1 power f-mos fets unit: mm 2SK1607 silicon n-channel power f-mos fet n features l high avalanche energy capacity l v gss : 30v guaranteed l low r ds(on) , high-speed switching characteristic n applications l high-speed switching (switching power supply) l for high-frequency power amplification n absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 450 30 13 26 200 120 2.5 150 - 55 to +150 unit v v a a mj w c c n electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage avalanche energy capacity gate threshold voltage drain to source on-resistance forward transfer admittance input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time fall time turn-off time (delay time) symbol i dss i gss v dss eas * v th r ds(on) | y fs | c iss c oss c rss t on t f t d(off) conditions v ds = 360v, v gs = 0 v gs = 30v, v ds = 0 i d = 1ma, v gs = 0 l = 2.4mh, i d = 13a, v dd = 50v v ds = 25v, i d = 1ma v gs = 10v, i d = 7a v ds = 25v, i d = 7a v ds = 20v, v gs = 0, f = 1mhz v gs = 10v, i d = 7a v dd = 150v, r l = 21.4 w min 450 200 1 5 typ 0.34 8 1700 300 120 110 90 220 max 0.1 1 5 0.45 unit ma m a v mj v w s pf pf pf ns ns ns 1: gate 2: drain 3: source eiaj: sc-65(a) top-3 package (a) * single pulse * avalanche energy capacity test circuit 4.50.2 15.00.5 13.00.5 20.00.3 19.00.3 15.00.2 solder dip 4.00.1 4.00.1 12.5 3.5 16.20.5 10.50.5 10.90.5 5.450.3 1.10.1 f 3.20.1 2.00.2 2.00.1 1.40.3 0.60.2 123 v ds i d l d rain gate s ource r gs c v dd pvs
2 power f-mos fets i d ? v ds | y fs | ? i d r ds(on) ? i d i d ? v gs c iss , c oss , c rss ? v ds t on , t f , t d(off) ? i d p d ? ta area of safe operation (aso) eas ? t j 2SK1607 0 4 8 12 16 20 24 0 4 8 12 16 20 24 28 32 5v 6v 7v v gs =15v 10v 8v p d =120w t c =25?c drain to source voltage v ds ( v ) drain current i d ( a ) 04 8 121620242832 0 2 4 6 8 10 12 14 16 v ds =25v t c =25?c drain current i d ( a ) forward transfer admittance |y fs | ( s ) 04 8 121620242832 0 0.2 0.4 0.6 0.8 1.0 1.2 v gs =10v t c =25?c drain current i d ( a ) drain to source on-resistance r ds(on) ( w ) 010 8 26 4 0 4 8 12 16 20 24 28 32 v ds =25v t c =25?c gate to source voltage v gs ( v ) drain current i d ( a ) 0 40 80 120 160 200 240 10 30 100 300 1000 3000 10000 c iss c oss c rss f=1mhz t c =25?c drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 024681012 0 40 80 120 160 200 240 280 320 t d(off) t f t on v dd =150v v gs =10v t c =25?c drain current i d ( a ) switching time t on ,t f ,t d(off) ( ns ) 020 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 (1) t c =ta (2) without heat sink (p d =2.5w) (1) (2) ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) 1 10 100 1000 3 30 300 0.01 0.1 1 10 100 0.03 0.3 3 30 non repetitive pulse t c =25?c i dp t=1ms dc 10ms i d drain to source voltage v ds ( v ) drain current i d ( a ) 25 50 75 100 125 150 175 0 50 100 150 200 250 300 i d =13a v dd =50v junction temperature t j ( ?c ) avalanche energy capacity eas ( mj )
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