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  c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 www. ruichips .com ru 6h9 p n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherw ise noted) v dss drain - source voltage 600 v gss gate - source voltage 30 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 9.5 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 38 a t c =25 c 9.5 i d continuous drain current t c =100 c 6.2 a t c =25 c 30 p d maximum power dissipation t c =100 c 12 w r q jc thermal resistance - junction to case 4.2 c /w drain - source avalanche ratings e as av alanche energy, single pulsed 10 m j ? 600 v/ 9.5 a, r ds ( on ) = 0.7 w (typ.) @ v gs =10v ? gate charge minimized ? low crss ( typ. 20 pf) ? extremely high dv/dt capability ? 100% avalanche tested ? lead free and green available ? high efficiency switch mode power supplies ? lighting absolute maximum ratings n - channel mosfe t to - 220f
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 2 www. ruichips .com ru 6h9 p electrical characteristics ( t c =25 c unless otherwise noted) ru 6h9 p symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sourc e breakdown voltage v gs =0v, i ds =250 m a 6 00 v v ds = 6 00 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 30 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 4.75 a 0. 7 0. 8 w notes : current limited by maximum junction temperature . limited by t jmax , i as = 4.5 a , v dd = 100 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to productio n testing . d iode characteristics v sd diode forward voltage i sd = 9.5 a, v gs =0v 1. 2 v t rr reverse recovery time 450 ns q rr reverse recovery charge i sd = 9.5 a, dl sd /dt=100a/ m s 4.2 m c dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 10 w c iss input capacitance 1 570 c oss output capacitance 190 c rss reverse transfer capacitance v gs =0v, v ds = 3 0 0 v, frequency=1.0mhz 20 pf t d ( on ) turn - on delay time 40 t r turn - on rise time 60 t d ( off ) turn - off delay time 180 t f turn - off fall time v dd = 3 0 0 v, r l = 32 w , i ds = 9.5 a, v gen = 10v, r g = 25 w 80 ns gate charge characteristics q g total gate charge 30 q gs gate - source charge 5 q gd g ate - drain charge v ds = 48 0 v, v gs = 10v, i ds = 9.5 a 14 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 3 www. ruichips .com ru 6h9 p typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 4 www. ruichips .com ru 6h9 p typical characteristics output characteristics dra in - source on resistance i d - drain current (a) r ds(on) - on resistance () v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance ( ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 5 www. ruichips .com ru 6h9 p typical characteristics drain - source on resistance source - drain diode forward normalized on resis tance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 6 www. ruichips .com ru 6h9 p avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 7 www. ruichips .com ru 6h9 p ordering and marking information device mark ing package packaging quantity reel size tape width ru 6h9 p ru 6h9 p to - 220f tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 8 www. ruichips .com ru 6h9 p package information to - 220f - 3l all dimensions refer to jedec standard do not include mold flash o r protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max e 9.96 1 0.16 10.36 0.392 0.400 0.408 ?p 3 - 3.450 - - 0.136 - a 4.50 4.70 4.90 0.177 0.185 0.193 1 5 7 9 5 7 9 a 1 2.34 2.54 2.74 0.092 0.100 0.108 2 - 45 - - 45 - a2 0.95 1.05 1.15 0.037 0.041 0.045 dep 0.05 0.10 0.15 0.002 0.004 0.006 a3 0.42 0.52 0.62 0.017 0.020 0.024 f1 1.90 2.00 2.10 0.075 0.079 0.083 a4 2.65 2.75 2.85 0.104 0.108 0 .112 f2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - f3 3.20 3.30 3.40 0.126 0.130 0.134 d 15.67 15.87 16.07 0.617 0.625 0.633 g 3.25 3.45 3.65 0.128 0.136 0.144 q 8.80 9.00 9.20 0.346 0.354 0.362 g1 5.90 6.00 6.10 0.232 0.236 0.240 h 1 6.48 6.68 6.88 0.255 0.263 0.271 g2 6.90 7.00 7.10 0.272 0.276 0.280 e 2.54bsc 0.1bsc b1 1.17 1.20 1.24 0.046 0.047 0.048 ?p - 3.183 - - 0.125 - b2 0.77 0.8 0.85 0.030 0.031 0.033 l 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 d1 8.99 9.19 9.39 0.354 0.362 0.370 e1 9.8 10.00 10.20 0.386 0.394 0.412 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 k1 0.75 0.8 0.85 0.030 0.031 0.033 ?p 2 1.15 1.20 1.25 0.045 0.047 0.049
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 9 www. ruichips .com ru 6h9 p customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com


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