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document number: 90350 www.vishay.com s10-1135-rev. c, 10-may-10 1 power mosfet irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? surface mountable (order as irfr9020, sihfr9020) ? straight lead option (order as irfu9020, sihfu9020) ? repetitive avalanche ratings ? dynamic dv/dt rating ? simple drive requirements ? ease of paralleling ? compliant to rohs directive 2002/95/ec description the power mosfet technology is the key to vishays advanced line of power mosfet transistors. the efficient geometry and unique processing of this latest state of the art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt. the power mosfet transistors also feature all of the well established advantages of mosfets such as voltage control, very fast switchin g, ease of paralleling and temperature stability of the electrical parameters. surface mount packages enha nce circuit performance by reducing stray inductances and capacitance. the to-252 surface mount package brings the advantages of power mosfets to high volume applications where pc board surface mounting is desirabl e. the surface mount option irfr9020, sihfr9020 is provided on 16mm tape. the straight lead option irfu9020, sihfu9020 of the device is called the ipak (to-251). they are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, dc-to-dc converters, and a wide range of consumer products. note a. see device orientation. product summary v ds (v) - 50 r ds(on) ( )v gs = - 10 v 0.28 q g (max.) (nc) 14 q gs (nc) 6.5 q gd (nc) 6.5 configuration single s g d p-channel mosfet dpak (to-252) ipak (to-251) g d s s d g d ordering information package dpak (to-252) dpak (to- 252) dpak (to-252) ipak (to-251) lead (pb)-free and halogen-fr ee sihfr9020-ge3 sihfr9020tr-ge3 a sihfr9020trl-ge3 a sihfu9020-ge3 lead (pb)-free irfr9020pbf irfr9020trpbf a irfr9020trlpbf a irfu9020pbf sihfr9020-e3 sihfr9020t-e3 a siHFR9020TL-E3 a sihfu9020-e3 snpb irfr9020 irfr9020tr a irfr9020trl a irfu9020 sihfr9020 sihfr9020t a sihfr9020tl a sihfu9020 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 50 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 9.9 a t c = 100 c - 6.3 pulsed drain current a i dm - 40 linear derating factor 0.33 w/c * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 90350 2 s10-1135-rev. c, 10-may-10 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 14). b. v dd = - 25 v, starting t j = 25 c, l = 5.1 mh, r g = 25 , peak i l = - 9.9 a c. i sd - 9.9 a, di/dt -120 a/s, v dd 40 v, t j 150 c. d. 0.063" (1.6 mm) from case. e. when mounted on 1" square pcb (fr-4 or g-10 material). single pulse avalanche energy b e as 250 mj repetitive avalanche current a i ar - 9.9 a repetitive avalanche energy a e ar 4.2 mj maximum power dissipation t c = 25 c p d 42 w peak diode recovery dv/dt c dv/dt 5.8 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) for 10 s 300 d thermal resistance ratings parameter symbol min. typ. max. unit maximum junction-to-ambient r thja - - 110 c/w case-to-sink r thcs -1.7- maximum junction-to-case (drain) r thjc --3.0 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit specifications t j = 25 c, unless otherwise noted parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 50 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 500 na zero gate voltage drain current i dss v ds = max. rating, v gs = 0 v - - 250 a v ds = 0.8 x max. rating, v gs = 0 v, t j = 125 c - - 1000 drain-source on-state resistance r ds(on) v gs = - 10 v i d = 5.7 a b - 0.20 0.28 forward transconductance g fs v ds - 50 v, i ds = - 5.7 a 2.3 3.5 - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 9 - 490 - pf output capacitance c oss - 320 - reverse transfer capacitance c rss -70- total gate charge q g v gs = - 10 v i d = - 9.7 a, v ds = 0.8 x max. rating, see fig. 16 (independent operating temperature) -9.414 nc gate-source charge q gs -4.36.5 gate-drain charge q gd -4.36.5 turn-on delay time t d(on) v dd = - 25 v, i d = - 9.7 a, r g = 18 , r d = 2.4 , see fig. 15 (independent operating temperature) -8.212 ns rise time t r -5766 turn-off delay time t d(off) -1218 fall time t f -2538 internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact. -4.5- nh internal source inductance l s -7.5- d s g
document number: 90350 www.vishay.com s10-1135-rev. c, 10-may-10 3 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 14). b. pulse width 300 s; duty cycle 2 %. typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics fig. 3 - typical saturation characteristics fig. 4 - maximum safe operating area drain-source body diode characteristics continuous source-dra in diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 9.9 a pulsed diode forward current a i sm --- 40 body diode voltage v sd t j = 25 c, i s = - 9.9 a, v gs = 0 v b --- 6.3v body diode reverse recovery time t rr t j = 25 c, i f = - 9,7 a, di/dt = 100 a/s b 56 110 280 ns body diode reverse recovery charge q rr 0.17 0.34 0.85 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit s d g
www.vishay.com document number: 90350 4 s10-1135-rev. c, 10-may-10 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix fig. 5 - typical transconductance vs. drain current fig. 6 - typical source-drain diode forward voltage fig. 7 - breakdown voltage vs. temperature fig. 8 - normalized on-resistance vs. temperature
document number: 90350 www.vishay.com s10-1135-rev. c, 10-may-10 5 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix fig. 9 - typical capacitance vs. drain-to-source voltage fig. 10 - typical gate charge vs. gate-to-source voltage fig. 11 - typical on-res istance vs. drain current fig. 12 - maximum drain curre nt vs. case temperature
www.vishay.com document number: 90350 6 s10-1135-rev. c, 10-may-10 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix fig. 13a - maximum avalanche vs. starting junction temperature fig. 13b - unclamped inductive test circuit fig. 13c - unclamped inductive waveforms fig. 14 - maximum effective transient thermal impedance, junction-to-case vs. pulse duration i as v ds v dd v ds t p i l
document number: 90350 www.vishay.com s10-1135-rev. c, 10-may-10 7 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix fig. 15a - switching time waveforms fig. 15b - switching time test circuit fig. 16a - basic gate charge waveform fig. 16b - gate charge test circuit v gs 10 % 90 % v ds t d(on) t r t d(off) t f q gs q gd q g v g charge - 10 v
www.vishay.com document number: 90350 8 s10-1135-rev. c, 10-may-10 irfr9020, irfu9020, sihfr9020, sihfu9020 vishay siliconix fig. 17 - for p-channel vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350 . p.w. period di/dt diode recovery dv/dt body diode forward drop body diode forward current driver gate drive inductor current d = p.w. period + - - - - + + + peak dio d e recovery d v/ d t test circuit ? dv/dt controlled by r g ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low stray inductance ? g round plane ? low leakage inductance current tran s former r g ? compliment n-channel of d.u.t. for driver v dd ? i s d controlled by duty factor d note note a. v gs = - 5 v for logic level and - 3 v drive device s v gs = - 10 v a d.u.t. l s d waveform d.u.t. v d s waveform v dd re-applied voltage ripple 5 % i s d rever s e recovery current
document number: 91344 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix to-252aa (high voltage) notes 1. package body sizes exclude mold flash, protrusion or gate bu rrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 2. package body sizes determined at the outermo st extremes of the plastic body exclusive of mold flas h, gate burrs and interlea d flash, but including any mismatch between the top and bottom of the plastic body. 3. the package top may be smaller than the package bottom. 4. dimension "b" does not include dambar prot rusion. allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimens ion at maximum material condition. the dambar cannot be located on the lower radius of the foot. e b 3 l3 l4 b 2 e b d h e1 d1 a c2 l1 l2 c a1 l millimeters inches dim. min. max. min. max. e 6.40 6.73 0.252 0.265 l 1.40 1.77 0.055 0.070 l1 2.743 ref 0.108 ref l2 0.508 bsc 0.020 bsc l3 0.89 1.27 0.035 0.050 l4 0.64 1.01 0.025 0.040 d 6.00 6.22 0.236 0.245 h 9.40 10.40 0.370 0.409 b 0.64 0.88 0.025 0.035 b2 0.77 1.14 0.030 0.045 b3 5.21 5.46 0.205 0.215 e 2.286 bsc 0.090 bsc a 2.20 2.38 0.087 0.094 a1 0.00 0.13 0.000 0.005 c 0.45 0.60 0.018 0.024 c2 0.45 0.58 0.018 0.023 d1 5.30 - 0.209 - e1 4.40 - 0.173 - 0' 10' 0' 10' ecn: s-81965-rev. a, 15-sep-08 dwg: 5973
document number: 91362 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix to-251aa (high voltage) notes 1. dimensioning and toler ancing per asme y14.5m-1994. 2. dimension are shown in inches and millimeters. 3. dimension d and e do not include mold flash. mold flash s hall not exceed 0.13 mm (0.005") per side. these dimensions are mea sured at the outermost extremes of the plastic body. 4. thermal pad contour optional with dimensions b4, l2, e1 and d1. 5. lead dimension uncontrolled in l3. 6. dimension b1, b3 and c1 apply to base metal only. 7. outline conforms to jedec outline to-251aa. base metal plating b 1, b 3 ( b , b 2) c1 (c) section b - b and c - c d a c2 c lead tip 5 5 (dat u m a) thermal pad e1 4 d1 v ie w a - a a1 a a c seating plane c c b b 1 2 b 4 4 4 3 5 l1 l l3 3 x b 2 3 x b 3 b 4 e 2 x e 0.010 c b m a 0.25 0.010 b a 0.25 l2 a c m millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 2.18 2.39 0.086 0.094 d1 5.21 - 0.205 - a1 0.89 1.14 0.035 0.045 e 6.35 6.73 0.250 0.265 b 0.64 0.89 0.025 0.035 e1 4.32 - 0.170 - b1 0.65 0.79 0.026 0.031 e 2.29 bsc 2.29 bsc b2 0.76 1.14 0.030 0.045 l 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 l1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 l2 0.89 1.27 0.035 0.050 c 0.46 0.61 0.018 0.024 l3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35' d 5.97 6.22 0.235 0.245 ecn: s-82111-rev. a, 15-sep-08 dwg: 5968
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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