? 2004 ixys all rights reserved 1 - 3 mcc 200 mcd 200 ixys reserves the right to change limits, test conditions and dimensions 448 i trms = 2x340 a i tavm = 2x196 a v rrm = 1400-1800 v v rsm v rrm type v dsm v drm vv 1500 1400 mcc 200-14io1 mcd 200-14io1 1700 1600 mcc 200-16io1 mcd 200-16io1 1900 1800 mcc 200-18io1 mcd 200-18io1 data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. features ? international standard package direct copper bonded al 2 o 3 -ceramic base plate planar passivated chips isolation voltage 3600 v~ ul registered, e 72873 keyed gate/cathode twin pins applications motor control power converter heat and temperature control for industrial furnaces and chemical processes lighting control contactless switches advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits symbol conditions maximum ratings i trms / i frms t vj = t vjm 340 a i tavm / i favm t c = 90c; 180 sine 196 a t c = 85c; 180 sine 216 a i tsm / i fsm t vj = 45c; t = 10 ms (50 hz), sine 8000 a v r = 0 t = 8.3 ms (60 hz), sine 8600 a t vj = t vjm t = 10 ms (50 hz), sine 7000 a v r = 0 t = 8.3 ms (60 hz), sine 7500 a i 2 dt t vj = 45c; t = 10 ms (50 hz), sine 320 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 311 000 a 2 s t vj = t vjm ; t = 10 ms (50 hz), sine 245 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 236 000 a 2 s (di/dt) cr t vj = t vjm ; repetitive; i t = 500 a 100 a/s f = 50hz; t p = 200s; v d = 2 / 3 v drm ; i g = 0.5 a; non repetitive; i t = 500 a 500 a/s di g /dt = 0.5 a/s (dv/dt) cr t vj = t vjm ; v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ; t p = 30 s 120 w i t = i tavm ; t p = 500 s 60 w p gav 20 w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms; t = 1 min 3000 v~ i isol 1 ma; t = 1 s 3600 v~ m d mounting torque (m6) 2.25-2.75/20-25 nm/lb.in. terminal connection torque (m6) 4.5-5.5/40-48 nm/lb.in. weight typical including screws 125 g thyristor modules 1 2 3 6 7 5 4 3671 542 31542 mcc mcd
? 2004 ixys all rights reserved 2 - 3 mcc 200 mcd 200 ixys reserves the right to change limits, test conditions and dimensions 448 6 5 4 3 1 i g t gd v v g i g 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 1 10 100 2 0.01 0.1 1 10 a i gd , t vj = 130c a v t , v f i t , i f 0.00.40.81.21.62.0 0 100 200 300 400 500 v a t vj = 25c t vj = 125c 3: i gt , t vj = -40c 2: i gt , t vj = 25c 1: i gt , t vj = 125c 4: p gm = 20 w 5: p gm = 60 w 6: p gm = 120 w s typ. limit t vj = 25c symbol conditions characteristic values i rrm , i drm t vj = t vjm ; v r = v rrm ; v d = v drm 15 ma v t / v f i t , i f = 200 a; t vj = 25c 1.20 v v t0 for power-loss calculations only (t vj = 125c) 0.8 v r t 1.0 m ? v gt v d = 6 v; t vj = 25c 2 v t vj = -40c 3 v i gt v d = 6 v; t vj = 25c 150 ma t vj = -40c 220 ma v gd t vj = t vjm ;v d = 2 / 3 v drm 0.25 v i gd 10 ma i l t vj = 25c; t p = 30 s; v d = 6 v 200 ma i g = 0.5 a; di g /dt = 0.5 a/s i h t vj = 25c; v d = 6 v; r gk = 150 ma t gd t vj = 25c; v d = ? v drm 2s i g = 0.5 a; di g /dt = 0.5 a/s t q t vj = t vjm ; i t = 300 a, t p = 200 s; -di/dt = 10 a/s typ. 200 s v r = 100 v; dv/dt = 50 v/s; v d = 2 / 3 v drm q s t vj = t vjm ; i t = 300 a, -di/dt = 50 a/s 550 c i rm 235 a r thjc per thyristor; dc current 0.13 k/w per module 0.065 k/w r thjh per thyristor; dc current 0.18 k/w per module 0.09 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 dimensions in mm (1 mm = 0.0394") optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type zy 180l (l = left for pin pair 4/5) ul 758, style 1385, type zy 180r (r = right for pin pair 6/7) csa class 5851, guide 460-1-1 fig. 1 gate trigger characteristics fig. 2 gate trigger delay time fig. 3 forward current versus voltage drop
? 2004 ixys all rights reserved 3 - 3 mcc 200 mcd 200 ixys reserves the right to change limits, test conditions and dimensions 448 i 2 dt t c t 110 10 4 10 5 10 6 a 2 s 0 25 50 75 100 125 150 0 100 200 300 400 i tsm i fsm a a c i tavm i favm s t vj = 45c ms t s t z thjc k/w t vj = 125c 0.001 0.01 0.1 1 0 2000 4000 6000 8000 80 % v rrm t vj = 45c 50 hz t vj = 125c 180 sin 120 60 30 dc 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 25 50 75 100 125 150 0 200 400 600 0 300 600 900 1200 1500 1800 2100 w p tot a i davm t a c 0 25 50 75 100 125 150 0 100 200 300 0 100 200 300 400 w p tot a i trms /i frms t a c r thka k/w 0.1 0.2 0.3 0.4 0.6 0.8 1.0 180 sin 120 60 30 dc circuit b6 0.03 0.04 0.06 0.08 0.1 0.15 0.2 r thka k/w 120 180 dc 60 30 fig. 7 power dissipation versus on-state current and ambient temperature (per thyristor or diode) fig. 4 surge overload current i tsm / fsm : crest value, t: duration fig. 5 2 dt versus time (1-10 ms) fig. 6 maximum forward current at case temperature fig. 9 transient thermal impedance junction to case at various condition angles (per thyristor or diode) constants for z thjc calculation (dc): ir thi (k/w) t i (s) 1 0.01 0.00014 2 0.0065 0.019 3 0.025 0.18 4 0.0615 0.52 5 0.027 1.6 fig. 8 3 ~ rectifier bridge: power dissipation v ersus direct output current and ambient temperature
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