2009. 6. 19 1/3 semiconductor technical data GM200HB12CT revision no : 0 tentative maximum rating (@ta=25 ? per leg) + _ + _ 14 0.2 + _ 18 0.2 + _ 14 0.2 + _ 18 0.2 + _ 14 0.2 + _ 18 0.2 30.45 0.2 + _ 15 0.2 + _ 27 0.2 + _ 6.5 0.2 + _ 31.6 0.2 + _ 62.5 0.2 outline drawing internal circuit c2e1 e2 g2 e2 c1 e1 g1 unit : mm 93 0.2 m6 + _ 108.5 0.2 + _ 108.5 0.2 + _ 28 0.2 + _ 28 0.2 + _ + _ 1.3 0.2 g2 e2 e1 g1 1200v/200a 2 in one package features h igbt new technology h low v ce(sat) h low turn-off losses h short tail current h positive temperature coefficient application h ac & dc motor controls h general purpose inverters h optimized for high current inverter h servo controls h ups, robotics characteristic symbol rating unit collector-to-emitter voltage @t c =25 ? v ces 1200 v gate-emitter voltage v ges ? 20 v continuous collector current @t c =25 ? i c 260 a @t c =80 ? 200 pulsed collector current @t c =25 ? i cp 400 a diode continuous forward current @t c =25 ? i f 260 a @t c =80 ? 200 diode maximum forward current @t c =25 ? i fm 400 a short circuit test @t c =25 ? t p 10 k @t c =125 ? 8 isolation voltage test ac @ 1 minute v iso 2500 v junction temperature t j -40 ~ 150 ? storage temperature t stg -40 ~ 125 ? weight of module weight 360 g mounting torque with screw : m6 m d 4.0 n.m terminal connection torque : m6 4.0 n.m
2009. 6. 19 2/3 GM200HB12CT revision no : 0 electrical characteristics (igbt/diode) (@ta=25 ? unless otherwise specified) thermal characteristic static characteristics (@tj=25 ? unless otherwise specified) characteristic symbol test condition min. typ. max. unit collector-to-emitter saturation volatge v ce(on) i c =200a, v ge =15v 1.4 1.7 2.1 v gate threshold voltage v ge(th) i c =8ma, v ce =v ge 5.0 5.8 6.5 zero gate voltage collector current i ces v ge =0v, v ce =1200v - - 5.0 ma gate-to-emitter leakage volatge i ges v ce =0v, v ce =20v - - 400 na diode forward voltage drop v fm i f =200a, v ge =0v 1.2 1.6 1.9 v integrated gate resistor r gint - 3.8 - ? characteristic symbol test condition min. typ. max. unit igbt input capacitance c ies v ce =25v, v ge =0v, f=1mhz - 14420 - nf ouput capacitance c oes - 760 - reverse transfer capacitance c res - 660 - turn-on delay time t d(on) inductive switching 125 ? v cc =600v, i c =200a, v ge = ? 15v,r g =3.9 ? - 290 - ns rise time t r -50- turn-off delay time t d(off) - 520 - fall time t r -90- diode maximum peak repetitive reverse voltage v rrm 1200 - - v maximum reverse ieakage current i rm v r =1200v - - 350 u reverse recovery time t rr i f =200a, v r =600v, di/dt=2500a/ k - 170 - ns reverse recovery charge q rr -18- c characteristic symbol min typ max. unit junction to case (igbt part, per 1/2 module) r th(j-c) - - 0.09 ? /w junction to case (didoe part, per 1/2 module) r th(j-c) - - 0.17 case to heat sink (conductive grease applied) r th(j-s) - 0.03 - ? data and specifications subject to change without notice.
2009. 6. 19 3/3 GM200HB12CT revision no : 0 fig 2. typ. igbt out characteristics fig 1. typ. igbt output characteristics igbt fig 4. reverse bias operating area igbt fig 3. typ. transfer characteristics igbt fig 5. forward characteristics of diode igbt i c (a) 0 400 300 200 100 01234 v ce (v) i c (a) v ge (v) i c (a) v ce (v) v ce (v) i c (a) c v ge =15v, r g =2.7 ? , t j =125 i c (a) v f (v) t j =125 c 0 200 150 250 100 50 300 350 400 450 0 300 600 900 1200 1500 0 400 350 300 250 200 150 100 50 0 400 350 300 250 200 150 100 50 5678 11 910 12 0 0.4 0.8 1.2 2.4 1.6 2.0 0 400 300 200 100 01234 v ge =17v v ge =15v v ge =13v v ge =9v t j =25 c t j =125 c t j =25 c t j =125 c t j =25 c t j =125 c
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