?2002 fairchild semiconductor corporation rev. a2, september 2002 ksc2859 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe1 classification symbol parameter value units v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 500 ma p c collector power dissipation 150 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units i ceo collector cut-off current v cb =35v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe1 h fe2 dc current gain v ce =1v, i c =100ma v ce =6v, i c =400ma 70 25 240 v ce (sat) collector-emitter saturation voltage i c =100ma, i b =10ma 0.1 0.25 v v be (on) base-emitter on voltage v ce =1v, i c =100ma 0.8 1.0 v f t current gain-bandwidth product v ce =6v, i c =20ma 300 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 7 pf classification o y h fe1 70 ~ 140 120 ~ 240 1. base 2. emitter 3. collector ksc2859 low frequency power amplifier ? complement to ksa1182 e1o marking h fe grade 1 2 3 sot-23
?2002 fairchild semiconductor corporation ksc2859 rev. a2, september 2002 typical characteristics figure 1. static characteristics figure 2. base-emitter on voltage figure 3. dc current gain figure 4. output capacitance figure 5. saturation voltage 012345678910 0 5 10 15 20 25 30 35 40 45 50 i b = 400 a i b = 350 a i b = 250 a i b = 100 a i b = 350 a i b = 300 a i b = 200 a i b = 150 a i b = 50 a i c [ma], collector current v ce [v], collector-emitter voltage 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 v ce = 1v i c [ma], collector current v be [mv], saturation voltage 1 10 100 1000 1 10 100 1000 v ce = 1v h fe , dc current gain i c [ma], collector current 110100 1 10 f = 1mhz i e = 0 c ob [pf], output capacitance v cb [v], collector-base voltage 0.1 1 10 100 0.01 0.1 1 10 v ce (sat) v be (sat) i c = 10 i b v ce (sat), v be (sat) [v], saturation voltage i c [ma], collector current
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package dimensions ksc2859 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a2, september 2002
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