m1 thru m7 1 amp silicon rectifier 50 to 1000 volts features for surface mount applications extremely low thermal resistance easy pick and place high temp soldering: 250 c for 10 seconds at terminals maximum ratings operating temperature: -65 c to +175 c storage temperature: -65 c to +175 c maximum thermal resistance; 15 c/w junction to lead device marking maximum reccurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage m1 50v 35v 50v m2 100v 70v 100v m3 200v 140v 200v m4 400v 280v 400v m5 600v 420v 600v m6 800v 560v 800v m7 1000v 700v 1000v electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 1.0a t j = 75 c peak forward surge current i fsm 50a 8.3ms, half sine, t j = 150 c maximum instantaneous forward voltage v f 1.1v i fm = 1.0a; t j = 25 c* maximum dc reverse current at rated dc blocking voltage i r 10 m a 50 m a t j = 25 c t j = 125 c maximum reverse recovery time t rr 1.8 m s i f =0.5a, i r =1.0a, i rr =0.25a typical junction capacitance c j 15pf measured at 1.0mhz, v r =4.0v *pulse test: pulse width 300 m sec, duty cycle 2% a b h d c e cat hode b and smae f g dimensions inches mm dim min max min max note a 0.177 3.99 4. 50 b 0.100 0.110 2.54 2.80 c 0.078 0.096 1.98 2.42 d 0.222 5.56 e f 0.008 0.203 g 0.006 0.012 0.152 0.305 0.157 0.194 4.93 h 0.055 0.071 1.40 1.80 0.030 0.060 0.76 1.52 1 www.htsemi.com semiconductor jinyu date:2011/05
junction capacitance - pf versus reverse junction potential (applied v + 0.7 volts) - volts figure 2 junction capacitance .1 .2 1 .4 2 10 20 404 100 200 1 2 6 10 20 100 pf volts 1 10 100 6 12 18 24 30 36 figure 3 maximum overload surge current -65 c to +175 c peak forward current - amperes versus number of cycles at 60hz amps cycles average forward rectified current - amperes versus ambient temperature - c figure 4 forward derating curve 0 20 40 60 80 100 120 140 160 180 0 .2 .4 .6 .8 1.0 1.2 1.4 resistive or inductive load amps c 200 60 40 4 400 1000 typical distribution median instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteristics 4 6 20 10 amps .4 .6 .8 1.0 1.2 1.4 .01 .02 .04 .06 .1 .2 .4 .6 1 2 25 c volts gs1a thru GS1M 2 www.htsemi.com semiconductor jinyu date:2011/05
figure 6 new smb assembly round lead process .01 1 10 10 20 40 100 200 60 figure 5 peak forward surge current peak forward surge current - amperes versus pulse duration - milliseconds (ms) amps ms .02 .06 .1 .2 .6 2 6 400 600 1000 gs1a thru GS1M 3 www.htsemi.com semiconductor jinyu date:2011/05
|
