 0, ce2# = 0, ce2 = 1. 4. data coherency is provided for all possible operations. if a read is initiated, the most current data is used. the most recent data may be from the input data register. read q(a3) 456 78910 a3 a4 a5 d(a4) 123 clk ce# r/w# cke# bwx# adv/ld# address dq command write d(a4) stall write d(a1) read q(a2) stall nop read q(a5) deselect continue deselect don?t care undefined t khqz a1 a2 q(a2) d(a1) q(a3) t khqx q(a5)
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 21 ?2003, micron technology inc. snooze mode snooze mode is a low-current, power-down mode in which the device is deselected and current is reduced to i sb 2 z . the duration of snooze mode is dictated by the length of time the zz is in a high state. after the device enters snooze mode, all inputs except zz become disabled and all outputs go to high-z. the zz is an asynchronous, active high input that causes the device to enter snooze mode. when the zz becomes a logic high, i sb 2 z is guaranteed after the time t zzi is met. any read or write operation pend- ing when the device enters snooze mode is not guaranteed to complete successfully. therefore, snooze mode must not be initiated until valid pend- ing operations are completed. similarly, when exiting snooze mode during t rzz, only a deselect or read cycle should be given. note: 1. this parameter is sampled. figure 10: snooze mode waveform table 18: snooze mode electrical characteristics description conditions symbol min max units notes current during snooze mode zz v ih i sb2z 30 ma zz active to input ignored t zz t khkh ns 1 zz inactive to input sampled t rzz t khkh ns 1 zz active to snooze current t zzi t khkh ns 1 zz inactive to exit snooze current t rzzi 0ns1 t zz i supply clk zz t rzz all inputs (except zz) don?t care i isb2z t zzi t rzzi outputs (q) high-z deselect or read only
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 22 ?2003, micron technology inc. 3.3v v dd , 3.3v i/o ac test conditions input pulse levels ....................... v ih = (v dd /2.2) + 1.5v ..........................v il = (v dd /2.2) - 1.5v input rise and fall times ..............................................1ns input timing reference levels..............................v dd /2.2 output reference levels ....................................v dd q/2.2 output load................................... see figures 11 and 12 3.3v v dd , 2.5v i/o ac test conditions input pulse levels ....................v ih = (v dd /2.64) + 1.25v ...................... v il = (v dd /2.64) - 1.25v input rise and fall times ..............................................1ns input timing reference levels............................v dd /2.64 output reference levels .......................................v dd q/2 output load................................... see figures 13 and 14 2.5v v dd , 2.5v i/o ac test conditions input pulse levels .........................v ih = (v dd /2) + 1.25v ........................... v il = (v dd /2) - 1.25v input rise and fall times ..............................................1ns input timing reference levels.................................v dd /2 output reference levels .......................................v dd q/2 output load................................... see figures 13 and 14 load derating curves micron 2 meg x 18, 1 meg x 32, and 1 meg x 36 zbt sram timing is dependent upon the capacitive load- ing on the outputs. consult the factory for copies of i/o current versus voltage curves. 3.3v i/o output load equivalents figure 11: figure 12: 2.5v i/o output load equivalents figure 13: figure 14: q 50 v = v dd q/2.2 z = 50 o t q 351 317 5pf +3.3v q 50 ? v = v dd q/2 z = 50 ? o t q 225 ? 225 ? 5pf +2.5v
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 23 ?2003, micron technology inc. ieee 1149.1 serial boundary scan (jtag) the sram incorporates a serial boundary scan test access port (tap). this port operates in accordance with ieee standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. these functions from the ieee specification are excluded because their inclusion places an added delay in the critical speed path of the sram. note that the tap controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant taps. the tap operates using jedec-standard 2.5v i/o logic levels. the sram contains a tap controller, instruction register, boundary scan register, bypass register, and id register. disabling the jtag feature these balls can be left floating (unconnected), if the jtag function is not to be implemented. upon pow- erup, the device will come up in a reset state which will not interfere with the operation of the device. figure 15: tap controller state diagram note: the 0/1 next to each state represents the value of tms at the rising edge of tck. test access port (tap) test clock (tck) the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this ball unconnected if the tap is not used. the ball is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi ball is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information on loading the instruction register, see figure 15. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most signifi- cant bit (msb) of any register. (see figure 16.) figure 16: tap controller block diagram note: x = 75 for all configurations. test-logic reset run-test/ idle select dr-scan select ir-scan capture-dr shift-dr capture-ir shift-ir exit1-dr pause-dr exit1-ir pause-ir exit2-dr update-dr exit2-ir update-ir 1 1 1 0 1 1 0 0 1 1 1 0 0 0 0 0 0 0 0 0 1 0 1 1 0 1 0 1 1 1 1 0 bypass register 0 instruction register 0 1 2 identification register 0 1 2 29 30 31 . . . boundary scan register* 0 1 2 . . x . . . selection circuitry selection circuitry tck tms tap controller tdi tdo
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 24 ?2003, micron technology inc. test data-out (tdo) the tdo outputball is used to serially clock data- out from the registers. the output is active depending upon the current state of the tap state machine. (see figure 15.) the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. (see figure 16.) performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected between the tdi and tdo balls and allow data to be scanned into and out of the sram test circuitry. only one register can be selected at a time through the instruction register. data is seri- ally loaded into the tdi ball on the rising edge of tck. data is output on the tdo ball on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo balls as shown in figure 16. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as described in the previous section. when the tap controller is in the capture-ir state, the two lsbs are loaded with a binary ?01? pattern to allow for fault isolation of the board-level serial test data path. bypass register to save time when serially shifting data through reg- isters, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between the tdi and tdo balls. this allows data to be shifted through the sram with mini- mal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and bidirectional balls on the sram. the sram has a 76-bit-long register. the boundary scan register is loaded with the con- tents of the ram i/o ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo balls when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instructions can be used to capture the contents of the i/o ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the pins on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32- bit code during the capture-dr state when the idcode command is loaded in the instruction regis- ter. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift- dr state. the id register has a vendor code and other information described in the identification register definitions table. tap instruction set overview eight different instructions are possible with the three-bit instruction register. all combinations are listed in the instruction codes table. three of these instructions are listed as reserved and should not be used. the other five instructions are described in detail below. the tap controller used in this sram is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully imple- mented. the tap controller cannot be used to load address, data or control signals into the sram and cannot preload the i/o buffers. the sram does not implement the 1149.1 commands extest or intest or the preload portion of sample/preload; rather, it performs a capture of the i/o ring when these instructions are executed.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 25 ?2003, micron technology inc. instructions are loaded into the tap controller dur- ing the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction regis- ter through the tdi and tdo balls. to execute the instruction once it is shifted in, the tap controller needs to be moved into the update-ir state. extest extest is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. extest is not implemented in this sram tap controller, and therefore this device is not compliant to 1149.1. the tap controller does recognize an all-0 instruc- tion. when an extest instruction is loaded into the instruction register, the sram responds as if a sam- ple/preload instruction has been loaded. there is one difference between the two instructions. unlike the sample/preload instruction, extest places the sram outputs in a high-z state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo balls and allows the idcode to be shifted out of the device when the tap controller enters the shift-dr state. the idcode instruction is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction causes the boundary scan register to be connected between the tdi and tdo balls when the tap controller is in a shift-dr state. it also places all sram outputs into a high-z state. sample/preload sample/preload is a 1149.1 mandatory instruc- tion. the preload portion of this instruction is not implemented, so the device tap controller is not fully 1149.1-compliant. when the sample/preload instruction is loaded into the instruction register and the tap controller is in the capture-dr state, a snapshot of data on the inputs and bidirectional pins/balls is captured in the bound- ary scan register. the user must be aware that the tap controller clock can only operate at a frequency up to 10 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output will undergo a transition. the tap may then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. t o guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap con- troller?s capture setup plus hold time ( t cs plus t ch). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample/preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the clk captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo balls. note that since the preload part of the command is not implemented, putting the tap to the update-dr state while performing a sample/preload instruc- tion will have the same effect as the pause-dr com- mand. bypass when the bypass instruction is loaded in the instruction register and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo balls. the advantage of the bypass instruc- tion is that it shortens the boundary scan path when multiple devices are connected together on a board. reserved these instructions are not implemented but are reserved for future use. do not use these instructions.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 26 ?2003, micron technology inc. figure 17: tap timing note: 1. t cs and t ch refer to the setup and hold time requirements of latching data from the boundary scan register. 2. test conditions are specified using the load in figure 18. t tlth test clock (tck) 123456 test mode select (tms) t thtl test data-out (tdo) t thth test data-in (tdi) t thmx t mvth t thdx t dvth t tlox t tlov don?t care undefined table 19: tap ac electrical characteristics notes 1, 2; 0oc t a +70oc; v dd = 3.3v 0.165v or 2.5v 0.125v description symbol min max units clock clock cycle time t thth 100 ns clock frequency f tf 10 mhz clock high time t thtl 40 ns clock low time t tlth 40 ns output times tck low to tdo unknown t tlox 0ns tck low to tdo valid t tlov 20 ns tdi valid to tck high t dvth 10 ns tck high to tdi invalid t thdx 10 ns setup times tms setup t mvth 10 ns capture setup t cs 10 ns hold times tms hold t thmx 10 ns capture hold t ch 10 ns
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 27 ?2003, micron technology inc. tap ac test conditions input pulse levels ......................................vss to 2.5v input rise and fall times ......................................... 1ns input timing reference levels..............................1.25v output reference levels .......................................1.25v test load termination supply voltage ................1.25v figure 18: tap ac output load equivalent note: 1. all voltages referenced to v ss (gnd). 2. overshoot: v ih (ac) v dd + 1.5v for t t khkh/2 undershoot:v il (ac) -0.5v for t t khkh/2 power-up: v ih +2.6v and v dd 2.4v and v dd q 1.4v for t 200ms during normal operation, v dd q must not exceed v dd . control input signals (ld#, r/w#, etc.) may not have pulse widths less than t khkl (min) or operate at frequencies exceeding f kf (max). tdo 1.25v 20pf z = 50 ? o 50 ? table 20: 3.3v v dd , tap dc electrical characteristics and operating conditions 0oc t a +70oc; v dd = 3.3v 0.165v unless otherwise noted description conditions symbol min max units notes input high (logic 1) voltage v ih 2.0 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.8 v 1, 2 input leakage current 0v v in v dd il i -5.0 5.0 a output leakage current output(s) disabled, 0v v in v dd q (dqx) il o -5.0 5.0 a output low voltage i olc = 100a v ol1 0.7 v 1 i olt = 2ma v ol2 0.8 v 1 output high voltage i ohc = -100a v oh1 2.9 v 1 i oht = -2ma v oh2 2.0 v 1 table 21: 2.5v v dd , tap dc electrical characteristics and operating conditions 0oc t a +70oc; v dd = 2.5v 0.125v unless otherwise noted description conditions symbol min max units notes input high (logic 1) voltage v ih 1.7 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.7 v 1, 2 input leakage current 0v v in v dd il i -5.0 5.0 a output leakage current output(s) disabled, 0v v in v dd q (dqx) il o -5.0 5.0 a output low voltage i olc = 100a v ol1 0.2 v 1 i olt = 2ma v ol2 0.7 v 1 output high voltage i ohc = -100a v oh1 2.1 v 1 i oht = -2ma v oh2 1.7 v 1
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 28 ?2003, micron technology inc. table 22: identification register definitions instruction field bit configuration description revision number (31:28) 0000 reserved for version number. device depth (27:23) 01000 00111 defines depth of 2mb. defines depth of 1mb. device width (22:18) 00011 00100 defines width of x18 bits. defines width of x32 or x36 bits. micron device id (17:12) xxxxxx reserved for future use. micron jedec id code (11:1) 00000101100 allows unique identification of sram vendor. id register presence indicator (0) 1 indicates the presence of an id register. table 23: scan register sizes register name bit size instruction 3 bypass 1 id 32 boundary scan: x18, x32, x36 76 table 24: instruction codes instruction code description extest 000 captures i/o ring contents. places the boundary scan register between tdi and tdo. forces all sram outputs to high-z state. this instruction is not 1149.1-compliant. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operations. sample z 010 captures i/o ring contents. places the boundary scan register between tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use: this instruction is reserved for future use. sample/preload 100 captures i/o ring contents. places the boundary scan register between tdi and tdo. does not affect sram operation. this instruction does not implement 1149.1 preload function and is therefor e not 1149.1-compliant. reserved 101 do not use: this instruction is reserved for future use. reserved 110 do not use: this instruction is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operations.
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 29 ?2003, micron technology inc. table 25: 165-ball fbga boundary scan order (x18) bit# signal name ball id bit# signal name ball id 1nf 11p 39clk 6b 2 sa 2r 40 ce2# 6a 3 sa 8r 41 bw1# 5b 4 sa 8p 42 nc 5a 5 sa 9r 43 bw2# 4a 6 sa 9p 44 nc 4b 7 sa 10r 45 ce2 3b 8 sa 10p 46 ce# 3a 9nf 6n 47 sa 2a 10 zz 11h 48 sa 2b 11 nc 11n 49 nc 1b 12 nc 11m 50 nc 1a 13 nc 11l 51 nc 1c 14 nc 11k 52 nc 1d 15 nc 11j 53 nc 1e 16 dqa 10m 54 nc 1f 17 dqa 10l 55 nc 1g 18 dqa 10k 56 dqb 2d 19 dqa 10j 57 dqb 2e 20 dqa 11g 58 dqb 2f 21 dqa 11f 59 dqb 2g 22 dqa 11e 60 dqb 1j 23 dqa 11d 61 dqb 1k 24 dqpa 11c 62 dqb 1l 25 nc 10g 63 dqb 1m 26 nc 10f 64 dqpb 1n 27 nc 10e 65 nc 2h 28 nc 10d 66 nc 2k 29 sa 11a 67 nc 2l 30 nc 11b 68 nc 2m 31 sa 10b 69 sa 11r 32 sa 10a 70 mode (lbo#) 1r 33 sa 9a 71 sa 3p 34 sa 9b 72 sa 3r 35 adv/ld# 8a 73 sa 4p 36 oe# 8b 74 sa 4r 37 cke# 7a 75 sa1 6p 38 r/w# 7b 76 sa0 6r
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 30 ?2003, micron technology inc. table 26: 165-ball fbga boundary scan order (x32) bit# signal name ball id bit# signal name ball id 1nf 11p 39clk 6b 2 sa 2r 40 ce2# 6a 3 sa 8r 41 bw1# 5b 4 sa 8p 42 bw2# 5a 5 sa 9r 43 bw3# 4a 6 sa 9p 44 bw4# 4b 7 sa 10r 45 ce2 3b 8 sa 10p 46 ce# 3a 9nf 6n 47 sa 2a 10 zz 11h 48 sa 2b 11 nf 11n 49 nc 1b 12 dqa 11m 50 nc 1a 13 dqa 11l 51 nf 1c 14 dqa 11k 52 dqc 1d 15 dqa 11j 53 dqc 1e 16 dqa 10m 54 dqc 1f 17 dqa 10l 55 dqc 1g 18 dqa 10k 56 dqc 2d 19 dqa 10j 57 dqc 2e 20 dqb 11g 58 dqc 2f 21 dqb 11f 59 dqc 2g 22 dqb 11e 60 dqc 1j 23 dqb 11d 61 dqd 1k 24 dqb 10g 62 dqd 1l 25 dqb 10f 63 dqd 1m 26 dqb 10e 64 dqd 2j 27 dqb 10d 65 dqd 2k 28 nf 11c 66 dqd 2l 29 nc 11a 67 dqd 2m 30 nc 11b 68 nf 1n 31 sa 10b 69 sa 11r 32 sa 10a 70 mode (lbo#) 1r 33 sa 9a 71 sa 3p 34 sa 9b 72 sa 3r 35 adv/ld# 8a 73 sa 4p 36 oe# 8b 74 sa 4r 37 cke# 7a 75 sa1 6p 38 r/w# 7b 76 sa0 6r
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 31 ?2003, micron technology inc. table 27: 165-ball fbga boundary scan order (x36) bit# signal name ball id bit# signal name ball id 1nf 11p 39clk 6b 2 sa 2r 40 ce2# 6a 3 sa 8r 41 bw1# 5b 4 sa 8p 42 bw2# 5a 5 sa 9r 43 bw3# 4a 6 sa 9p 44 bw4# 4b 7 sa 10r 45 ce2 3b 8 sa 10p 46 ce# 3a 9nf 6n 47 sa 2a 10 zz 11h 48 sa 2b 11 dqpa 11n 49 nc 1b 12 dqa 11m 50 nc 1a 13 dqa 11l 51 dqpc 1c 14 dqa 11k 52 dqc 1d 15 dqa 11j 53 dqc 1e 16 dqa 10m 54 dqc 1f 17 dqa 10l 55 dqc 1g 18 dqa 10k 56 dqc 2d 19 dqa 10j 57 dqc 2e 20 dqb 11g 58 dqc 2f 21 dqb 11f 59 dqc 2g 22 dqb 11e 60 dqd 1j 23 dqb 11d 61 dqd 1k 24 dqb 10g 62 dqd 1l 25 dqb 10f 63 dqd 1m 26 dqb 10e 64 dqd 2j 27 dqb 10d 65 dqd 2k 28 dqpb 11c 66 dqd 2l 29 nc 11a 67 dqd 2m 30 nc 11b 68 dqpd 1n 31 sa 10b 69 sa 11r 32 sa 10a 70 mode (lbo#) 1r 33 sa 9a 71 sa 3p 34 sa 9b 72 sa 3r 35 adv/ld# 8a 73 sa 4p 36 oe# 8b 74 sa 4r 37 cke# 7a 75 sa1 6p 38 r/w# 7b 76 sa0 6r
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 32 ?2003, micron technology inc. figure 19: 100-pin plastic tqfp (jedec lqfp) note: 1. all dimensions in inches (millim eters) or typical where noted. 2. package width and length do not include mold protrusi on; allowable mold protrusion is 0.25mm per side. 14.00 0.10 1.40 0.05 16.00 0.20 0.10 +0.10 -0.05 0.15 +0.03 -0.02 22.10 +0.10 -0.20 0.32 +0.06 -0.10 20.10 0.10 0.65 typ 0.625 1.60 max detail a see detail a 0.60 0.15 1.00 typ gage plane 0.25 0.10 pin #1 id max min ------------- -
? 8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 e-mail: prodmktg@micron.com, internet: http://www.m icron.com, customer comment line: 800-932-4992 micron, the m logo, and the micron logo are trademarks and/or service marks of micron technology, inc. zbt and zero bus turnaro und are trade- marks of integrated device technology, inc., and the architecture is supported by micron technology, inc., and motorola, inc. 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram ?2003, micron technology inc. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 33 figure 20: 165-ball fbga note: 1. all dimensions in inches (millim eters) or typical where noted. data sheet designation advance: this data sheet contains initial descriptions of products still under development. 10.00 14.00 15.00 0.10 1.00 typ 1.00 typ 5.00 0.05 13.00 0.10 pin a1 id pin a1 id ball a1 mold compound: epoxy novolac substrate: plastic laminate 6.50 0.05 7.00 0.05 7.50 0.05 1.20 max solder ball material: eutectic 62% sn, 36% pb, 2% ag solder ball pad: ? .33mm solder ball diameter refers to post reflow condition. the pre-reflow diameter is ? 0.40 seating plane 0.85 0.075 0.12 c c 165x ? 0.45 ball a11 max min ------------- -
36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram 0.13m process advance 36mb: 2 meg x 18, 1 meg x 32/36 flow-through zbt sram micron technology, inc., reserves the right to change products or specifications without notice. mt55l2my18f_16_b.fm - rev. b, pub. 1/03 34 ?2003, micron technology inc. revision history revised fbga dimensions for 165-ball fbga ..................................................................................... .....................1/03 new advance data sheet for 0.13m process; rev a; pub. 11/02 .................................................................. .....11/02

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