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| www.irf.com 1 irf5802pbf smps mosfet hexfet power mosfet high frequency dc-dc converters benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current lead-free halogen-free parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 0.9 i d @ t a = 70c continuous drain current, v gs @ 10v 0.7 a i dm pulsed drain current 7.0 p d @t a = 25c power dissipation 2.0 w linear derating factor 0.02 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 7.1 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 v dss r ds(on) max i d 150v 1.2 @v gs = 10v 0.9a tsop-6 parameter max. units r ja maximum junction-to-ambient 62.5 c/w thermal resistance
2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 0.55 ??? ??? s v ds = 50v, i d = 0.54a q g total gate charge ??? 4.5 6.8 i d = 0.54a q gs gate-to-source charge ??? 1.0 1.5 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 2.4 3.6 v gs = 10v, t d(on) turn-on delay time ??? 6.0 ??? v dd = 75v t r rise time ??? 1.6 ??? i d = 0.54a t d(off) turn-off delay time ??? 7.5 ??? r g = 6.0 ? t f fall time ??? 9.2 ??? v gs = 10v c iss input capacitance ??? 88 ??? v gs = 0v c oss output capacitance ??? 26 ??? v ds = 25v c rss reverse transfer capacitance ??? 7.7 ??? pf ? = 1.0mhz c oss output capacitance ??? 110 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 14 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 3.0 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 9.5 mj i ar avalanche current ??? 0.9 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed sourc e current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 0.54a, v gs = 0v t rr reverse recovery time ??? 46 69 ns t j = 25c, i f = 0.54a q rr reverse recoverycharge ??? 55 83 nc di/dt = 100a/s diode characteristics 1.8 18 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.19 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 1.2 ? v gs = 10v, i d = 0.54a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.5v 7.0v 6.5v 6.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 7.5v 7.0v 6.5v 6.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 0.1 1 10 6 8 10 12 14 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 0.9a fig 4. normalized on-resistance vs. temperature 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 1 2 3 4 5 6 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 0.54a v = 30v ds v = 75v ds v = 120v ds fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c t j = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 5 10 15 20 25 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.40a 0.70a 0.90a 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 v gs, gate -to -source voltage (v) 0.80 1.20 1.60 2.00 2.40 2.80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.54a 0 2 4 6 i d , drain current (a) 0.00 2.00 4.00 6.00 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v www.irf.com 7 ! " " # " " " " $ " % & ' ( ! ) ) " " *+ ) " ,$ ) " *+ - . / ' 0 1 % 2 ' & 3 ' 4 % 5 6 4 ' ' 6 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( ' 0 7 5 ' ' - . / ' 1 ' - % 4 & 3 ' 9 0 5 & / : ; 1 ' 5 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( : 4 . 5 ' " " " " http://www.irf.com/package/ 8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 23mh r g = 25 ? , i as = 0.54a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 0.54a, di/dt 89a/s, v dd v (br)dss , t j 150c data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. |
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