LMBTA44LT1G npn epitaxial planar transistor description the LMBTA44LT1G is designed for application features ? high breakdown voltage: vceo=400(min.) at ic=1ma ? complementary to lmbta94lt1g absolute maximum ratings ? maximum temperatures storage temperatur e ............................................................................................ -55 ~ +150 c junction temperature .................................................................................... +150 c maximum ? maximum power dissipation total power dissipation (ta=25 c) ................................................................................ 350 mw ? maximum voltages and currents (ta=25 c) vcbo collector to base voltage ...................................................................................... 400 v vceo collector to emitter voltage ................................................................................... 400 v vebo emitter to base voltage ............................................................................................. 5 v ic collector current ...................................................................................................... 20 0 ma that requires high voltage. leshan radio company, ltd. sot? 23 LMBTA44LT1G 1 3 2 1 base 2 emitter collector 3 we declare that the material of product compliance with rohs requirements. device marking lmb t a44 l t1g = 3d electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 400 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v(br) ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =400v, i e =0 0.1 a collector cut-off current i ceo v ce = 35 0v 5 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a h fe(1) v ce =10v, i c =10 ma 80 300 h fe(2) v ce =10v, i c =1ma 5 0 dc current gain h fe(3) v ce =10v, i c =50 ma 4 0 v ce (sat) i c =10 ma, i b =1ma 0.2 v collector-emitter saturation voltage v ce (sat) i c =50 ma, i b =5ma 0.3 v base-emitter sataration voltage v be (sat) i c =10 ma, i b = 1 ma 0. 9 v transition frequency f t v ce = 1 0 v, i c =20ma 50 mhz rev.o 1/3
characteristics curve leshan radio company, ltd. LMBTA44LT1G current gain & collector current 1 10 100 1000 1 10 100 1000 collector current-i c (ma) hfe hfe @ v ce =10v 25 o c 75 o c 125 o c saturation voltage & collector current 10 100 1000 0.1 1 10 100 1000 collector current-i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =10i b capacitance & reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob saturation voltage & collector current 100 1000 0.1 1 10 100 1000 collector current-i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v be(sat) @ i c =10i b rev.o 2/3
leshan radio company, ltd. LMBTA44LT1G notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3
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