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| inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx63/a/b/c description collector current -i c = 8a high dc current gain-h fe = 1000(min)@ i c = 3a complement to type bdx62/a/b/c applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdx63 80 bdx63a 100 bdx63b 120 v cbo collector-base voltage BDX63C 140 v bdx63 60 bdx63a 80 bdx63b 100 v ceo collector-emitter voltage BDX63C 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i cm collector current-peak 12 a i b b base current-continuous 0.15 a p c collector power dissipation @ t c =25 90 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.94 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx63/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx63 60 bdx63a 80 bdx63b 100 v ceo(sus) collector-emitter sustaining voltage BDX63C i c = 100ma ;i b =0 120 v v ce(sat) collector-emitter saturation voltage i c = 3a; i b = 12ma b 2 v v be( on ) base-emitter on voltage i c = 3a ; v ce = 3v 2.5 v v ecf c-e diode forward voltage i f = 3a 1.2 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 0.2 ma i cbo collector cutoff current v cb = v ceomax ;i e = 0 v cb = 1 / 2 v cbomax ;i e = 0;t j = 200 0.2 2 ma i ebo emitter cutoff current v eb = 5v; i c =0 5 ma h fe-1 dc current gain i c = 0.5a ; v ce = 3v 2500 h fe-2 dc current gain i c = 3a ; v ce = 3v 1000 h fe-3 dc current gain i c = 8a ; v ce = 3v 2600 c ob output capacitance i e = 0 ; v cb = 10v; f test = 1mhz 100 pf switching times t on turn-on time 0.5 s t off turn-off time i c = 3a; i b1 = -i b2 = 12ma 5 s isc website www.iscsemi.cn 2 |
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