advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -20v small package outline r ds(on) 135m capable of 2.5v gate drive i d - 2.3a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice -55 to 150 linear derating factor 1.25 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range rohs-compliant product continuous drain current 3 -1.9 pulsed drain current 1 -12 parameter drain-source voltage gate-source voltage continuous drain current 3 201106303 1 AP9451GG rating - 20 + 12 -2.3 0.01 g d s d advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra lo w on-resistance and cost-effectiveness. d g s sot-89 d
AP9451GG electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-2.3a - - 135 m v gs =-2.5v, i d =-1.0a - - 240 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.5 v g fs forward transconductance v ds =-5v, i d =-2.3a - 2.3 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d = -2.3a - 5.5 9 nc q gs gate-source charge v ds = -15v - 1 - nc q gd gate-drain ("miller") charge v gs = -4.5v - 2.5 - nc t d(on) turn-on delay time 2 v ds =-10v - 9 - ns t r rise time i d =-1a - 25 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-5v - 20 - ns t f fall time r d =10 -10- ns c iss input capacitance v gs =0v - 270 430 pf c oss output capacitance v ds = -20v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 35 - pf r g gate resistance f=1.0mhz - 8 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25 , i s =-1a, v gs =0v - - -1.6 v t rr reverse recovery time 2 i s = -2.5a, v gs =0 v , - 27 - ns q rr reverse recovery charge di/dt=100a/s - 27 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mount on fr4 board, t Q 10s. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
fig 1. typical output characteristics fig 2. typical output characteristics 12 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance 100 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP9451GG 0 2 4 6 8 10 12 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o -10v - 7v - 5v -4.5v 0 2 4 6 8 10 12 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o 100 200 300 12345 -v gs , gate-to-source voltage (v) r ds(on) (m ) 0 0.4 0.8 1.2 1.6 2 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) 0 1 2 3 4 5 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o t j =150 o 0.0 0.5 1.0 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) i d =-1.0a t a =25 -10v - 7v - 5v -4.5v v gs = -3v i d = -2.3a v g = -10v v gs = -3v
AP9451GG fig 7. gate charge characteristics fig 8. typical capacitance characteristics 12 fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. transfer characteristics fig 12. gate charge waveform 4 0 1 2 3 4 5 0246 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2.4a v ds = -15v 10 100 1000 135791113151719212325 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh c iss c rss q v g q gs q gd q g charge -4.5v c oss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak tj = pdm x rthjc + tc rthja=100 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -id (a) 1ms 10ms 100ms 1s dc t a =25 single pulse operation in this area limited by r ds(on)
|
