symbol v ds v gs i dm t j , t stg symbol ty p max 26 40 50 75 r jl 14 24 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -15 -12.1 -80 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage -30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO4423 p-channel enhancement mode field effect transistor rev 4: may 2005 features v ds (v) = -30v i d = -15a r ds(on) < 7m ? (v gs = -20v) r ds(on) < 8.5m ? (v gs = -10v) esd rating: 6000v hbm general description the AO4423 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. it is esd protected. AO4423l (green product) is offered in a lead-free package. AO4423 is pb-free (meets rohs & sony 259 specifications). AO4423l is a green product ordering option. AO4423 and a o4423l are electrically identical. soic-8 top view g s s s d d d d d s g alpha & omega semiconductor, ltd.
AO4423, AO4423l symbol min typ max units bv dss -30 v -100 t j =55c -500 1 ? ? ? q g 82 nc q gs 16.8 nc q gd 23 nc t d(on) 18.5 ns t r 20 ns t d(off) 55 ns t f 30 ns t rr 43 ns q rr 38 nc -15 -12.8 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.0 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time forward transconductance diode forward voltage m ? v gs =-10v, i d =-15a i s =-1a,v gs =0v v ds =-5v, i d =-15a i dss na gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery charge i f =-15a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-6v, i d =-10a v gs =-10v, v ds =-5v v gs =-20v, i d =-15a reverse transfer capacitance i f =-15a, di/dt=100a/ s v ds =0v, v gs =25v body diode reverse recovery time v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-15a gate source charge gate drain charge r ds(on) static drain-source on-resistance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO4423, AO4423l typical electrical and thermal characteristics -15 -12.8 0 10 20 30 40 50 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -6v -10v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 4 6 8 10 12 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-20v i d = -15a v gs =-10v i d = -15a v gs =-6v i d = -10a 4 6 8 10 12 14 16 4 8 12 16 20 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-6v v gs =-10v i d =-15a 25c 125c v gs =-20v alpha & omega semiconductor, ltd.
AO4423, AO4423l typical electrical and thermal characteristics -15 -12.8 0 2 4 6 8 10 0 102030405060708090 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe o p eratin g area ( note e ) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-15a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d alpha & omega semiconductor, ltd.
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