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www.irf.com 1 12/22/05 irf6607 notes through are on page 10 application specific mosfets ideal for cpu core dc-dc converters low conduction losses high cdv/dt immunity low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface mount techniques description the irf6607 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manu- facturing methods and process. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc- tion and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operating at higher frequencies. the irf6607 has been optimized for parameters that are critical in synchronous buck converters including rds(on), gate charge and cdv/dt-induced turn on immunity. the irf6607 offers particularly low rds(on) and high cdv/dt immunity for synchronous fet applications. hexfet power mosfet directfet isometric v dss r ds ( on ) max qg(typ.) 30v 3.3m ? @v gs = 10v 50nc 4.4m ? @v gs = 4.5v sq sx st mq mx mt applicable directfet outline and substrate outline (see p.9,10 for details) absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 35 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted ??? 1.0 max. 27 22 220 12 30 94 -40 to + 150 3.6 0.029 2.3 42
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 29 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.5 3.3 m ? ??? 3.4 4.4 v gs(th) gate threshold voltage 1.3 ??? 2.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 30 a ??? ??? 50 a ??? ??? 100 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 120 ??? ??? s q g total gate charge ??? 50 75 q gs1 pre-vth gate-to-source charge ??? 13 ??? q gs2 post-vth gate-to-source charge ??? 4.0 ??? nc q g d gate-to-drain charge ??? 16 ??? q godr gate charge overdrive ??? 18 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 20 ??? q oss output charge ??? 30 ??? nc r g gate resistance ??? 0.86 1.9 ? t d(on) turn-on delay time ??? 60 ??? t r rise time ??? 8.0 ??? t d(off) turn-off delay time ??? 32 ??? ns t f fall time ??? 13 ??? c iss input capacitance ??? 6930 ??? c oss output capacitance ??? 1260 ??? pf c rss reverse transfer capacitance ??? 510 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 38 (body diode) a i sm pulsed source current ??? ??? 220 (body diode) v sd diode forward voltage ??? 1.0 1.3 v t rr reverse recovery time ??? 46 69 ns q rr reverse recovery charge ??? 54 81 nc ??? v gs = 4.5v typ. ??? ??? i d = 20a v gs = 0v v ds = 15v i d = 20a 51 t j = 25c, i f = 20a di/dt = 100a/s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. 20 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 25a max. v gs = 4.5v, i d = 20a v ds = v gs , i d = 250a v ds = 24v, v gs = 0v mosfet symbol clamped inductive load v ds = 15v, i d = 20a conditions 0.36 ? = 1.0mhz v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 70c v ds = 15v v gs = 12v v gs = -12v
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 25c vgs top 12v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 150c vgs top 12v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 r , drain-to-source on resistance (normalized) ds(on) v = i = gs d 10v 25a t j , junction temperature (c)
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 20a 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 i , drain current (a) d -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 20 40 60 80 100 120 e , single pulse avalanche energy (mj) as i d top bottom 8.9a 16a 20a starting t j , junction temperature (c) fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + -
www.irf.com 7 fig 15.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ?
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8 www.irf.com directfet outline dimension, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. max 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.028 0.003 0.007 min 6.25 4.80 3.85 0.35 0.78 0.88 1.78 0.98 0.63 0.88 2.46 0.59 0.03 0.08 max 6.35 5.05 3.95 0.45 0.82 0.92 1.82 1.02 0.67 1.01 2.63 0.70 0.08 0.17 min 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.023 0.001 0.003 code a b c d e f g h j k l m n p dimensions metric imperial
www.irf.com 9 directfet substrate and pcb layout, mt outline (mediumsize can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g d dd d s s directfet part marking
10 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.25mh r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%.
surface mounted on 1 in. square cu board. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. r is measured at
data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/05 directfet tape & reel dimension (showing component orientation). metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6607). for 1000 parts on 7" reel, order IRF6607TR1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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