1 power transistors 2sD1485 silicon npn triple diffusion planar type for high power amplification complementary to 2sb1054 n features l extremely satisfactory linearity of the forward current transfer ratio h fe l wide area of safe operation (aso) l high transition frequency f t l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 100 100 5 8 5 60 3 150 C55 to +155 unit v v v a a w ?c ?c t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ebo h fe1 h fe2 * h fe3 v be v ce(sat) f t c ob conditions v cb = 100v, i e = 0 v eb = 3v, i c = 0 v ce = 5v, i c = 20ma v ce = 5v, i c = 1a v ce = 5v, i c = 3a v ce = 5v, i c = 3a i c = 3a, i b = 0.3a v ce = 5v, i c = 0.5a, f = 1mhz v cb = 10v, i e = 0, f = 1mhz min 20 60 20 typ 20 90 max 50 50 200 1.8 2 unit m a m a v v mhz pf * h fe2 rank classification rank q p h fe2 60 to 120 100 to 200 unit: mm 1:base 2:collector 3:emitter topC3 full pack package(a) 15.0 0.3 21.0 0.5 16.2 0.5 12.5 solder dip 3.5 0.7 15.0 0.2 5.0 0.2 11.0 0.2 10.9 0.5 5.45 0.3 3 2 1 1.1 0.1 2.0 0.2 0.6 0.2 2.0 0.1 f 3.2 0.1 3.2
2 power transistors 2sD1485 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 80 60 20 50 70 40 10 30 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3.0w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 10 8 6 4 2 t c =25?c i b =100ma 80ma 40ma 20ma 10ma 60ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.0 1.6 0.4 1.2 0.8 0 8 6 2 5 7 4 1 3 t c =100?c 25?c ?5?c v ce =5v base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =5v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =5v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c 10ms t=1ms dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 10 ? 1 10 10 2 10 3 (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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