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semitop ? 2 igbt module SK20GH123 preliminary data features

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("1 gh absolute maximum ratings # 3 0/ 4*
symbol conditions values units igbt 5 ,1 # 6 3 0/ 4 8099 5 $ # 6 3 80/ 4 # 3 0/ 4 0. : # 3 ;9 4 8/ : $ <= $ <= 3 0 $ .9 : 5 %,1 > 09 5
5 3 -99 5? 5 %, @ 09 5? 5 ,1 a 8099 5 # 6 3 80/ 4 89 b inverse diode $ c # 6 3 8/9 4 # 3 0/ 4 0d : # 3 ;9 4 8e : $ c<= $ c<= 3 0 $ c : $ c1= 3 89 ? 2 # 6 3 8/9 4 8;9 : module $ <=1 : # 26 !d9 +++ f8/9 4 # !d9 +++ f80/ 4 5 :* 8 + 0/99 5 characteristics # 3 0/ 4*
symbol conditions min. typ. max. units igbt 5 %, 5 %, 3 5 , * $ 3 9*- : d*/ /*/ -*/ 5 $ ,1 5 %, 3 9 5* 5 , 3 5 ,1 # 6 3 0/ 4 9*8 : # 6 3 80/ 4 : $ %,1 5 , 3 9 5* 5 %, 3 .9 5 # 6 3 0/ 4 d;9 : # 6 3 80/ 4 : 5 ,9 # 6 3 0/ 4 8*0 5 # 6 3 80/ 4 8*0 5 , 5 %, 3 8/ 5 # 6 3 0/4 ;- g # 6 3 80/4 80- g 5 , $ 3 8/ :* 5 %, 3 8/ 5 # 6 3 0/4
2+ 0 0*/ . 5 # 6 3 80/4
2+ .*8 .*e 5 8 c 5 , 3 0/* 5 %, 3 9 5 3 8 =) 9*8/ c 9*9e c h % 5 %, 39 +++ 09 5 i9 ./ < % 3 d9 g 5 3 -995 d/ , $ 3 8/: 0 j < % 3 d9 g # 6 3 80/ 4 0/9 5 %, 3>8/5 e9 , 8*; j < 6! $%# 8*d klm SK20GH123 1 30-10-2006 dil ? by semikron
semitop ? 2 igbt module SK20GH123 preliminary data features

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("1 gh characteristics symbol conditions min. typ. max. units inverse diode 5 c 3 5 , $ c 3 8/ :? 5 %, 3 9 5 # 6 3 0/ 4
2+ 0 0*/ 5 # 6 3 80/ 4
2+ 8*; 0*. 5 5 c9 # 6 3 80/ 4 8 8*0 5 c # 6 3 80/ 4 /. e. g $ <<= $ c 3 8/ : # 6 3 80/ 4 8- : h l 3 !099 :lb 0*e b , 5 3 -995 9*- j < 6! 8*e klm = n =8 0 08 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SK20GH123 2 30-10-2006 dil ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 6 typ. gate charge characteristic SK20GH123 3 30-10-2006 dil ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 10 cal diode forward characteristic SK20GH123 4 30-10-2006 dil ? by semikron
ul recognized file no. e 63 532 #/ 1 * "*
o 0 #/ % SK20GH123 5 30-10-2006 dil ? by semikron

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